欧美成人免费电影,国产欧美一区二区三区精品酒店,精品国产a毛片,色网在线免费观看

參數(shù)資料
型號: IRFD320
廠商: HARRIS SEMICONDUCTOR
元件分類: 小信號晶體管
英文描述: 0.5A, 400V, 1.800 Ohm, N-Channel Power MOSFET
中文描述: 500 mA, 400 V, N-CHANNEL, Si, SMALL SIGNAL, MOSFET
文件頁數(shù): 1/8頁
文件大小: 478K
代理商: IRFD320
Parameter
Max.
0.49
0.31
3.9
1.0
0.0083
±20
48
0.49
0.10
4.0
-55 to + 150
Units
I
D
@ T
C
= 25°C
I
D
@ T
C
= 100°C
I
DM
P
D
@T
C
= 25°C
Continuous Drain Current, V
GS
@ 10 V
Continuous Drain Current, V
GS
@ 10 V
Pulsed Drain Current
Power Dissipation
Linear Derating Factor
Gate-to-Source Voltage
Single Pulse Avalanche Energy
Avalanche Current
Repetitive Avalanche Energy
Peak Diode Recovery dv/dt
Operating Junction and
Storage Temperature Range
Soldering Temperature, for 10 seconds
A
W
W/°C
V
mJ
A
mJ
V/ns
V
GS
E
AS
I
AR
E
AR
dv/dt
T
J
T
STG
°C
300 (1.6mm from case)
IRFD320
HEXFET
Power MOSFET
PD -9.1226
Revision 0
V
DSS
= 400V
R
DS(on)
= 1.8
I
D
= 0.49A
Absolute Maximum Ratings
Thermal Resistance
Parameter
Min.
Typ.
Max.
120
Units
°C/W
R
θ
JA
Junction-to-Ambient
Dynamic dv/dt Rating
Repetitive Avalanche Rated
For Automatic Insertion
End Stackable
Fast Switching
Ease of paralleling
Simple Drive Requirements
Third Generation HEXFETs from International Rectifier provide the designer
with the best combination of fast switching, ruggedized device design, low on-
resistance and cost-effectiveness.
The 4-pin DIP package is a low-cost machine-insertable case style which can be
stacked in multiple combinations on standard 0.1 inch pin centers. The dual drain
serves as a thermal link to the mounting surface for power dissipation levels up to
1 watt.
Description
HD-1
Next Data Sheet
Index
Previous Datasheet
To Order
相關(guān)PDF資料
PDF描述
IRFD9113 RES 137 OHM 1/4W 1% 1206 SMD
IRFD9113 -0.6A and -0.7A, -80V and -100V, 1.2 and 1.6 Ohm, P-Channel Power MOSFETs
IRFDC20 Power MOSFET(Vdss=600V, Rds(on)=4.4ohm, Id=0.32A)
IRFE210 HEXFET Transistor(HEXFET 晶體管)
IRFE9210 REPETITIVE AVALANCHE AND dv/dt RATED HEXFET TRANSISTORS SURFACE MOUNT (LCC-18)
相關(guān)代理商/技術(shù)參數(shù)
參數(shù)描述
IRFD320PBF 功能描述:MOSFET N-Chan 400V 0.49 Amp RoHS:否 制造商:STMicroelectronics 晶體管極性:N-Channel 汲極/源極擊穿電壓:650 V 閘/源擊穿電壓:25 V 漏極連續(xù)電流:130 A 電阻汲極/源極 RDS(導(dǎo)通):0.014 Ohms 配置:Single 最大工作溫度: 安裝風(fēng)格:Through Hole 封裝 / 箱體:Max247 封裝:Tube
IRFD320R 制造商:未知廠家 制造商全稱:未知廠家 功能描述:TRANSISTOR | MOSFET | N-CHANNEL | 400V V(BR)DSS | 500MA I(D) | TO-250VAR
IRFD321 制造商:Rochester Electronics LLC 功能描述:- Bulk
IRFD321R 制造商:未知廠家 制造商全稱:未知廠家 功能描述:TRANSISTOR | MOSFET | N-CHANNEL | 350V V(BR)DSS | 500MA I(D) | TO-250VAR
IRFD322 制造商:Rochester Electronics LLC 功能描述:- Bulk
主站蜘蛛池模板: 丹棱县| 原平市| 安陆市| 寿阳县| 水城县| 包头市| 奈曼旗| 金塔县| 太谷县| 拜城县| 成都市| 浦东新区| 汶上县| 财经| 永川市| 平阳县| 安康市| 富阳市| 惠来县| 金塔县| 尖扎县| 金坛市| 海阳市| 荔波县| 横山县| 吴桥县| 吉林省| 武城县| 中牟县| 扶沟县| 聊城市| 富裕县| 松阳县| 陵川县| 高平市| 连平县| 兴国县| 乌什县| 绍兴市| 公主岭市| 仁布县|