- 您現(xiàn)在的位置：買賣IC網(wǎng) > PDF目錄360942 > IRFN150SMD N-Channel Power MOSFET(Vdss:100V,Id(cont):19A,Rds(on):0.070Ω)(N溝道功率MOS場效應(yīng)管(Vdss:100V,Id(cont):19A,Rds(on):0.070Ω)) PDF資料下載
參數(shù)資料
| 型號： | IRFN150SMD |
| 英文描述： | N-Channel Power MOSFET(Vdss:100V,Id(cont):19A,Rds(on):0.070Ω)(N溝道功率MOS場效應(yīng)管(Vdss:100V,Id(cont):19A,Rds(on):0.070Ω)) |
| 中文描述： | N溝道功率MOSFET（減振鋼板基本：100V的，身份證（續(xù)）：19A條的Rds（on）：0.070Ω）（不適用馬鞍山溝道功率場效應(yīng)管（減振鋼板基本：100V的，身份證（續(xù)）：19A條的Rds（on） ：0.070Ω）） |
| 文件頁數(shù)： | 1/2頁 |
| 文件大小： | 22K |
| 代理商： | IRFN150SMD |
IRFN150SMD
Prelim.7/00
LA B
MECHANICAL DATA
Dimensions in mm (inches)
S E M E
Semelab plc.
Telephone +44(0)1455 556565. Fax +44(0)1455 552612.
E-mail:
sales@semelab.co.uk
http://www.semelab.co.ukV
GS
I
D
I
D
I
DM
P
D
Gate – Source Voltage
Continuous Drain Current
Continuous Drain Current
Pulsed Drain Current
1
Power Dissipation @ T
case
= 25°C
Linear Derating Factor
Single Pulse Avalanche Energy
2
Peak Diode Recovery
3
Operating and Storage Temperature Range
Package Mounting Surface Temperature (for 5 sec)
Thermal Resistance Junction to Case
Thermal Resistance Junction to PCB (Typical)
(V
GS
= 0 , T
case
= 25°C)
(V
GS
= 0 , T
case
= 100°C)
E
AS
dv/dt
T
J
, T
stg
T
L
R
q
JC
R
q
J–PCB
±20V
27A
19A
108A
100W
0.8W/°C
150mJ
5.5V/ns
–55 to 150°C
300°C
1.25°C/W
3°C/W
ABSOLUTE MAXIMUM RATINGS
(T
case
= 25°C unless otherwise stated)
SMD1
Notes
1) Pulse Test: Pulse Width
￡
300ms,
d ￡
2%
2) @ V
DD
= 25V , L
3
0.3mH , R
G
= 25
W
, Peak I
L
= 27A , Starting T
J
= 25°C
3) @ I
SD
￡
27A , di/dt
￡
70A/
m
s , V
DD
￡
BV
DSS
, T
J
￡
150°C , SUGGESTED R
G
= 2.35
W
N–CHANNEL
POWER MOSFET
FEATURES
HERMETICALLY SEALED SURFACE
MOUNT PACKAGE
SMALL FOOTPRINT – EFFICIENT USE OF
PCB SPACE.
SIMPLE DRIVE REQUIREMENTS
LIGHTWEIGHT
HIGH PACKING DENSITIES
Pad 1 – Source
Pad 2 – Drain
Pad 3 – Gate
Note:
IRFxxxSM also available with
pins 1 and 3 reversed.
V
DSS
I
D(cont)
R
DS(on)
100V
19A
0.070
W
相關(guān)PDF資料 |
PDF描述 |
|---|---|
| IRFN150 | POWER MOSFET N-CHANNEL(BVdss=100V, Rds(on)=0.060ohm, Id=34A) |
| IRFN150SMD | N-CHANNEL POWER MOSFET |
| IRFN240SMD | N-Channel Power MOSFET(Vdss:200V,Id(cont):13.9A,Rds(on):0.180Ω)(N溝道功率MOS場效應(yīng)管(Vdss:200V,Id(cont):13.9A,Rds(on):0.180Ω)) |
| IRFN240 | POWER MOSFET N-CHANNEL(BVdss=200V, Rds(on)=0.18ohm, Id=18A) |
| IRFN240SMD | N-CHANNEL POWER MOSFET |
相關(guān)代理商/技術(shù)參數(shù) |
參數(shù)描述 |
|---|---|
| IRFN214B | 制造商:FAIRCHILD 制造商全稱:Fairchild Semiconductor 功能描述:250V N-Channel MOSFET |
| IRFN214BTA | 制造商:Rochester Electronics LLC 功能描述: 制造商:Fairchild Semiconductor Corporation 功能描述: |
| IRFN214BTA_FP001 | 功能描述:MOSFET 250V N-CHAN RoHS:否 制造商:STMicroelectronics 晶體管極性:N-Channel 汲極/源極擊穿電壓:650 V 閘/源擊穿電壓:25 V 漏極連續(xù)電流:130 A 電阻汲極/源極 RDS（導(dǎo)通）:0.014 Ohms 配置:Single 最大工作溫度: 安裝風(fēng)格:Through Hole 封裝 / 箱體:Max247 封裝:Tube |
| IRFN240 | 制造商:International Rectifier 功能描述:TRANS MOSFET N-CH 200V 18A 3SMD-1 - Bulk |
| IRFN240SMD | 制造商:SEME-LAB 制造商全稱:Seme LAB 功能描述:N-CHANNEL POWER MOSFET |
發(fā)布緊急采購，3分鐘左右您將得到回復(fù)。