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參數(shù)資料
| 型號： | IRFBC20STRR |
| 英文描述： | TRANSISTOR | MOSFET | N-CHANNEL | 600V V(BR)DSS | 2.2A I(D) | TO-263AB |
| 中文描述： | 晶體管| MOSFET的| N溝道| 600V的五（巴西）直| 2.2AI（四）|對263AB |
| 文件頁數(shù)： | 7/10頁 |
| 文件大小： | 391K |
| 代理商： | IRFBC20STRR |
IRFBC20S/L
Peak Diode Recovery dv/dt Test Circuit
P.W.
Period
di/dt
Diode Recovery
dv/dt
Ripple
≤
5%
Body Diode
Forward Drop
Re-Applied
Voltage
Reverse
Recovery
Current
Body Diode Forward
Current
V
GS
=10V
V
DD
I
SD
Driver Gate Drive
D.U.T. I
SD
Waveform
D.U.T. V
DS
Waveform
Inductor Curent
D =
P.W.
Period
+
-
+
+
+
-
-
-
Fig 14.
For N-Channel HEXFETS
*
V
GS
= 5V for Logic Level Devices
R
G
V
DD
dv/dt controlled by R
G
Driver same type as D.U.T.
I
SD
controlled by Duty Factor "D"
D.U.T. - Device Under Test
D.U.T
Circuit Layout Considerations
Low Stray Inductance
Ground Plane
Low Leakage Inductance
Current Transformer
*
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相關PDF資料 |
PDF描述 |
|---|---|
| IRFBC30AL | 600V Single N-Channel HEXFET Power MOSFET in a TO-262 package |
| IRFBC30ASTRL | TRANSISTOR | MOSFET | N-CHANNEL | 600V V(BR)DSS | 3.6A I(D) | TO-252AA |
| IRFBC30ASTRR | TRANSISTOR | MOSFET | N-CHANNEL | 600V V(BR)DSS | 3.6A I(D) | TO-252AA |
| IRFBC30STRL | TRANSISTOR | MOSFET | N-CHANNEL | 600V V(BR)DSS | 3.6A I(D) | TO-263AB |
| IRFBC30STRR | TRANSISTOR | MOSFET | N-CHANNEL | 600V V(BR)DSS | 3.6A I(D) | TO-263AB |
相關代理商/技術參數(shù) |
參數(shù)描述 |
|---|---|
| IRFBC30 | 功能描述:MOSFET N-Chan 600V 3.6 Amp RoHS:否 制造商:STMicroelectronics 晶體管極性:N-Channel 汲極/源極擊穿電壓:650 V 閘/源擊穿電壓:25 V 漏極連續(xù)電流:130 A 電阻汲極/源極 RDS（導通）:0.014 Ohms 配置:Single 最大工作溫度: 安裝風格:Through Hole 封裝 / 箱體:Max247 封裝:Tube |
| IRFBC30A | 功能描述:MOSFET N-Chan 600V 3.6 Amp RoHS:否 制造商:STMicroelectronics 晶體管極性:N-Channel 汲極/源極擊穿電壓:650 V 閘/源擊穿電壓:25 V 漏極連續(xù)電流:130 A 電阻汲極/源極 RDS（導通）:0.014 Ohms 配置:Single 最大工作溫度: 安裝風格:Through Hole 封裝 / 箱體:Max247 封裝:Tube |
| IRFBC30AL | 功能描述:MOSFET N-Chan 600V 3.6 Amp RoHS:否 制造商:STMicroelectronics 晶體管極性:N-Channel 汲極/源極擊穿電壓:650 V 閘/源擊穿電壓:25 V 漏極連續(xù)電流:130 A 電阻汲極/源極 RDS（導通）:0.014 Ohms 配置:Single 最大工作溫度: 安裝風格:Through Hole 封裝 / 箱體:Max247 封裝:Tube |
| IRFBC30ALPBF | 功能描述:MOSFET N-Chan 600V 3.6 Amp RoHS:否 制造商:STMicroelectronics 晶體管極性:N-Channel 汲極/源極擊穿電壓:650 V 閘/源擊穿電壓:25 V 漏極連續(xù)電流:130 A 電阻汲極/源極 RDS（導通）:0.014 Ohms 配置:Single 最大工作溫度: 安裝風格:Through Hole 封裝 / 箱體:Max247 封裝:Tube |
| IRFBC30APBF | 功能描述:MOSFET N-Chan 600V 3.6 Amp RoHS:否 制造商:STMicroelectronics 晶體管極性:N-Channel 汲極/源極擊穿電壓:650 V 閘/源擊穿電壓:25 V 漏極連續(xù)電流:130 A 電阻汲極/源極 RDS（導通）:0.014 Ohms 配置:Single 最大工作溫度: 安裝風格:Through Hole 封裝 / 箱體:Max247 封裝:Tube |
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