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參數資料
| 型號： | IRFD1Z2 |
| 廠商： | HARRIS SEMICONDUCTOR |
| 元件分類： | 小信號晶體管 |
| 英文描述： | 0.4A and 0.5A, 60V and 100V, 2.4 and 3.2 Ohm, N-Channel Power MOSFETs |
| 中文描述： | 400 mA, 100 V, N-CHANNEL, Si, SMALL SIGNAL, MOSFET |
| 文件頁數： | 1/6頁 |
| 文件大小： | 57K |
| 代理商： | IRFD1Z2 |
5-1
Semiconductor
Features
0.4A and 0.5A, 60V and 100V
r
DS(ON)
= 2.4
and 3.2
SOA is Power Dissipation Limited
Nanosecond Switching Speeds
Linear Transfer Characteristics
High Input Impedance
Majority Carrier Device
Related Literature
- TB334 “Guidelines for Soldering Surface Mount
Components to PC Boards”
Description
These are N-Channel enhancement mode silicon gate
power field effect transistors designed for applications such
as switching regulators, switching converters, motor drivers,
relay drivers, and drivers for high power bipolar switching
transistors requiring high speed and low gate drive power.
They can be operated directly from integrated circuits.
Formerly developmental type TA17451.
Symbol
Packaging
HEXDIP
Ordering Information
PART NUMBER
PACKAGE
BRAND
IRFD1Z0
HEXDIP
IRFD1Z0
IRFD1Z1
HEXDIP
IRFD1Z1
IRFD1Z2
HEXDIP
IRFD1Z2
IRFD1Z3
HEXDIP
IRFD1Z3
NOTE: When ordering, use the entire part number.
G
D
S
SOURCE
GATE
DRAIN
July 1998
CAUTION: These devices are sensitive to electrostatic discharge. Users should follow proper ESD Handling Procedures.
Copyright
Harris Corporation 1998
File Number
2313.1
IRFD1Z0, IRFD1Z1,
IRFD1Z2, IRFD1Z3
0.4A and 0.5A, 60V and 100V, 2.4 and 3.2 Ohm,
N-Channel Power MOSFETs
相關PDF資料 |
PDF描述 |
|---|---|
| IRFD1Z3 | 0.4A and 0.5A, 60V and 100V, 2.4 and 3.2 Ohm, N-Channel Power MOSFETs |
| IRFD214 | Power MOSFET(Vdss=250V, Rds(on)=2.0ohm, Id=0.45A) |
| IRFD224 | Power MOSFET(Vdss=250V, Rds(on)=1.1ohm, Id=0.63A) |
| IRFD310 | 0.4A, 400V, 3.600 Ohm, N-Channel Power MOSFET |
| IRFD310 | Power MOSFET(Vdss=400V, Rds(on)=3.6ohm, Id=0.35A) |
相關代理商/技術參數 |
參數描述 |
|---|---|
| IRFD1Z3 | 制造商:Rochester Electronics LLC 功能描述:- Bulk 制造商:INT 功能描述:IRFD010 IR 制造商:Harris Corporation 功能描述: 制造商:Motorola Inc 功能描述: |
| IRFD210 | 功能描述:MOSFET N-Chan 200V 0.6 Amp RoHS:否 制造商:STMicroelectronics 晶體管極性:N-Channel 汲極/源極擊穿電壓:650 V 閘/源擊穿電壓:25 V 漏極連續電流:130 A 電阻汲極/源極 RDS（導通）:0.014 Ohms 配置:Single 最大工作溫度: 安裝風格:Through Hole 封裝 / 箱體:Max247 封裝:Tube |
| IRFD210PBF | 功能描述:MOSFET N-Chan 200V 0.6 Amp RoHS:否 制造商:STMicroelectronics 晶體管極性:N-Channel 汲極/源極擊穿電壓:650 V 閘/源擊穿電壓:25 V 漏極連續電流:130 A 電阻汲極/源極 RDS（導通）:0.014 Ohms 配置:Single 最大工作溫度: 安裝風格:Through Hole 封裝 / 箱體:Max247 封裝:Tube |
| IRFD210R | 制造商:未知廠家 制造商全稱:未知廠家 功能描述:TRANSISTOR | MOSFET | N-CHANNEL | 200V V(BR)DSS | 600MA I(D) | TO-250VAR |
| IRFD211 | 制造商:HARRIS 制造商全稱:HARRIS 功能描述:0.6A AND 0.45A, 150V AND 200V, 1.5 AND 2.4 OHM, N-CHANNEL POWER MOSFETS |
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