- 您現在的位置：買賣IC網 > PDF目錄377508 > IRFIB5N50L (International Rectifier) MOTOR Control Application PDF資料下載
參數資料
| 型號： | IRFIB5N50L |
| 廠商： | International Rectifier |
| 英文描述： | MOTOR Control Application |
| 中文描述： | 電機控制中的應用 |
| 文件頁數： | 1/9頁 |
| 文件大小： | 185K |
| 代理商： | IRFIB5N50L |
IRFIB5N50L
08/19/04
www.irf.com
1
SMPS MOSFET
HEXFET Power MOSFET
V
DSS
R
DS(on)
typ.
Trr
typ.
500V
0.67
TO-220 Full-Pak
S
D
G
Features and Benefits
!
"
Applications
#$
%$
&$
#'
I
D
73ns
4.7A
Absolute Maximum Ratings
Parameter
Max.
4.7
3.0
16
42
Units
I
D
@ T
C
= 25°C
I
D
@ T
C
= 100°C Continuous Drain Current, V
GS
@ 10V
I
DM
Pulsed Drain Current
P
D
@T
C
= 25°C Power Dissipation
Continuous Drain Current, V
GS
@ 10V
A
W
Linear Derating Factor
Gate-to-Source Voltage
0.33
±30
W/°C
V
V
GS
dv/dt
T
J
T
STG
Peak Diode Recovery dv/dt
Operating Junction and
Storage Temperature Range
19
V/ns
-55 to + 150
°C
Soldering Temperature, for 10 seconds
Mounting torque, 6-32 or M3 screw
Diode Characteristics
Symbol
Parameter
I
S
Continuous Source Current
300 (1.6mm from case )
10lb in (1.1N m)
Min. Typ. Max. Units
–––
–––
Conditions
MOSFET symbol
4.7
(Body Diode)
Pulsed Source Current
A
showing the
integral reverse
I
SM
–––
–––
16
(Body Diode)
Diode Forward Voltage
Reverse Recovery Time
p-n junction diode.
T
J
= 25°C, I
S
= 4.0A, V
GS
= 0V
T
J
= 25°C, I
F
= 4.0A
T
J
= 125°C, di/dt = 100A/μs
nC T
J
= 25°C, I
S
= 4.0A, V
GS
= 0V
T
J
= 125°C, di/dt = 100A/μs
A
T
J
= 25°C
V
SD
t
rr
–––
–––
–––
–––
–––
–––
Intrinsic turn-on time is negligible (turn-on is dominated by LS+LD)
–––
73
99
200
360
6.7
1.5
110
150
310
540
10
V
ns
Q
rr
Reverse Recovery Charge
I
RRM
t
on
Reverse Recovery Current
Forward Turn-On Time
相關PDF資料 |
PDF描述 |
|---|---|
| IRFIB5N65A | N Channel SMPS MOSFET(N溝道開關模式電源MOS場效應管) |
| IRFIB5N65 | Power MOSFET(Vdss=650V, Rds(on)max=0.93ohm, Id=5.1A) |
| IRFIB7N50A | SMPS MOSFET(開關模式電源MOS場效應管) |
| IRFIBC20 | Power MOSFET(Vdss=600V, Rds(on)=4.4ohm, Id=1.7A) |
| IRFIBC20G | Power MOSFET(Vdss=600V, Rds(on)=4.4ohm, Id=1.7A) |
相關代理商/技術參數 |
參數描述 |
|---|---|
| IRFIB5N50LPBF | 功能描述:MOSFET N-Chan 500V 4.7 Amp RoHS:否 制造商:STMicroelectronics 晶體管極性:N-Channel 汲極/源極擊穿電壓:650 V 閘/源擊穿電壓:25 V 漏極連續電流:130 A 電阻汲極/源極 RDS（導通）:0.014 Ohms 配置:Single 最大工作溫度: 安裝風格:Through Hole 封裝 / 箱體:Max247 封裝:Tube |
| IRFIB5N65 | 制造商:IRF 制造商全稱:International Rectifier 功能描述:Power MOSFET(Vdss=650V, Rds(on)max=0.93ohm, Id=5.1A) |
| IRFIB5N65A | 功能描述:MOSFET N-Chan 650V 5.1 Amp RoHS:否 制造商:STMicroelectronics 晶體管極性:N-Channel 汲極/源極擊穿電壓:650 V 閘/源擊穿電壓:25 V 漏極連續電流:130 A 電阻汲極/源極 RDS（導通）:0.014 Ohms 配置:Single 最大工作溫度: 安裝風格:Through Hole 封裝 / 箱體:Max247 封裝:Tube |
| IRFIB5N65APBF | 功能描述:MOSFET N-Chan 650V 5.1 Amp RoHS:否 制造商:STMicroelectronics 晶體管極性:N-Channel 汲極/源極擊穿電壓:650 V 閘/源擊穿電壓:25 V 漏極連續電流:130 A 電阻汲極/源極 RDS（導通）:0.014 Ohms 配置:Single 最大工作溫度: 安裝風格:Through Hole 封裝 / 箱體:Max247 封裝:Tube |
| IRFIB6N60A | 功能描述:MOSFET N-Chan 600V 5.5 Amp RoHS:否 制造商:STMicroelectronics 晶體管極性:N-Channel 汲極/源極擊穿電壓:650 V 閘/源擊穿電壓:25 V 漏極連續電流:130 A 電阻汲極/源極 RDS（導通）:0.014 Ohms 配置:Single 最大工作溫度: 安裝風格:Through Hole 封裝 / 箱體:Max247 封裝:Tube |
發布緊急采購，3分鐘左右您將得到回復。