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參數資料
型號: IRF840B
廠商: FAIRCHILD SEMICONDUCTOR CORP
元件分類: JFETs
英文描述: 500V N-Channel MOSFET
中文描述: 8 A, 500 V, 0.8 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-220AB
封裝: TO-220, 3 PIN
文件頁數: 5/7頁
文件大?。?/td> 60K
代理商: IRF840B
Philips Semiconductors
Product specification
PowerMOS transistor
Avalanche energy rated
IRF840
Fig.13. Typical turn-on gate-charge characteristics.
V
GS
= f(Q
G
); parameter V
DS
Fig.14. Typical switching times t
d(on)
, t
r
, t
d(off)
, t
f
= f(R
G
)
Fig.15. Normalised drain-source breakdown voltage
V
(BR)DSS
/V
(BR)DSS 25 C
= f(T
j
)
Fig.16. Source-Drain diode characteristic.
I
F
= f(V
SDS
); parameter T
j
Fig.17. Maximum permissible non-repetitive
avalanche current (I
) versus avalanche time (t
p
);
unclamped inductive load
Fig.18. Maximum permissible repetitive avalanche
current (I
AR
) versus avalanche time (t
p
)
PHP8N50E
0
1
2
3
4
5
6
7
8
9
10
12
14
0
20
40
60
80
Gate charge, QG (nC)
Gate-source voltage, VGS (V)
ID = 8.5A
Tj = 25 C
VDD = 400 V
100V
200V
0
0.2
0.4
0.6
0.8
1
1.2
1.4
0
5
10
15
20
PHP8N50
VSDS, Source-Drain voltage (Volts)
IF, Source-Drain diode current (Amps)
VGS = 0 V
Tj = 25 C
150 C
0
10
20
30
40
50
60
10
100
1000
td(on)
PHP8N50
RG, Gate resistance (Ohms)
Switching times (ns)
VDD = 250 V
Tj = 25 C
RD = 30 Ohms
VGS = 10 V
tf
tr
td(off)
PHP8N50E
0.1
1
10
1E-06
1E-05
1E-04
1E-03
1E-02
Avalanche time, tp (s)
Non-repetitive Avalanche current, IAS (A)
25 C
VDS
ID
tp
Tj prior to avalanche = 125 C
-100
-50
0
50
100
150
0.85
0.9
0.95
1
1.05
1.1
1.15
Tj, Junction temperature (C)
Normalised Drain-source breakdown voltage
V(BR)DSS @ Tj
V(BR)DSS @ 25 C
PHP8N50E
0.01
0.1
1
10
1E-06
1E-05
1E-04
1E-03
1E-02
Avalanche time, tp (s)
Maximum Repetitive Avalanche Current, IAR (A)
125 C
Tj prior to avalanche = 25 C
March 1999
5
Rev 1.000
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相關代理商/技術參數
參數描述
IRF840B_05 制造商:FAIRCHILD 制造商全稱:Fairchild Semiconductor 功能描述:500V N-Channel MOSFET
IRF840BPBF 功能描述:MOSFET 500V 850mOhm@10V 8.7A N-Ch D-SRS RoHS:否 制造商:STMicroelectronics 晶體管極性:N-Channel 汲極/源極擊穿電壓:650 V 閘/源擊穿電壓:25 V 漏極連續電流:130 A 電阻汲極/源極 RDS(導通):0.014 Ohms 配置:Single 最大工作溫度: 安裝風格:Through Hole 封裝 / 箱體:Max247 封裝:Tube
IRF840F 制造商:未知廠家 制造商全稱:未知廠家 功能描述:N - CHANNEL ENHANCEMENT MODE POWER MOS TRANSISTORS(188.09 k)
IRF840FI 制造商:STMicroelectronics 功能描述:MOSFET Transistor, N-Channel, TO-220VAR
IRF840FP 制造商:SUNTAC 制造商全稱:SUNTAC 功能描述:POWER MOSFET
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