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參數資料
| 型號： | IRFE9130 |
| 英文描述： | P-Channel Power MOSFET(Vdss:-100V,Id(cont):-6.1A,Vdgr:-0.345V)(P溝道功率MOS場效應管(Vdss:-100V,Id(cont):-6.1A,Vdgr:-0.345V)) |
| 中文描述： | P溝道功率MOSFET（減振鋼板基本：- 100V的，身份證（續）：- 6.1A，Vdgr：- 0.345V）性（P溝道功率馬鞍山場效應管（減振鋼板基本：- 100V的，身份證（續）：- 6.1A， Vdgr：- 0.345V）） |
| 文件頁數： | 2/2頁 |
| 文件大小： | 16K |
| 代理商： | IRFE9130 |
IRFE9130
10/98
Semelab plc.
Telephone +44(0)1455 556565. Fax +44(0)1455 552612. e-mail sales@semelab.co.uk
Website http://www.semelab.co.uk
Parameter
STATIC ELECTRICAL RATINGS
Test Conditions
Min.
Typ.
Max.
Unit
–100
– 0.10
0.30
0.345
– 4
– 2
2.5
– 25
– 250
– 100
100
800
350
125
14.7
1.0
2.0
38.4
7.1
21
60
140
140
140
–1.6
–24
–4.7
250
3.0
Negligible
1.8
4.3
5.8
19
V
GS
= 0
Reference to 25°C
I
D
= –1mA
V
GS
= –10V
V
GS
= –10V
V
DS
= V
GS
V
DS
≥
–15V
V
GS
= 0
I
D
= –1mA
I
D
= –3.8A
I
D
= –6.1A
I
D
= –250mA
I
DS
= –3.8A
V
DS
= 0.8BV
DSS
T
J
= 125°C
V
GS
= –20V
V
GS
= 20V
V
GS
= 0
V
DS
= –25V
f = 1MHz
V
GS
= –10V
I
D
= –6.1A
V
DS
= 0.5BV
DSS
V
DD
= –50V
I
D
= –6.1A
R
G
= 7.5
I
S
= –1.6A
V
GS
= 0
I
F
= –6.1A
d
i
/ d
t
≤
–100A/
μ
s V
DD
≤
–50V
T
J
= 25°C
T
J
= 25°C
ELECTRICAL CHARACTERISTICS
(Tcase= 25°C unless otherwise stated)
Drain – Source Breakdown Voltage
Temperature Coefficient of
Breakdown Voltage
Static Drain – Source On–State
Resistance
1
Gate Threshold Voltage
Forward Transconductance
1
Zero Gate Voltage Drain Current
Forward Gate
– Source Leakage
Reverse Gate
– Source Leakage
DYNAMIC CHARACTERISTICS
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Total Gate Charge
Gate – Source Charge
Gate – Drain (“Miller”) Charge
Turn–On Delay Time
Rise Time
Turn–Off Delay Time
Fall Time
SOURCE – DRAIN DIODE CHARACTERISTICS
Continuous Source Current
Pulse Source Current
2
Diode Forward Voltage
1
Reverse Recovery Time
Reverse Recovery Charge
1
Forward Turn–On Time
PACKAGE CHARACTERISTICS
V
V/°C
V
S (
é
)
μ
A
nA
pF
nC
ns
A
V
ns
μ
C
nH
°C/W
BV
DSS
BV
DSS
T
J
R
DS(on)
V
GS(th)
g
fs
I
DSS
I
GSS
I
GSS
C
iss
C
oss
C
rss
Q
g
Q
gs
Q
gd
t
d(on)
t
r
t
d(off)
t
f
I
S
I
SM
V
SD
t
rr
Q
rr
t
on
L
D
L
S
R
θ
JC
R
θ
JPC
Notes
1) Pulse Test: Pulse Width
≤
300ms,
δ ≤
2%
2) Repetitive Rating – Pulse width limited by maximum junction temperature.
Internal Drain Inductance
(measured from 6mm down drain lead to centre of die)
Internal Source Inductance
(from 6mm down source lead to source bond pad)
THERMAL CHARACTERISTICS
Thermal Resistance Junction – Case
Thermal Resistance Junction – PC Board
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