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參數資料
| 型號： | IRF830 |
| 廠商： | ON SEMICONDUCTOR |
| 元件分類： | 功率晶體管 |
| 英文描述： | TMOS Power FET N-Channel Enhancement Mode(TMOS N-溝道增強型功率場效應管) |
| 中文描述： | 4.5 A, 500 V, 1.5 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-220AB |
| 封裝： | CASE 221A-09, 3 PIN |
| 文件頁數： | 1/4頁 |
| 文件大小： | 62K |
| 代理商： | IRF830 |
Semiconductor Components Industries, LLC, 2000
April, 2000 – Rev. 0
1
Publication Order Number:
IRF830/D
N–Channel Enhancement Mode
Silicon Gate TMOS
This TMOS Power FET is designed for high voltage, high speed
power switching applications such as switching regulators, converters,
solenoid and relay drivers.
Silicon Gate for Fast Switching Speeds
Low R
DS(on)
to Minimize On–Losses, Specified at Elevated
Temperature
Rugged — SOA is Power Dissipation Limited
Source–to–Drain Diode Characterized for Use with Inductive Loads
MAXIMUM RATINGS
Rating
Symbol
Value
Unit
Drain–Source Voltage
V
DSS
500
Vdc
Drain–Gate Voltage (R
GS
= 1.0 M
)
V
DGR
500
Vdc
Gate–Source Voltage
V
GS
20
Vdc
Drain Current
Continuous, T
C
= 25
°
C
Continuous,
T
C
= 100
°
C
Peak, T
C
= 25
°
C
I
D
4.5
3.0
18
Adc
Total Power Dissipation @ T
C
= 25
°
C
Derate above 25
°
C
P
D
75
0.6
Watts
W/
°
C
Operating and Storage
Temperature Range
T
J
, T
stg
–55 to 150
°
C
THERMAL CHARACTERISTICS
Thermal Resistance
— Junction–to–Case
— Junction–to–Ambient
R
θ
JC
R
θ
JA
1.67
62.5
°
C/W
Maximum Lead Temperature for
Soldering Purposes, 1/8
″
from Case
for 5 Seconds
T
L
300
°
C
See the MTM4N45 Data Sheet for a complete set of design curves for the
product on this data sheet. Design curves of the MTP4N45 are applicable for
this product.
TMOS POWER FET
4.5 AMPERES
500 VOLTS
R
DS(on)
= 1.5
Device
Package
Shipping
ORDERING INFORMATION
IRF830
TO–220AB
50 Units/Rail
TO–220AB
CASE 221A
STYLE 5
123
4
PIN ASSIGNMENT
1
2
3
Source
Gate
Drain
4
Drain
http://onsemi.com
N–Channel
D
S
G
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相關代理商/技術參數 |
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|---|---|
| IRF830 | 制造商:STMicroelectronics 功能描述:MOSFET N TO-220 |
| IRF830/D | 制造商:未知廠家 制造商全稱:未知廠家 功能描述:Power Field Effect Transistor |
| IRF830_R4943 | 功能描述:MOSFET TO-220AB N-Ch Power RoHS:否 制造商:STMicroelectronics 晶體管極性:N-Channel 汲極/源極擊穿電壓:650 V 閘/源擊穿電壓:25 V 漏極連續電流:130 A 電阻汲極/源極 RDS（導通）:0.014 Ohms 配置:Single 最大工作溫度: 安裝風格:Through Hole 封裝 / 箱體:Max247 封裝:Tube |
| IRF8301MTRPBF | 制造商:International Rectifier 功能描述:30V DIRECTFET POWER MOSFET - Tape and Reel 制造商:International Rectifier 功能描述:MOSF N CH 30V 34A DIRECTFET MT 制造商:International Rectifier 功能描述:N-Ch 30V 1.3mOhm Ultra-Low RDSon |
| IRF8302MTR1PBF | 功能描述:MOSFET 30V N-Channel HEXFET Power MOSFET RoHS:否 制造商:STMicroelectronics 晶體管極性:N-Channel 汲極/源極擊穿電壓:650 V 閘/源擊穿電壓:25 V 漏極連續電流:130 A 電阻汲極/源極 RDS（導通）:0.014 Ohms 配置:Single 最大工作溫度: 安裝風格:Through Hole 封裝 / 箱體:Max247 封裝:Tube |
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