- 您現在的位置：買賣IC網 > PDF目錄360937 > IRFE330 TRANSISTOR | MOSFET | N-CHANNEL | 400V V(BR)DSS | 3A I(D) | LLCC PDF資料下載
參數資料
| 型號： | IRFE330 |
| 英文描述： | TRANSISTOR | MOSFET | N-CHANNEL | 400V V(BR)DSS | 3A I(D) | LLCC |
| 中文描述： | 晶體管| MOSFET的| N溝道| 400V五（巴西）直| 3A條（丁）| LLCC |
| 文件頁數： | 2/7頁 |
| 文件大小： | 229K |
| 代理商： | IRFE330 |
IRFE320
2
www.irf.com
Thermal Resistance
Parameter
Min Typ Max
Units
Test Conditions
RthJC
RthJ-PCB
Junction to Case
Junction to PC Board
—
—
—
— 26
"""
Soldered to a copper clad PC board
9.1
Source-Drain Diode Ratings and Characteristics
Parameter
Min Typ
Max Units
Test Conditions
IS
ISM
Continuous Source Current (Body Diode)
Pulse Source Current (Body Diode)
—
—
—
—
1.8
7.2
VSD
trr
QRR
Diode Forward Voltage
Reverse Recovery Time
Reverse Recovery Charge
—
—
—
—
—
—
1.4
650
5.0
V
nS
μc
T
j
= 25°C, IS = 1.8A, VGS = 0V
Tj = 25°C, IF = 1.8A, di/dt
≤
100A/
μ
s
VDD
≤
50V
ton
Forward Turn-On Time
Intrinsic turn-on time is negligible. Turn-on speed is substantially controlled by LS + LD.
A
For footnotes refer to the last page
Electrical Characteristics
@ Tj = 25°C (Unless Otherwise Specified)
Parameter
Drain-to-Source Breakdown Voltage
Temperature Coefficient of Breakdown
Voltage
Static Drain-to-Source On-State
Resistance
Gate Threshold Voltage
Forward Transconductance
Zero Gate Voltage Drain Current
Min
400
—
Typ
—
0.37
Max Units
—
—
Test Conditions
VGS = 0V, ID = 1.0mA
Reference to 25°C, ID = 1.0mA
BVDSS
BVDSS/
TJ
V
V/°C
RDS(on)
—
—
2.0
1.0
—
—
—
— 2.07
VGS =10V, ID =1.8A
— 4.0 V VDS = VGS, ID =250μA
—
—
S (
)
—
25
—
250
VGS = 0V, TJ = 125°C
—
100
—
-100
—
15.5
—
2.6
nC
—
8.3
—
40
—
35
—
60
—
35
6.1
—
nH
Measured from the center of
drain pad to center of source
pad
1.8
VGS = 10V, ID = 1.1A
VGS(th)
gfs
IDSS
VDS > 15V, IDS =1.1A
VDS=320V, VGS=0V
VDS =320V
IGSS
IGSS
Qg
Qgs
Qgd
td
(on)
tr
td
(off)
tf
LS + LD
Gate-to-Source Leakage Forward
Gate-to-Source Leakage Reverse
Total Gate Charge
Gate-to-Source Charge
Gate-to-Drain (‘Miller’) Charge
Turn-On Delay Time
Rise Time
Turn-Off Delay Time
Fall Time
Total Inductance
—
—
—
—
—
—
—
—
—
—
VGS = 20V
VGS = -20V
VGS =10V, ID= 1.8A
VDS =200V
VDD =200V, ID =1.8A,
RG =7.5
Ciss
Coss
Crss
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
—
—
—
350
100
45
VGS = 0V, VDS = 25V
f = 1.0MHz
—
—
pF
nA
n s
μ
A
相關PDF資料 |
PDF描述 |
|---|---|
| IRFE9110 | P-Channel Power MOSFET(Vdss:-100V,Id(cont):-2.2A,Vdgr:-1.2V)(P溝道功率MOS場效應管(Vdss:-200V,Id(cont):-11A,Vdgr:-200V)) |
| IRFE9110 | P-CHANNEL POWER MOSFET |
| IRFE9123 | TRANSISTOR | MOSFET | ARRAY | P-CHANNEL | 60V V(BR)DSS | 800MA I(D) | DIP |
| IRFE9130 | P-Channel Power MOSFET(Vdss:-100V,Id(cont):-6.1A,Vdgr:-0.345V)(P溝道功率MOS場效應管(Vdss:-100V,Id(cont):-6.1A,Vdgr:-0.345V)) |
| IRFE9130 | P-CHANNEL POWER MOSFET |
相關代理商/技術參數 |
參數描述 |
|---|---|
| IRFE420 | 制造商:International Rectifier 功能描述:TRANS MOSFET N-CH 500V 1.4A 18PIN LCC - Bulk |
| IRFE430 | 制造商:International Rectifier 功能描述:Trans MOSFET N-CH 500V 2.5A 18-Pin LLCC 制造商:International Rectifier 功能描述:TRANS MOSFET N-CH 500V 2.5A 18PIN LCC - Bulk 制造商:International Rectifier 功能描述:N CHANNEL MOSFET, 500V, 2.5A, LCC; Transistor Polarity:N Channel; Continuous Drain Current Id:2.5A; Drain Source Voltage Vds:500V; On Resistance Rds(on):1.5ohm; Rds(on) Test Voltage Vgs:10V; Threshold Voltage Vgs Typ:4V ;RoHS Compliant: No |
| IRFE9024 | 制造商:International Rectifier 功能描述:TRANS MOSFET P-CH 60V 5.4A 18PIN LCC - Bulk |
| IRFE9024SCV | 制造商:International Rectifier 功能描述:TRANS MOSFET P-CH 60V 5.4A 18PIN LCC - Bulk |
| IRFE9024SCX | 制造商:International Rectifier 功能描述:TRANS MOSFET P-CH 60V 5.4A 18PIN LCC - Bulk |
發布緊急采購，3分鐘左右您將得到回復。