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參數資料
| 型號： | IRF9240 |
| 廠商： | HARRIS SEMICONDUCTOR |
| 元件分類： | 功率晶體管 |
| 英文描述： | CAP CER 250VAC 100PF X7R 1808 |
| 中文描述： | 11 A, 200 V, 0.5 ohm, P-CHANNEL, Si, POWER, MOSFET, TO-204AA |
| 文件頁數： | 2/2頁 |
| 文件大?。?/td> | 25K |
| 代理商： | IRF9240 |
IRF9240
IRF9240
–
SMD
Semelab plc.
Telephone +44(0)1455 556565. Fax +44(0)1455 552612.
E-mail:
sales@semelab.co.uk
http://www.semelab.co.ukCharacteristic
Drain
–
Source Breakdown Voltage
Gate Threshold Voltage
Gate
–
Source Leakage Current (forward)
Gate
–
Source Leakage Current (reverse)
Test Conditions
V
GS
= 0V , I
D
=
–
250
m
A
V
DS
= V
GS
, I
D
=
–
250
m
A
V
GS
=
–
20V
V
GS
= 20V
V
DS
= Max. Rating , V
GS
= 0V
V
DS
= 0.8 x Max. Rating
V
GS
= 0V , T
case
= 125
°
C
V
DS
> I
D(ON)
x R
DS(ON)
Max
V
GS
=
–
10V
V
GS
=
–
10V , I
D
=
–
6A
V
DS
> I
D(ON)
x R
DS(ON)
Max
I
D
=
–
6A
V
GS
= 0V
V
DS
=
–
25V
f = 1MHz
V
GS
=
–
15V
I
D
=
–
22A
V
DS
= 0.8 x Max. Rating
Min.
–
200
–
2
Typ.
Max.
Unit
V
V
nA
nA
m
A
–
4
–
100
100
–
250
–
1000
–
11
0.35
0.5
4
6
1100
375
150
70
55
15
20
10
12
8
5.0
12.5
1300
450
250
90
30
15
18
12
Zero Gate Voltage Drain Current
On State Drain Current 1
Static Drain
–
Source On-State Resistance
Forward Transconductance 1
Input capacitance
Output capacitance
Reverse transfer capacitance
Total Gate Charge
Gate
–
Source Charge
Gate
–
Drain (
“
Miller
”
) Charge
Turn
–
on Delay Time
Rise Time
Turn-off Delay Time
Fall Time
Internal Drain Inductance
Internal Source Inductance
Characteristic
Junction to Case
Case to Sink
Junction to Ambient
Max. Lead Temperature 0.063
”
from case for 10 sec.
Min.
Typ.
Max.
1.0
Unit
°
C/W
°
C/W
°
C/W
°
C
0.1
30
300
R
q
JC
R
q
CS
R
q
JA
T
L
(TO-3 package only)
(TO-3 package only)
(TO-3 package only)
THERMAL CHARACTERISTICS
Characteristic
Continuous Source Current (Body Diode)
Pulsed Source Current1(Body Diode)
Test Conditions
Min.
Typ.
Max.
–
11
–
44
Unit
–
4.6
270
2.0
I
S
I
SM
V
SD
t
rr
Q
rr
V
GS
= 0V , I
S
=
–
11A
T
case
= 25
°
C
I
F
=
–
11A , dl
F
/ dt = 100A/
m
s
T
j
= 150
°
C
I
F
=
–
11A , dl
F
/ dt = 100A/
m
s
T
j
= 150
°
C
Diode Forward Voltage2
Reverse Recovery Time
Reverse Recovery Charge
A
V
ns
m
C
SOURCE
–
DRAIN DIODE RATINGS AND CHARACTERISTICS
BV
DSS
V
GS(TH)
I
GSS
I
DSS
I
D(ON)
R
DS(ON)
g
fs
C
iss
C
oss
C
rss
Q
g
Q
gs
Q
gd
t
d(on)
t
r
t
d(off)
t
f
L
D
L
S
V
DD
= 0.5 x BV
DSS
I
D
=
–
6A
Z
O
= 4.7
W
m
A
A
W
S
pF
nC
ns
nH
nH
1) Pulse Test: Pulse Width < 300
m
S , Duty Cycle
￡
2%
2) Repetitive Rating: Pulse Width limited by maximum junction temperature.
ELECTRICAL RATINGS
(T
case
= 25
°
C unless otherwise stated)
Prelim. 7/00
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相關代理商/技術參數 |
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|---|---|
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