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參數資料
| 型號： | IRFP064V |
| 廠商： | International Rectifier |
| 英文描述： | Power MOSFET(Vdss=60V, Rds(on)=5.5mohm, Id=130A) |
| 中文描述： | 功率MOSFET（減振鋼板基本\u003d 60V的，的Rds（on）\u003d 5.5mohm，身份證\u003d 130A的） |
| 文件頁數： | 1/8頁 |
| 文件大小： | 210K |
| 代理商： | IRFP064V |
IRFP064V
HEXFET
Power MOSFET
3/30/01
Parameter
Typ.
–––
0.24
–––
Max.
0.60
–––
40
Units
R
θ
JC
R
θ
CS
R
θ
JA
www.irf.com
Junction-to-Case
Case-to-Sink, Flat, Greased Surface
Junction-to-Ambient
°C/W
Thermal Resistance
1
V
DSS
= 60V
R
DS(on)
= 5.5m
I
D
= 130A
S
D
G
Advanced HEXFET
Power MOSFETs from International
Rectifier utilize advanced processing techniques to achieve
extremely low on-resistance per silicon area. This benefit,
combined with the fast switching speed and ruggedized
device design that HEXFET power MOSFETs are well
known for, provides the designer with an extremely efficient
and reliable device for use in a wide variety of applications.
The TO-247 package is preferred for commercial-industrial
applications where higher power levels preclude the use
of TO-220 devices. The TO-247 is similar but superior to
the earlier TO-218 package because of its isolated
mounting hole.
l
Advanced Process Technology
l
Ultra Low On-Resistance
l
Dynamic dv/dt Rating
l
175°C Operating Temperature
l
Fast Switching
l
Fully Avalanche Rated
l
Optimized for SMPS Applications
Description
PD - 94112
Absolute Maximum Ratings
Parameter
Max.
130
95
520
250
1.7
± 20
130
25
4.7
Units
I
D
@ T
C
= 25°C
I
D
@ T
C
= 100°C
I
DM
P
D
@T
C
= 25°C
Continuous Drain Current, V
GS
@ 10V
Continuous Drain Current, V
GS
@ 10V
Pulsed Drain Current
Power Dissipation
Linear Derating Factor
Gate-to-Source Voltage
Avalanche Current
Repetitive Avalanche Energy
Peak Diode Recovery dv/dt
Operating Junction and
Storage Temperature Range
Soldering Temperature, for 10 seconds
Mounting torque, 6-32 or M3 srew
A
W
W/°C
V
A
mJ
V/ns
V
GS
I
AR
E
AR
dv/dt
T
J
T
STG
-55 to + 175
300 (1.6mm from case )
10 lbfin (1.1Nm)
°C
TO-247AC
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相關代理商/技術參數 |
參數描述 |
|---|---|
| IRFP064VHR | 制造商:International Rectifier 功能描述:Trans MOSFET N-CH 60V 130A 3-Pin(3+Tab) TO-247AC |
| IRFP064VPBF | 功能描述:MOSFET 60V 1 N-CH HEXFET 5.5mOhms 173.3nC RoHS:否 制造商:STMicroelectronics 晶體管極性:N-Channel 汲極/源極擊穿電壓:650 V 閘/源擊穿電壓:25 V 漏極連續電流:130 A 電阻汲極/源極 RDS（導通）:0.014 Ohms 配置:Single 最大工作溫度: 安裝風格:Through Hole 封裝 / 箱體:Max247 封裝:Tube |
| IRFP130 | 制造商:SAMSUNG 制造商全稱:Samsung semiconductor 功能描述:N-CHANNEL POWER MOSFETS |
| IRFP131 | 制造商:SAMSUNG 制造商全稱:Samsung semiconductor 功能描述:N-CHANNEL POWER MOSFETS |
| IRFP132 | 制造商:SAMSUNG 制造商全稱:Samsung semiconductor 功能描述:N-CHANNEL POWER MOSFETS |
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