- 您現(xiàn)在的位置：買(mǎi)賣(mài)IC網(wǎng) > PDF目錄360933 > IRF840PBF (International Rectifier) HEXFET POWER MOSFET PDF資料下載
參數(shù)資料
| 型號(hào)： | IRF840PBF |
| 廠商： | International Rectifier |
| 英文描述： | HEXFET POWER MOSFET |
| 中文描述： | HEXFET功率MOSFET |
| 文件頁(yè)數(shù)： | 3/7頁(yè) |
| 文件大小： | 60K |
| 代理商： | IRF840PBF |
Philips Semiconductors
Product specification
PowerMOS transistor
Avalanche energy rated
IRF840
Fig.1. Normalised power dissipation.
PD% = 100
P
D
/P
D 25 C
= f(T
mb
)
Fig.2. Normalised continuous drain current.
ID% = 100
I
D
/I
D 25 C
= f(T
mb
); conditions: V
GS
≥
10 V
Fig.3. Safe operating area. T
= 25 C
I
D
& I
DM
= f(V
DS
); I
DM
single pulse; parameter t
p
Fig.4. Transient thermal impedance.
Z
th j-mb
= f(t); parameter D = t
p
/T
Fig.5. Typical output characteristics
I
D
= f(V
DS
); parameter V
GS
Fig.6. Typical on-state resistance
R
DS(ON)
= f(I
D
); parameter V
GS
0
20
40
60
80
100
120
140
Tmb / C
PD%
Normalised Power Derating
120
110
100
90
80
70
60
50
40
30
20
10
0
1ms
1s
0.001
0.01
0.1
1
PHP6N60
Zth j-mb, Transient thermal impedance (K/W)
1us
10us
100us
tp, pulse width (s)
10ms
100ms
D =
t
p
t
p
T
T
P
t
D
D = 0.5
0.2
0.05
0.02
single pulse
0.1
0
20
40
60
80
100
120
140
Tmb / C
ID%
Normalised Current Derating
120
110
100
90
80
70
60
50
40
30
20
10
0
0
5
10
15
20
25
30
0
5
10
15
20
25
30
5.5 V
6 V
6.5 V
7 V
10 V
PHP8N50
VDS, Drain-Source voltage (Volts)
ID, Drain current (Amps)
Tj = 25 C
5 V
VGS = 4.5 V
1
10
100
1000
VDS / V
ID / A
100
10
1
0.1
BUK457-500B
tp = 10 us
100 us
1 ms
10 ms
100 ms
DC
RDSON =VDSID
0
5
10
15
20
25
0
0.5
1
1.5
2
PHP8N50
Tj = 25 C
5 V
5.5 V
10 V
ID, Drain current (Amps)
RDS(on), Drain-Source on resistance (Ohms)
4.5 V
VGS = 6 V
6.5 V
7 V
March 1999
3
Rev 1.000
相關(guān)PDF資料 |
PDF描述 |
|---|---|
| IRF840AL | Power MOSFET(Vdss=500V, Rds(on)max=0.85ohm, Id=8.0A) |
| IRF840AS | Power MOSFET(Vdss=500V, Rds(on)max=0.85ohm, Id=8.0A) |
| IRF840 | Power MOSFET(Vdss=500V, Rds(on)=0.85ohm, Id=8.0A) |
| IRF8401111 | TRANSISTORS N-CHANNEL |
| IRF840LCL | Power MOSFET(Vdss=500V, Rds(on)=0.85ohm, Id=8.0A) |
相關(guān)代理商/技術(shù)參數(shù) |
參數(shù)描述 |
|---|---|
| IRF840R | 制造商:未知廠家 制造商全稱(chēng):未知廠家 功能描述:TRANSISTOR | MOSFET | N-CHANNEL | 500V V(BR)DSS | 8A I(D) | TO-220AB |
| IRF840RU | 制造商:Rochester Electronics LLC 功能描述:- Bulk |
| IRF840S | 功能描述:MOSFET N-Chan 500V 8.0 Amp RoHS:否 制造商:STMicroelectronics 晶體管極性:N-Channel 汲極/源極擊穿電壓:650 V 閘/源擊穿電壓:25 V 漏極連續(xù)電流:130 A 電阻汲極/源極 RDS（導(dǎo)通）:0.014 Ohms 配置:Single 最大工作溫度: 安裝風(fēng)格:Through Hole 封裝 / 箱體:Max247 封裝:Tube |
| IRF840SPBF | 功能描述:MOSFET N-Chan 500V 8.0 Amp RoHS:否 制造商:STMicroelectronics 晶體管極性:N-Channel 汲極/源極擊穿電壓:650 V 閘/源擊穿電壓:25 V 漏極連續(xù)電流:130 A 電阻汲極/源極 RDS（導(dǎo)通）:0.014 Ohms 配置:Single 最大工作溫度: 安裝風(fēng)格:Through Hole 封裝 / 箱體:Max247 封裝:Tube |
| IRF840ST | 制造商:International Rectifier 功能描述:MOSFET Transistor, N-Channel, TO-263AB |
發(fā)布緊急采購(gòu)，3分鐘左右您將得到回復(fù)。