- 您現在的位置：買賣IC網 > PDF目錄384493 > IRFB61N15D (International Rectifier) Power MOSFET(Vdss=150V, Rds(on)max=0.032ohm, Id=50A) PDF資料下載
參數資料
| 型號： | IRFB61N15D |
| 廠商： | International Rectifier |
| 英文描述： | Power MOSFET(Vdss=150V, Rds(on)max=0.032ohm, Id=50A) |
| 中文描述： | 功率MOSFET（減振鋼板基本\u003d 150伏時，RDS（on）的最大值\u003d 0.032ohm，身份證\u003d 50A條） |
| 文件頁數： | 1/8頁 |
| 文件大?。?/td> | 211K |
| 代理商： | IRFB61N15D |
Notes
through
are on page 8
www.irf.com
1
5/3/01
IRFB61N15D
SMPS MOSFET
HEXFET
Power MOSFET
V
DSS
150V
R
DS(on)
max
0.032
I
D
60A
PD- 94207
Parameter
Max.
60
42
250
2.4
330
2.2
± 30
3.7
Units
I
D
@ T
C
= 25°C
I
D
@ T
C
= 100°C
I
DM
P
D
@T
A
= 25°C
P
D
@T
C
= 25°C
Continuous Drain Current, V
GS
@ 10V
Continuous Drain Current, V
GS
@ 10V
Pulsed Drain Current
Power Dissipation
Power Dissipation
Linear Derating Factor
Gate-to-Source Voltage
Peak Diode Recovery dv/dt
Operating Junction and
Storage Temperature Range
Soldering Temperature, for 10 seconds
Mounting torqe, 6-32 or M3 screw
10 lbfin (1.1Nm)
A
W
W/°C
V
V/ns
V
GS
dv/dt
T
J
T
STG
-55 to + 175
300 (1.6mm from case )
°C
Absolute Maximum Ratings
l
High frequency DC-DC converters
l
Motor Control
l
Uninterrutible Power Supplies
Benefits
l
Low Gate-to-Drain Charge to Reduce
Switching Losses
l
Fully Characterized Capacitance Including
Effective C
OSS
to Simplify Design, (See
App. Note AN1001)
l
Fully Characterized Avalanche Voltage
and Current
Applications
TO-220AB
Parameter
Typ.
–––
0.50
–––
Max.
0.45
–––
62
Units
R
θ
JC
R
θ
CS
R
θ
JA
Junction-to-Case
Case-to-Sink, Flat, Greased Surface
Junction-to-Ambient
°C/W
Thermal Resistance
相關PDF資料 |
PDF描述 |
|---|---|
| IRFB9N60 | 30V N-Channel PowerTrench MOSFET |
| IRFB9N60A | 30V N-Channel PowerTrench MOSFET |
| IRFB9N65 | Power MOSFET(Vdss=650V, Rds(on)max=0.93ohm, Id=8.5A) |
| IRFB9N65A | Power MOSFET(Vdss=650V, Rds(on)max=0.93ohm, Id=8.5A) |
| IRFBA22N50 | 30V N-Channel PowerTrench MOSFET |
相關代理商/技術參數 |
參數描述 |
|---|---|
| IRFB61N15DHR | 制造商:International Rectifier 功能描述:Trans MOSFET N-CH 150V 60A 3-Pin(3+Tab) TO-220AB |
| IRFB61N15DPBF | 功能描述:MOSFET 150V 1 N-CH HEXFET 32mOhms 95nC RoHS:否 制造商:STMicroelectronics 晶體管極性:N-Channel 汲極/源極擊穿電壓:650 V 閘/源擊穿電壓:25 V 漏極連續電流:130 A 電阻汲極/源極 RDS（導通）:0.014 Ohms 配置:Single 最大工作溫度: 安裝風格:Through Hole 封裝 / 箱體:Max247 封裝:Tube |
| IRFB7430GPBF | 制造商:International Rectifier 功能描述:MOSFET, 40V, 195A, 1.3 MOHM, 300 NC QG, TO-220AB - Rail/Tube 制造商:International Rectifier 功能描述:MOSFET N CH 40V 195A TO220AB 制造商:International Rectifier 功能描述:MOSFET, 40V, 195A, 1 300 nC Qg, TO-220AB |
| IRFB7430PBF | 功能描述:MOSFET 40V 1.3mOhm 195A HEXFET 375W 300nC RoHS:否 制造商:STMicroelectronics 晶體管極性:N-Channel 汲極/源極擊穿電壓:650 V 閘/源擊穿電壓:25 V 漏極連續電流:130 A 電阻汲極/源極 RDS（導通）:0.014 Ohms 配置:Single 最大工作溫度: 安裝風格:Through Hole 封裝 / 箱體:Max247 封裝:Tube |
| IRFB7434GPBF | 制造商:International Rectifier 功能描述:MOSFET, 40V, 195A, 1.6 MOHM, 216 NC QG, TO-220AB - Rail/Tube 制造商:International Rectifier 功能描述:MOSFET N CH 40V 195A TO220AB 制造商:International Rectifier 功能描述:TUBE / MOSFET, 40V, 195A, 1.6 mOhm, 216 nC Qg, TO-220AB |
發布緊急采購，3分鐘左右您將得到回復。