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參數資料
| 型號： | IRF8910 |
| 廠商： | International Rectifier |
| 英文描述： | HEXFET Power MOSFET |
| 中文描述： | HEXFET功率MOSFET |
| 文件頁數： | 1/10頁 |
| 文件大小： | 274K |
| 代理商： | IRF8910 |
www.irf.com
1
4/28/04
IRF8910
HEXFET Power MOSFET
R
DS(on)
max
13.4m @V
GS
= 10V
Notes
through are on page 10
SO-8
Benefits
Very Low R
DS(on)
at 4.5V V
GS
Ultra-Low Gate Impedance
Fully Characterized Avalanche Voltage
and Current
20V V
GS
Max. Gate Rating
Absolute Maximum Ratings
Parameter
Units
V
V
DS
V
GS
I
D
@ T
A
= 25°C
I
D
@ T
A
= 70°C
I
DM
P
D
@T
A
= 25°C
P
D
@T
A
= 70°C
Drain-to-Source Voltage
Gate-to-Source Voltage
Continuous Drain Current, V
GS
@ 10V
Continuous Drain Current, V
GS
@ 10V
Pulsed Drain Current
A
Power Dissipation
Power Dissipation
W
Linear Derating Factor
Operating Junction and
Storage Temperature Range
W/°C
°C
T
J
T
STG
Thermal Resistance
Parameter
Typ.
–––
–––
Max.
20
62.5
Units
°C/W
R
θ
JL
R
θ
JA
Junction-to-Drain Lead
Junction-to-Ambient
Max.
20
10
8.3
82
2.0
1.3
± 20
-55 to + 150
0.016
D1
D1
D2
D2
G1
S2
G2
S1
Top View
8
1
2
3
4
5
6
7
Applications
Dual SO-8 MOSFET for POL
converters in desktop, servers,
graphics cards, game consoles
and set-top box
V
DSS
20V
I
D
10A
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PDF描述 |
|---|---|
| IRF8915 | HEXFETPower MOSFET |
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| IRF9510 | 3.0A, 100V, 1.200 Ohm, P-Channel Power MOSFET(3.0A, 100V, 1.200 Ω,P溝道功率MOS場效應管) |
| IRF9520 | 6A, 100V, 0.600 Ohm, P-Channel Power MOSFET(6A, 100V, 0.600 Ω, P溝道功率MOS場效應管) |
| IRF9530 | 12A, 100V, 0.300 Ohm, P-Channel Power MOSFETs(12A, 100V, 0.300 Ohm,P溝道功率MOS場效應管) |
相關代理商/技術參數 |
參數描述 |
|---|---|
| IRF8910GPBF | 功能描述:MOSFET 20V DUAL N-CH HEXFET 13.4mOhms 7.4nC RoHS:否 制造商:STMicroelectronics 晶體管極性:N-Channel 汲極/源極擊穿電壓:650 V 閘/源擊穿電壓:25 V 漏極連續電流:130 A 電阻汲極/源極 RDS（導通）:0.014 Ohms 配置:Single 最大工作溫度: 安裝風格:Through Hole 封裝 / 箱體:Max247 封裝:Tube |
| IRF8910GTRPBF | 功能描述:MOSFET MOSFT DUAL NCh 20V 10A RoHS:否 制造商:STMicroelectronics 晶體管極性:N-Channel 汲極/源極擊穿電壓:650 V 閘/源擊穿電壓:25 V 漏極連續電流:130 A 電阻汲極/源極 RDS（導通）:0.014 Ohms 配置:Single 最大工作溫度: 安裝風格:Through Hole 封裝 / 箱體:Max247 封裝:Tube |
| IRF8910PBF | 功能描述:MOSFET 20V DUAL N-CH HEXFET 50mOhms 13.3nC RoHS:否 制造商:STMicroelectronics 晶體管極性:N-Channel 汲極/源極擊穿電壓:650 V 閘/源擊穿電壓:25 V 漏極連續電流:130 A 電阻汲極/源極 RDS（導通）:0.014 Ohms 配置:Single 最大工作溫度: 安裝風格:Through Hole 封裝 / 箱體:Max247 封裝:Tube |
| IRF8910PBF_08 | 制造商:IRF 制造商全稱:International Rectifier 功能描述:Dual SO-8 MOSFET for POL converters in desktop, servers, graphics cards, game consoles and set-top box |
| IRF8910TRHR | 制造商:International Rectifier 功能描述:TRANS MOSFET N-CH 20V 10A 8SOIC - Tape and Reel |
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