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參數資料
| 型號： | IRFP3415 |
| 廠商： | International Rectifier |
| 英文描述： | Power MOSFET(Vdss=150V, Rds(on)=0.042ohm, Id=43A) |
| 中文描述： | 功率MOSFET（減振鋼板基本\u003d 150伏，的Rds（on）\u003d 0.042ohm，身份證\u003d 43A章） |
| 文件頁數： | 1/8頁 |
| 文件大小： | 92K |
| 代理商： | IRFP3415 |
IRFP3415
HEXFET
Power MOSFET
S
D
G
Parameter
Max.
43
30
150
200
1.3
± 20
590
22
20
5.0
Units
I
D
@ T
C
= 25
°
C
I
D
@ T
C
= 100
°
C
I
DM
P
D
@T
C
= 25
°
C
Continuous Drain Current, V
GS
@ 10V
Continuous Drain Current, V
GS
@ 10V
Pulsed Drain Current
Power Dissipation
Linear Derating Factor
Gate-to-Source Voltage
Single Pulse Avalanche Energy
Avalanche Current
Repetitive Avalanche Energy
Peak Diode Recovery dv/dt
Operating Junction and
Storage Temperature Range
Soldering Temperature, for 10 seconds
Mounting torque, 6-32 or M3 srew
A
W
W/
°
C
V
mJ
A
mJ
V/ns
V
GS
E
AS
I
AR
E
AR
dv/dt
T
J
T
STG
-55 to + 175
300 (1.6mm from case )
10 lbf
in (1.1N
m)
°
C
Absolute Maximum Ratings
Parameter
Typ.
–––
0.50
–––
Max.
0.75
–––
62
Units
R
θ
JC
R
θ
CS
R
θ
JA
www.irf.com
Junction-to-Case
Case-to-Sink, Flat, Greased Surface
Junction-to-Ambient
°
C/W
Thermal Resistance
V
DSS
= 150V
R
DS(on)
= 0.042
I
D
= 43A
Advanced Process Technology
Dynamic dv/dt Rating
175
°
C Operating Temperature
Fast Switching
Fully Avalanche Rated
Description
Fifth Generation HEXFET
Power MOSFETs from
International Rectifier utilize advanced processing
techniques to achieve extremely low on-resistance per
silicon area. This benefit, combined with the fast
switching speed and ruggedized device design that
HEXFET power MOSFETs are well known for, provides
the designer with an extremely efficient and reliable
device for use in a wide variety of applications.
8/16/00
The TO-247 package is preferred for commercial-
industrial applications where higher power levels
preclude the use of TO-220 devices. The TO-247 is
similar but superior to the earlier TO-218 package
because of its isolated mounting hole.
1
TO-247AC
PD - 93962
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相關代理商/技術參數 |
參數描述 |
|---|---|
| IRFP3415PBF | 功能描述:MOSFET MOSFT 150V 43A 42mOhm 144.4nCAC RoHS:否 制造商:STMicroelectronics 晶體管極性:N-Channel 汲極/源極擊穿電壓:650 V 閘/源擊穿電壓:25 V 漏極連續電流:130 A 電阻汲極/源極 RDS（導通）:0.014 Ohms 配置:Single 最大工作溫度: 安裝風格:Through Hole 封裝 / 箱體:Max247 封裝:Tube |
| IRFP341R | 制造商:未知廠家 制造商全稱:未知廠家 功能描述:TRANSISTOR | MOSFET | N-CHANNEL | 350V V(BR)DSS | 11A I(D) | TO-247AC |
| IRFP342 | 制造商:未知廠家 制造商全稱:未知廠家 功能描述:TRANSISTOR | MOSFET | N-CHANNEL | 400V V(BR)DSS | 8.4A I(D) | TO-247AC |
| IRFP342R | 制造商:未知廠家 制造商全稱:未知廠家 功能描述:TRANSISTOR | MOSFET | N-CHANNEL | 400V V(BR)DSS | 8.7A I(D) | TO-247AC |
| IRFP343 | 制造商:未知廠家 制造商全稱:未知廠家 功能描述:TRANSISTOR | MOSFET | N-CHANNEL | 350V V(BR)DSS | 8.4A I(D) | TO-247AC |
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