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參數(shù)資料
| 型號： | IRFP17N50L |
| 廠商： | International Rectifier |
| 英文描述： | Power MOSFET(Vdss=500V, Rds(on)typ.=0.28ohm, Id=16A) |
| 中文描述： | 功率MOSFET（減振鋼板基本\u003d 500V及的Rds（on）典型.\u003d 0.28ohm，身份證\u003d 16A條） |
| 文件頁數(shù)： | 1/8頁 |
| 文件大小： | 91K |
| 代理商： | IRFP17N50L |
IRFP17N50L
09/20/01
www.irf.com
1
SMPS MOSFET
HEXFET
Power MOSFET
R
DS(on)
typ.
T
rr
typ.
0.28
Parameter
Max.
16
11
64
220
1.8
± 30
13
Units
I
D
@ T
C
= 25°C
I
D
@ T
C
= 100°C
I
DM
P
D
@T
C
= 25°C
Continuous Drain Current, V
GS
@ 10V
Continuous Drain Current, V
GS
@ 10V
Pulsed Drain Current
Power Dissipation
Linear Derating Factor
Gate-to-Source Voltage
Peak Diode Recovery dv/dt
Operating Junction and
Storage Temperature Range
Soldering Temperature, for 10 seconds
(1.6mm from case )
Mounting Torque, 6-32 or M3 screw
A
W
W/°C
V
V/ns
V
GS
dv/dt
T
J
T
STG
-55 to + 150
300
°C
Absolute Maximum Ratings
Benefits
Low Gate Charge Qg results in Simple Drive Requirement
Improved Gate, Avalanche and Dynamic dv/dt Ruggedness
Fully Characterized Capacitance and Avalanche Voltage
and Current
Low Trr and Soft Diode Recovery
High Performance Optimised Anti-parallel Diode
Applications
Switch Mode Power Supply (SMPS)
Zero Voltage Switching (ZVS) and High
Frequency Circuit
Uninterruptible Power Supply
High Speed Power Switching
PWM Inverters
lbft.in(N.m)
10
S
D
G
Diode Characteristics
Symbol
I
S
Continuous Source Current
(Body Diode)
I
SM
Pulsed Source Current
(Body Diode)
V
SD
Diode Forward Voltage
A
Parameter
Min. Typ. Max. Units
Conditions
16
MOSFET symbol
showing the
integral reverse
p-n junction diode.
T
J
= 25
°
C, I
S
= 16A, V
GS
= 0V
T
J
= 25
°
C
T
J
= 125
°
C
T
J
= 25
°
C
T
J
= 125
°
C
–––
–––
64
–––
–––
–––
–––
–––
–––
–––
–––
–––
170
220
470
810 1210
7.3
Intrinsic turn-on time is negligible (turn-on is dominated by L
S
+L
D
)
1.5
250
330
710
V
I
F
= 16A
di/dt = 100A/μs
I
RRM
t
on
Reverse Recovery Current
Forward Turn-On Time
11
A
t
rr
Reverse Recovery Time
Q
rr
Reverse Recovery Charge
ns
nC
TO-247AC
V
DSS
500V
I
D
16A
170ns
PD - 94322
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| IRFP17N50LPBF | 功能描述:MOSFET N-Chan 500V 16 Amp RoHS:否 制造商:STMicroelectronics 晶體管極性:N-Channel 汲極/源極擊穿電壓:650 V 閘/源擊穿電壓:25 V 漏極連續(xù)電流:130 A 電阻汲極/源極 RDS（導(dǎo)通）:0.014 Ohms 配置:Single 最大工作溫度: 安裝風(fēng)格:Through Hole 封裝 / 箱體:Max247 封裝:Tube |
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| IRFP21N60LPBF | 功能描述:MOSFET N-Chan 600V 21 Amp RoHS:否 制造商:STMicroelectronics 晶體管極性:N-Channel 汲極/源極擊穿電壓:650 V 閘/源擊穿電壓:25 V 漏極連續(xù)電流:130 A 電阻汲極/源極 RDS（導(dǎo)通）:0.014 Ohms 配置:Single 最大工作溫度: 安裝風(fēng)格:Through Hole 封裝 / 箱體:Max247 封裝:Tube |
| IRFP22N50A | 功能描述:MOSFET N-Chan 500V 22 Amp RoHS:否 制造商:STMicroelectronics 晶體管極性:N-Channel 汲極/源極擊穿電壓:650 V 閘/源擊穿電壓:25 V 漏極連續(xù)電流:130 A 電阻汲極/源極 RDS（導(dǎo)通）:0.014 Ohms 配置:Single 最大工作溫度: 安裝風(fēng)格:Through Hole 封裝 / 箱體:Max247 封裝:Tube |
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