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參數資料
| 型號： | IRFBL10N60A |
| 英文描述： | TRANSISTOR | MOSFET | N-CHANNEL | 600V V(BR)DSS | 11A I(D) | TO-263VAR |
| 中文描述： | 晶體管| MOSFET的| N溝道| 600V的五（巴西）直| 11A條（丁）|對263VAR |
| 文件頁數： | 1/8頁 |
| 文件大小： | 115K |
| 代理商： | IRFBL10N60A |
IRFBL10N60A
HEXFET
Power MOSFET
2/16/00
www.irf.com
1
PD - 91819C
Parameter
Max.
11
7.0
44
180
1.4
± 30
5.0
Units
I
D
@ T
C
= 25°C
I
D
@ T
C
= 100°C
I
DM
P
D
@T
C
= 25°C
Continuous Drain Current, V
GS
@ 10V
Continuous Drain Current, V
GS
@ 10V
Pulsed Drain Current
Power Dissipation
Linear Derating Factor
Gate-to-Source Voltage
Peak Diode Recovery dv/dt
Operating Junction and
Storage Temperature Range
Soldering Temperature, for 10 seconds
A
W
W/°C
V
V/ns
V
GS
dv/dt
T
J
T
STG
-55 to + 150
300 (1.6mm from case )
°C
SMPS MOSFET
Absolute Maximum Ratings
l
Switch Mode Power Supply ( SMPS )
l
Uninterruptable Power Supply
l
High Speed Power Switching
Benefits
l
Low Gate Charge Qg results in simple
Drive Requirement
l
Improved Gate, Avalanche and Dynamic
dv/dt Ruggedness
l
Fully Characterized Capacitance and
Avalanche Voltage and Current
Applications
V
DSS
600V
Rds(on) max
0.61
I
D
11A
Applicable Off Line SMPS Topologies:
l
Active Clamped Forward
l
Main Switch
Notes
through
are on page 8
Super-D
2
Pak
TM
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