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參數(shù)資料
| 型號(hào)： | IRFE9130 |
| 英文描述： | P-Channel Power MOSFET(Vdss:-100V,Id(cont):-6.1A,Vdgr:-0.345V)(P溝道功率MOS場效應(yīng)管(Vdss:-100V,Id(cont):-6.1A,Vdgr:-0.345V)) |
| 中文描述： | P溝道功率MOSFET（減振鋼板基本：- 100V的，身份證（續(xù)）：- 6.1A，Vdgr：- 0.345V）性（P溝道功率馬鞍山場效應(yīng)管（減振鋼板基本：- 100V的，身份證（續(xù)）：- 6.1A， Vdgr：- 0.345V）） |
| 文件頁數(shù)： | 1/2頁 |
| 文件大?。?/td> | 16K |
| 代理商： | IRFE9130 |
IRFE9130
10/98
Semelab plc.
Telephone +44(0)1455 556565. Fax +44(0)1455 552612. e-mail sales@semelab.co.uk
Website http://www.semelab.co.uk
MECHANICAL DATA
Dimensions in mm (inches)
1.39 (0.055)
1.15 (0.045)
0.76 (0.030)
0.51 (0.020)
1.39 (0.055)
1.02 (0.040)
15 16
13
12
14
3
4
5
6
7
17
18
1
2
11
10
8
9
9.14 (0.360)
8.64 (0.340)
1.27 (0.050)
1.07 (0.040)
≈
2.16 (0.085)
7.62 (0.300)
7.12 (0.280)
1.65 (0.065)
1.40 (0.055)
0.33 (0.013)
0.43 (0.017)
Rad.
Rad.
LCC4
P–CHANNEL
POWER MOSFET
FEATURES
SURFACE MOUNT
SMALL FOOTPRINT
HERMETICALLY SEALED
DYNAMIC dv/dt RATING
AVALANCHE ENERGY RATING
SIMPLE DRIVE REQUIREMENTS
LIGHT WEIGHT
V
DSS
I
D(cont)
R
DS(on)
-100V
-6.1A
0.345
V
GS
I
D
I
D
I
DM
P
D
Gate – Source Voltage
Continuous Drain Current @ T
case
= 25°C
Continuous Drain Current @ T
case
= 100°C
Pulsed Drain Current
Power Dissipation @ T
case
= 25°C
Linear Derating Factor
E
AS
dv/dt
Single Pulse Avalanche Energy
2
Peak Diode Recovery
3
T
J
, T
stg
Operating and Storage Temperature Range
Surface Temperature ( for 5 sec).
±20V
– 6.1A
– 3.8A
– 24A
22W
0.17W/°C
92mJ
– 5.5V/ns
– 55 to +150°C
300°C
ABSOLUTE MAXIMUM RATINGS
(T
case
= 25°C unless otherwise stated)
MOSFET
GATE
DRAIN
SOURCE
TRANSISTOR
BASE
COLLECTOR
EMITTER
PINS
4,5
1,2,15,16,17,18
6,7,8,9,10,11,12,13
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