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參數資料
| 型號： | IRFP26N60L |
| 廠商： | International Rectifier |
| 英文描述： | SMPS MOSFET |
| 中文描述： | MOSFET的開關電源 |
| 文件頁數： | 1/9頁 |
| 文件大小： | 198K |
| 代理商： | IRFP26N60L |
IRFP26N60L
SMPS MOSFET
HEXFET Power MOSFET
V
DSS
R
DS(on)
typ.
Trr
typ.
600V
210m
Features and Benefits
!
"
TO-247AC
10/19/04
www.irf.com
1
S
D
G
Applications
#$
%$
&$
#'
I
D
26A
170ns
Absolute Maximum Ratings
Parameter
Max.
26
17
100
470
Units
I
D
@ T
C
= 25°C Continuous Drain Current, V
GS
@ 10V
I
D
@ T
C
= 100°CContinuous Drain Current, V
GS
@ 10V
I
DM
P
D
@T
C
= 25°C Power Dissipation
A
Pulsed Drain Current
W
Linear Derating Factor
Gate-to-Source Voltage
Peak Diode Recovery dv/dt
Operating Junction and
Storage Temperature Range
3.8
±30
W/°C
V
V
GS
dv/dt
T
J
T
STG
30
V/ns
-55 to + 150
°C
Soldering Temperature, for 10 seconds
Mounting torque, 6-32 or M3 screw
Diode Characteristics
Symbol
Parameter
I
S
Continuous Source Current
300 (1.6mm from case )
1.1(10)
Nm (lbfin)
Min. Typ. Max. Units
–––
–––
Conditions
MOSFET symbol
26
(Body Diode)
Pulsed Source Current
(Body Diode)
Diode Forward Voltage
Reverse Recovery Time
A
showing the
integral reverse
I
SM
–––
–––
100
p-n junction diode.
T
J
= 25°C, I
S
= 26A, V
GS
= 0V
T
J
= 25°C, I
F
= 26A
T
J
= 125°C, di/dt = 100A/μs
nC T
J
= 25°C, I
S
= 26A, V
GS
= 0V
T
J
= 125°C, di/dt = 100A/μs
A
T
J
= 25°C
V
SD
t
rr
–––
–––
–––
–––
–––
–––
Intrinsic turn-on time is negligible (turn-on is dominated by LS+LD)
–––
170
210
670
1050 1570
7.3
1.5
250
320
1000
V
ns
Q
rr
Reverse Recovery Charge
I
RRM
t
on
Reverse Recovery Current
Forward Turn-On Time
11
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