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參數(shù)資料
| 型號： | IRFL014NTR |
| 英文描述： | TRANSISTOR | MOSFET | N-CHANNEL | 55V V(BR)DSS | 2.7A I(D) | SOT-223 |
| 中文描述： | 晶體管| MOSFET的| N溝道| 55V的五（巴西）直| 2.7AI（四）|的SOT - 223 |
| 文件頁數(shù)： | 2/8頁 |
| 文件大小： | 174K |
| 代理商： | IRFL014NTR |
IRFL014N
2
www.irf.com
Parameter
Min. Typ. Max. Units
55
–––
–––
0.054 –––
–––
–––
2.0
–––
1.6
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
7.0
–––
1.2
–––
3.3
–––
6.6
–––
7.1
–––
12
–––
3.3
–––
190
–––
72
–––
33
Conditions
V
GS
= 0V, I
D
= 250μA
Reference to 25°C, I
D
= 1mA
V
GS
= 10V, I
D
= 1.9A
V
DS
= V
GS
, I
D
= 250μA
V
DS
= 25V, I
D
= 0.85A
V
DS
= 44V, V
GS
= 0V
V
DS
= 44V, V
GS
= 0V, T
J
= 150°C
V
GS
= 20V
V
GS
= -20V
I
D
= 1.7A
V
DS
= 44V
V
GS
= 10V, See Fig. 6 and 13
V
DD
= 28V
I
D
= 1.7A
R
G
= 6.0
R
D
= 16
, See Fig. 10
V
GS
= 0V
V
DS
= 25V
= 1.0MHz, See Fig. 5
V
(BR)DSS
V
(BR)DSS
/
T
J
Breakdown Voltage Temp. Coefficient
R
DS(on)
Static Drain-to-Source On-Resistance
V
GS(th)
Gate Threshold Voltage
g
fs
Forward Transconductance
Drain-to-Source Breakdown Voltage
–––
V
V/°C
V
S
0.16
4.0
–––
1.0
25
100
-100
11
1.8
5.0
–––
–––
–––
–––
–––
–––
–––
μA
Gate-to-Source Forward Leakage
Gate-to-Source Reverse Leakage
Total Gate Charge
Gate-to-Source Charge
Gate-to-Drain ("Miller") Charge
Turn-On Delay Time
Rise Time
Turn-Off Delay Time
Fall Time
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
nA
Q
g
Q
gs
Q
gd
t
d(on)
t
r
t
d(off)
t
f
C
iss
C
oss
C
rss
nC
pF
Electrical Characteristics @ T
J
= 25°C (unless otherwise specified)
I
GSS
ns
I
DSS
Drain-to-Source Leakage Current
Parameter
Min. Typ. Max. Units
Conditions
MOSFET symbol
showing the
integral reverse
p-n junction diode.
T
J
= 25°C, I
S
= 1.7A, V
GS
= 0V
T
J
= 25°C, I
F
= 1.7A
di/dt = 100A/μs
I
S
Continuous Source Current
(Body Diode)
Pulsed Source Current
(Body Diode)
Diode Forward Voltage
Reverse Recovery Time
Reverse RecoveryCharge
I
SM
V
SD
t
rr
Q
rr
–––
–––
–––
–––
41
64
1.0
61
95
V
ns
nC
Source-Drain Ratings and Characteristics
–––
–––
–––
–––
15
1.3
A
Repetitive rating; pulse width limited by
max. junction temperature. ( See fig. 11 )
I
SD
≤
1.7A, di/dt
≤
250A/μs, V
DD
≤
V
(BR)DSS
,
T
J
≤
150°C
Pulse width
≤
300μs; duty cycle
≤
2%.
Notes:
V
DD
= 25V, starting T
J
= 25°C, L = 8.2mH
R
G
= 25
, I
AS
= 3.4A. (See Figure 12)
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