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參數資料
| 型號： | IRF9140 |
| 廠商： | International Rectifier |
| 英文描述： | -100V,Thru-Hole Radiation Hardened Power MOSFET(-100V,通孔安裝抗輻射功率P溝道MOSFET) |
| 中文描述： | - 100V的，通孔抗輻射功率MOSFET（- 100V的，通孔安裝抗輻射功率P溝道MOSFET的） |
| 文件頁數： | 1/7頁 |
| 文件大小： | 160K |
| 代理商： | IRF9140 |
Absolute Maximum Ratings
Parameter
Continuous Drain Current
Continuous Drain Current
Pulsed Drain Current
Max. Power Dissipation
Linear Derating Factor
Gate-to-Source Voltage
Single Pulse Avalanche Energy
Avalanche Current
Repetitive Avalanche Energy
Peak Diode Recovery dv/dt
Operating Junction
Storage Temperature Range
Lead Temperature
Weight
Units
ID @ VGS = 0V, TC = 25°C
ID @ VGS = 0V, TC = 100°C
IDM
PD @ TC = 25°C
-18
-11
-72
125
1.0
±20
500
-18
12.5
-5.5
W
W/°C
V
mJ
A
mJ
V/ns
VGS
EAS
IAR
EAR
dv/dt
TJ
TSTG
-55 to 150
300 (0.063 in. (1.6mm) from case for 10s)
11.5(typical)
g
PD - 93976
The HEXFET
technology is the key to International
Rectifier’s advanced line of power MOSFET transistors.
The efficient geometry and unique processing of this latest
“State of the Art” design achieves: very low on-state resis-
tance combined with high transconductance; superior re-
verse energy and diode recovery dv/dt capability.
The HEXFET transistors also feature all of the well estab-
lished advantages of MOSFETs such as voltage control,
very fast switching, ease of parelleling and temperature
stability of the electrical parameters.
They are well suited for applications such as switching
power supplies, motor controls, inverters, choppers, audio
amplifiers and high energy pulse circuits.
o
C
A
REPETITIVE AVALANCHE AND dv/dt RATED
HEXFET
THRU-HOLE (TO-204AA/AE)
IRF9140
TRANSISTORS
100V, P-CHANNEL
9/11/00
www.irf.com
1
TO-3
Product Summary
Part Number BVDSS R
DS(on)
IRF9140 -100V 0.2
-18A
I
D
Features:
n
Repetitive Avalanche Ratings
n
Dynamic dv/dt Rating
n
Hermetically Sealed
n
Simple Drive Requirements
n
Ease of Paralleling
For footnotes refer to the last page
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|---|---|
| IRF9540S | HEXFET Power MOSFET |
| IRF9Z34L | Power MOSFET(Vdss=-60V, Rds(on)=0.14ohm, Id=-18A) |
| IRF9Z34S | Power MOSFET(Vdss=-60V, Rds(on)=0.14ohm, Id=-18A) |
| IRF9Z34NL | Power MOSFET(Vdss=-55V, Rds(on)=0.10ohm, Id=-19A) |
| IRF9Z34NS | Power MOSFET(Vdss=-55V, Rds(on)=0.10ohm, Id=-19A) |
相關代理商/技術參數 |
參數描述 |
|---|---|
| IRF9140SM | 制造商:未知廠家 制造商全稱:未知廠家 功能描述:TRANSISTOR | MOSFET | P-CHANNEL | 100V V(BR)DSS | 14A I(D) | LLCC |
| IRF9141 | 制造商:SAMSUNG 制造商全稱:Samsung semiconductor 功能描述:P-CHANNEL POWER MOSFETS |
| IRF9142 | 制造商:SAMSUNG 制造商全稱:Samsung semiconductor 功能描述:P-CHANNEL POWER MOSFETS |
| IRF9143 | 制造商:International Rectifier 功能描述: |
| IRF9150 | 制造商:Microsemi Corporation 功能描述:TRANS MOSFET P-CH 100V 25A 3PIN TO-3 - Bulk |
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