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參數資料
| 型號： | IRFB30N20D |
| 英文描述： | TRANSISTOR | MOSFET | N-CHANNEL | 200V V(BR)DSS | 30A I(D) | TO-220AB |
| 中文描述： | 晶體管| MOSFET的| N溝道| 200伏五（巴西）直| 30A條（丁）| TO - 220AB現有 |
| 文件頁數： | 2/11頁 |
| 文件大小： | 175K |
| 代理商： | IRFB30N20D |
IRFB/IRFS/IRFL30N20D
Static @ T
J
= 25°C (unless otherwise specified)
Parameter
V
(BR)DSS
Drain-to-Source Breakdown Voltage
V
(BR)DSS
/
T
J
Breakdown Voltage Temp. Coefficient
––– 0.25 ––– V/°C Reference to 25°C, I
D
= 1mA
R
DS(on)
Static Drain-to-Source On-Resistance
–––
V
GS(th)
Gate Threshold Voltage
–––
–––
Gate-to-Source Forward Leakage
–––
Gate-to-Source Reverse Leakage
–––
2
www.irf.com
Parameter
Min. Typ. Max. Units
17
–––
–––
70
–––
18
–––
33
–––
16
–––
38
–––
26
–––
10
–––
2370 –––
–––
390
–––
78
–––
2860 –––
–––
150
–––
170
Conditions
V
DS
= 50V, I
D
= 18A
g
fs
Q
g
Q
gs
Q
gd
t
d(on)
t
r
t
d(off)
t
f
C
iss
C
oss
C
rss
C
oss
C
oss
C
oss
eff.
Avalanche Characteristics
Forward Transconductance
Total Gate Charge
Gate-to-Source Charge
Gate-to-Drain ("Miller") Charge
Turn-On Delay Time
Rise Time
Turn-Off Delay Time
Fall Time
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Output Capacitance
Output Capacitance
Effective Output Capacitance
–––
110 I
D
= 18A
27
nC
49
–––
–––
–––
–––
S
V
DS
= 160V
V
GS
= 10V,
V
DD
= 100V
I
D
= 18A
R
G
= 2.5
R
D
= 5.4
V
GS
= 0V
V
DS
= 25V
= 1.0MHz
V
GS
= 0V, V
DS
= 1.0V, = 1.0MHz
V
GS
= 0V, V
DS
= 160V, = 1.0MHz
V
GS
= 0V, V
DS
= 0V to 160V
–––
–––
pF
–––
–––
Dynamic @ T
J
= 25°C (unless otherwise specified)
ns
Parameter
Typ.
–––
–––
–––
Max.
420
18
20
Units
mJ
A
mJ
E
AS
I
AR
E
AR
Thermal Resistance
Single Pulse Avalanche Energy
Avalanche Current
Repetitive Avalanche Energy
S
D
G
Parameter
Min. Typ. Max. Units
Conditions
MOSFET symbol
showing the
integral reverse
p-n junction diode.
T
J
= 25°C, I
S
= 18A, V
GS
= 0V
T
J
= 25°C, I
F
= 18A
di/dt = 100A/μs
I
S
Continuous Source Current
(Body Diode)
Pulsed Source Current
(Body Diode)
Diode Forward Voltage
Reverse Recovery Time
Reverse RecoveryCharge
Forward Turn-On Time
–––
–––
I
SM
–––
–––
V
SD
t
rr
Q
rr
t
on
–––
–––
–––
Intrinsic turn-on time is negligible (turn-on is dominated by L
S
+L
D
)
–––
200
1.7
1.3
300
2.6
V
ns
μC
Diode Characteristics
30
120
A
Min. Typ. Max. Units
200
–––
Conditions
V
GS
= 0V, I
D
= 250μA
–––
V
––– 0.082
–––
–––
–––
–––
–––
V
V
GS
= 10V, I
D
= 18A
V
DS
= V
GS
, I
D
= 250μA
V
DS
= 200V, V
GS
= 0V
V
DS
= 160V, V
GS
= 0V, T
J
= 150°C
V
GS
= 30V
V
GS
= -30V
3.0
5.0
25
250
100
-100
μA
nA
I
GSS
I
DSS
Drain-to-Source Leakage Current
Parameter
Typ.
–––
0.50
–––
–––
Max.
0.75
–––
62
40
Units
R
θ
JC
R
θ
CS
R
θ
JA
R
θ
JA
Junction-to-Case
Case-to-Sink, Flat, Greased Surface
Junction-to-Ambient
Junction-to-Ambient
°C/W
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相關代理商/技術參數 |
參數描述 |
|---|---|
| IRFB31N20 | 制造商:IRF 制造商全稱:International Rectifier 功能描述:Power MOSFET(Vdss=200V, Rds(on)max=0.082ohm, Id=31A) |
| IRFB31N20D | 制造商:International Rectifier 功能描述:Trans MOSFET N-CH 200V 31A 3-Pin(3+Tab) TO-220AB 制造商:International Rectifier 功能描述:MOSFET N TO-220 制造商:Distributed By MCM 功能描述:200V 31A 200W Gds Ir Hexfet TO-220Ab N-Ch |
| IRFB31N20DPBF | 功能描述:MOSFET MOSFT 200V 31A 82mOhm 70nC RoHS:否 制造商:STMicroelectronics 晶體管極性:N-Channel 汲極/源極擊穿電壓:650 V 閘/源擊穿電壓:25 V 漏極連續電流:130 A 電阻汲極/源極 RDS（導通）:0.014 Ohms 配置:Single 最大工作溫度: 安裝風格:Through Hole 封裝 / 箱體:Max247 封裝:Tube |
| IRFB3206GPBF | 功能描述:MOSFET MOSFT 60V 210A 3mOhm 120nC RoHS:否 制造商:STMicroelectronics 晶體管極性:N-Channel 汲極/源極擊穿電壓:650 V 閘/源擊穿電壓:25 V 漏極連續電流:130 A 電阻汲極/源極 RDS（導通）:0.014 Ohms 配置:Single 最大工作溫度: 安裝風格:Through Hole 封裝 / 箱體:Max247 封裝:Tube |
| IRFB3206PBF | 功能描述:MOSFET MOSFT 60V 210A 3mOhm 120nC Qg RoHS:否 制造商:STMicroelectronics 晶體管極性:N-Channel 汲極/源極擊穿電壓:650 V 閘/源擊穿電壓:25 V 漏極連續電流:130 A 電阻汲極/源極 RDS（導通）:0.014 Ohms 配置:Single 最大工作溫度: 安裝風格:Through Hole 封裝 / 箱體:Max247 封裝:Tube |
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