欧美成人免费电影,国产欧美一区二区三区精品酒店,精品国产a毛片,色网在线免费观看

參數資料
型號: IRF840PBF
廠商: International Rectifier
英文描述: HEXFET POWER MOSFET
中文描述: HEXFET功率MOSFET
文件頁數: 1/7頁
文件大小: 60K
代理商: IRF840PBF
Philips Semiconductors
Product specification
PowerMOS transistor
Avalanche energy rated
IRF840
FEATURES
SYMBOL
QUICK REFERENCE DATA
Repetitive Avalanche Rated
Fast switching
High thermal cycling performance
Low thermal resistance
V
DSS
= 500 V
I
D
= 8.5 A
R
DS(ON)
0.85
GENERAL DESCRIPTION
PINNING
SOT78 (TO220AB)
N-channel,
field-effect
intendedfor use in off-lineswitched
mode power supplies, T.V. and
computer monitor power supplies,
d.c.tod.c.converters,motorcontrol
circuits
and
general
switching applications.
enhancement
power
mode
PIN
DESCRIPTION
transistor,
1
gate
2
drain
purpose
3
source
tab
drain
The IRF840 is supplied in the
SOT78 (TO220AB) conventional
leaded package.
LIMITING VALUES
Limiting values in accordance with the Absolute Maximum System (IEC 134)
SYMBOL PARAMETER
V
DSS
Drain-source voltage
V
DGR
Drain-gate voltage
V
GS
Gate-source voltage
I
D
Continuous drain current
CONDITIONS
T
j
= 25 C to 150C
T
j
= 25 C to 150C; R
GS
= 20 k
MIN.
-
-
-
-
-
-
-
- 55
MAX.
500
500
±
30
8.5
5.4
34
147
150
UNIT
V
V
V
A
A
A
W
C
T
mb
= 25 C; V
GS
= 10 V
T
mb
= 100 C; V
GS
= 10 V
T
mb
= 25 C
T
mb
= 25 C
I
DM
P
D
T
j
, T
stg
Pulsed drain current
Total dissipation
Operating junction and
storage temperature range
AVALANCHE ENERGY LIMITING VALUES
Limiting values in accordance with the Absolute Maximum System (IEC 134)
SYMBOL PARAMETER
E
AS
Non-repetitive avalanche
energy
CONDITIONS
Unclamped inductive load, I
= 7.4 A;
t
p
= 0.22 ms; T
j
prior to avalanche = 25C;
V
50 V; R
GS
= 50
; V
GS
= 10 V; refer
to fig:17
MIN.
-
MAX.
531
UNIT
mJ
E
AR
Repetitive avalanche energy
1
I
= 8.5 A; t
= 2.5
μ
s; T
prior to
avalanche = 25C; R
GS
= 50
; V
GS
= 10 V;
refer to fig:18
Repetitive and non-repetitive
avalanche current
-
13
mJ
I
AS
, I
AR
-
8.5
A
d
g
s
1 2 3
tab
1
pulse width and repetition rate limited by T
j
max.
March 1999
1
Rev 1.000
相關PDF資料
PDF描述
IRF840AL Power MOSFET(Vdss=500V, Rds(on)max=0.85ohm, Id=8.0A)
IRF840AS Power MOSFET(Vdss=500V, Rds(on)max=0.85ohm, Id=8.0A)
IRF840 Power MOSFET(Vdss=500V, Rds(on)=0.85ohm, Id=8.0A)
IRF8401111 TRANSISTORS N-CHANNEL
IRF840LCL Power MOSFET(Vdss=500V, Rds(on)=0.85ohm, Id=8.0A)
相關代理商/技術參數
參數描述
IRF840R 制造商:未知廠家 制造商全稱:未知廠家 功能描述:TRANSISTOR | MOSFET | N-CHANNEL | 500V V(BR)DSS | 8A I(D) | TO-220AB
IRF840RU 制造商:Rochester Electronics LLC 功能描述:- Bulk
IRF840S 功能描述:MOSFET N-Chan 500V 8.0 Amp RoHS:否 制造商:STMicroelectronics 晶體管極性:N-Channel 汲極/源極擊穿電壓:650 V 閘/源擊穿電壓:25 V 漏極連續電流:130 A 電阻汲極/源極 RDS(導通):0.014 Ohms 配置:Single 最大工作溫度: 安裝風格:Through Hole 封裝 / 箱體:Max247 封裝:Tube
IRF840SPBF 功能描述:MOSFET N-Chan 500V 8.0 Amp RoHS:否 制造商:STMicroelectronics 晶體管極性:N-Channel 汲極/源極擊穿電壓:650 V 閘/源擊穿電壓:25 V 漏極連續電流:130 A 電阻汲極/源極 RDS(導通):0.014 Ohms 配置:Single 最大工作溫度: 安裝風格:Through Hole 封裝 / 箱體:Max247 封裝:Tube
IRF840ST 制造商:International Rectifier 功能描述:MOSFET Transistor, N-Channel, TO-263AB
主站蜘蛛池模板: 太谷县| 龙泉市| 河池市| 弥勒县| 方山县| 祁门县| 依兰县| 酉阳| 道真| 夏邑县| 石首市| 祁门县| 华池县| 剑河县| 厦门市| 察哈| 连江县| 永胜县| 集安市| 巫溪县| 宁晋县| 庄河市| 台山市| 东阿县| 璧山县| 古交市| 荣成市| 盐津县| 板桥市| 麻阳| 福海县| 彩票| 伊宁市| 徐州市| 邹城市| 平山县| 永仁县| 万宁市| 甘南县| 康马县| 万年县|