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參數資料
| 型號： | IRF843FI |
| 英文描述： | TRANSISTOR | MOSFET | N-CHANNEL | 450V V(BR)DSS | 4A I(D) | TO-220AB |
| 中文描述： | 晶體管| MOSFET的| N溝道| 450V五（巴西）直| 4A條（丁）| TO - 220AB現有 |
| 文件頁數： | 1/10頁 |
| 文件大小： | 129K |
| 代理商： | IRF843FI |
www.irf.com
1
12/16/99
SMPS MOSFET
HEXFET
Power MOSFET
l
Switch Mode Power Supply (SMPS)
l
Uninterruptible Power Supply
l
High Speed Power Switching
Benefits
l
Low Gate Charge Qg Results in Simple
Drive Requirement
l
Improved Gate, Avalanche and Dynamic
dv/dt Ruggedness
l
Fully Characterized Capacitance and
Avalanche Voltage and Current
l
Effective Coss Specified (See AN 1001)
Applications
V
DSS
500V
R
DS(on)
max
0.85
I
D
8.0A
Parameter
Max.
8.0
5.1
32
125
3.1
1.0
± 30
5.0
Units
I
D
@ T
C
= 25°C
I
D
@ T
C
= 100°C
I
DM
P
D
@T
C
= 25°C
P
D
@T
A
= 25°C
Continuous Drain Current, V
GS
@ 10V
Continuous Drain Current, V
GS
@ 10V
Pulsed Drain Current
Power Dissipation
Power Dissipation
Linear Derating Factor
Gate-to-Source Voltage
Peak Diode Recovery dv/dt
Operating Junction and
Storage Temperature Range
Soldering Temperature, for 10 seconds
A
W
W/°C
V
V/ns
V
GS
dv/dt
T
J
T
STG
-55 to + 150
300 (1.6mm from case )
°C
Absolute Maximum Ratings
Notes
through
are on page 10
Typical SMPS Topologies
l
Two Transistor Forward
l
Haft Bridge
l
Full Bridge
IRF840AS
IRF840AL
D
2
Pak
IRF840AS
TO-262
IRF840AL
PD- 91901B
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| IRF840 | N-CHANNEL POWER MOSFETS |
| IRF840 | 8A, 500V, 0.850 Ohm, N-Channel Power MOSFET |
| IRF840PBF | HEXFET POWER MOSFET |
相關代理商/技術參數 |
參數描述 |
|---|---|
| IRF843R | 制造商:未知廠家 制造商全稱:未知廠家 功能描述:TRANSISTOR | MOSFET | N-CHANNEL | 450V V(BR)DSS | 7A I(D) | TO-220AB |
| IRF8513PBF | 功能描述:MOSFET 30V DUAL N-CH HEXFET 15.5mOhms 6nC RoHS:否 制造商:STMicroelectronics 晶體管極性:N-Channel 汲極/源極擊穿電壓:650 V 閘/源擊穿電壓:25 V 漏極連續電流:130 A 電阻汲極/源極 RDS（導通）:0.014 Ohms 配置:Single 最大工作溫度: 安裝風格:Through Hole 封裝 / 箱體:Max247 封裝:Tube |
| IRF8513TRPBF | 功能描述:MOSFET MOSFT DUAL NCh 30V 11A RoHS:否 制造商:STMicroelectronics 晶體管極性:N-Channel 汲極/源極擊穿電壓:650 V 閘/源擊穿電壓:25 V 漏極連續電流:130 A 電阻汲極/源極 RDS（導通）:0.014 Ohms 配置:Single 最大工作溫度: 安裝風格:Through Hole 封裝 / 箱體:Max247 封裝:Tube |
| IRF8707GPBF | 功能描述:MOSFET HEXFET 30V VDSS 11.9mOhm 10V 6.2nC RoHS:否 制造商:STMicroelectronics 晶體管極性:N-Channel 汲極/源極擊穿電壓:650 V 閘/源擊穿電壓:25 V 漏極連續電流:130 A 電阻汲極/源極 RDS（導通）:0.014 Ohms 配置:Single 最大工作溫度: 安裝風格:Through Hole 封裝 / 箱體:Max247 封裝:Tube |
| IRF8707GTRPBF | 功能描述:MOSFET MOSFT 30V 11A 11.9mOhm 6.2nC RoHS:否 制造商:STMicroelectronics 晶體管極性:N-Channel 汲極/源極擊穿電壓:650 V 閘/源擊穿電壓:25 V 漏極連續電流:130 A 電阻汲極/源極 RDS（導通）:0.014 Ohms 配置:Single 最大工作溫度: 安裝風格:Through Hole 封裝 / 箱體:Max247 封裝:Tube |
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