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參數資料
| 型號： | IRFD110 |
| 廠商： | INTERSIL CORP |
| 元件分類： | 小信號晶體管 |
| 英文描述： | 1A, 100V, 0.600 Ohm, N-Channel Power MOSFET |
| 中文描述： | 1000 mA, 100 V, N-CHANNEL, Si, SMALL SIGNAL, MOSFET |
| 封裝： | HEXDIP-4 |
| 文件頁數： | 1/6頁 |
| 文件大小： | 52K |
| 代理商： | IRFD110 |
4-269
File Number
2314.3
CAUTION: These devices are sensitive to electrostatic discharge; follow proper ESD Handling Procedures.
http://www.intersil.com or 407-727-9207
|
Copyright
Intersil Corporation 1999
IRFD110
1A, 100V 0.600 Ohm, N-Channel Power
MOSFET
This N-Channel enhancement mode silicon gate power field
effect transistor is an advanced power MOSFET designed,
tested, and guaranteed to withstand a specified level of
energy in the breakdown avalanche mode of operation. All of
these power MOSFETs are designed for applications such
as switching regulators, switching convertors, motor drivers,
relay drivers, and drivers for high power bipolar switching
transistors requiring high speed and low gate drive power.
These types can be operated directly from integrated
circuits.
Formerly developmental type TA17441.
Features
1A, 100V
r
DS(ON)
= 0.600
Single Pulse Avalanche Energy Rated
SOA is Power Dissipation Limited
Nanosecond Switching Speeds
Linear Transfer Characteristics
High Input Impedance
Related Literature
- TB334 “Guidelines for Soldering Surface Mount
Components to PC Boards”
Symbol
Packaging
HEXDIP
Ordering Information
PART NUMBER
PACKAGE
BRAND
IRFD110
HEXDIP
IRFD110
NOTE: When ordering, use the entire part number.
G
D
S
SOURCE
GATE
DRAIN
Data Sheet
July 1999
相關PDF資料 |
PDF描述 |
|---|---|
| IRFD110 | Power MOSFET(Vdss=100V, Rds(on)=0.54ohm, Id=1.0A) |
| IRFD1Z0 | 0.4A and 0.5A, 60V and 100V, 2.4 and 3.2 Ohm, N-Channel Power MOSFETs |
| IRFD1Z1 | 0.4A and 0.5A, 60V and 100V, 2.4 and 3.2 Ohm, N-Channel Power MOSFETs |
| IRFD1Z2 | 0.4A and 0.5A, 60V and 100V, 2.4 and 3.2 Ohm, N-Channel Power MOSFETs |
| IRFD1Z3 | 0.4A and 0.5A, 60V and 100V, 2.4 and 3.2 Ohm, N-Channel Power MOSFETs |
相關代理商/技術參數 |
參數描述 |
|---|---|
| IRFD110PBF | 功能描述:MOSFET 100V Single N-Channel HEXFET RoHS:否 制造商:STMicroelectronics 晶體管極性:N-Channel 汲極/源極擊穿電壓:650 V 閘/源擊穿電壓:25 V 漏極連續電流:130 A 電阻汲極/源極 RDS（導通）:0.014 Ohms 配置:Single 最大工作溫度: 安裝風格:Through Hole 封裝 / 箱體:Max247 封裝:Tube |
| IRFD110PBF | 制造商:International Rectifier 功能描述:MOSFET |
| IRFD110R | 制造商:未知廠家 制造商全稱:未知廠家 功能描述:TRANSISTOR | MOSFET | N-CHANNEL | 100V V(BR)DSS | 1A I(D) | TO-250VAR |
| IRFD110U | 制造商:n/a 功能描述:IRFD110U LOC: N9B9B |
| IRFD111 | 制造商:Rochester Electronics LLC 功能描述:- Bulk |
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