- 您現在的位置：買賣IC網 > PDF目錄377509 > IRFP23N50L (International Rectifier) Power MOSFET(Vdss=500V, Rds(on)=0.190ohm, Id=23A) PDF資料下載
參數資料
| 型號： | IRFP23N50L |
| 廠商： | International Rectifier |
| 英文描述： | Power MOSFET(Vdss=500V, Rds(on)=0.190ohm, Id=23A) |
| 中文描述： | 功率MOSFET（減振鋼板基本\u003d 500V及的Rds（on）\u003d 0.190ohm，身份證\u003d 23A條） |
| 文件頁數： | 1/8頁 |
| 文件大小： | 104K |
| 代理商： | IRFP23N50L |
IRFP23N50L
11/28/01
www.irf.com
1
SMPS MOSFET
HEXFET
Power MOSFET
R
DS(on)
typ. T
rr
typ.
0.190
Switch Mode Power Supply (SMPS)
UninterruptIble Power Supply
High Speed Power Switching
Motor Drive
Benefits
Low Gate Charge Qg results in Simple Drive Requirement
Improved Gate, Avalanche and Dynamicdv/dt Ruggedness
Fully Characterized Capacitance and Avalanche Voltage and
Current
Enhanced Body Diode dv/dt Capability
Applications
Parameter
Max.
23
15
92
370
2.9
± 30
14
Units
I
D
@ T
C
= 25°C
I
D
@ T
C
= 100°C
I
DM
P
D
@T
C
= 25°C
Continuous Drain Current, V
GS
@ 10V
Continuous Drain Current, V
GS
@ 10V
Pulsed Drain Current
Power Dissipation
Linear Derating Factor
Gate-to-Source Voltage
Peak Diode Recovery dv/dt
Operating Junction and
Storage Temperature Range
Soldering Temperature, for 10 seconds
(1.6mm from case )
Mounting torqe, 6-32 or M3 screw
A
W
W/°C
V
V/ns
V
GS
dv/dt
T
J
T
STG
-55 to + 150
300
°C
10 lbfin (1.1Nm)
Absolute Maximum Ratings
TO-247AC
Typical SMPS Topologies
Bridge Converters
All Zero Voltage Switching
S
D
G
Diode Characteristics
A
Symbol
I
S
Parameter
Min. Typ. Max. Units
–––
–––
Conditions
Continuous Source Current
(Body Diode)
Pulsed Source Current
(Body Diode)
Diode Forward Voltage
23
MOSFET symbol
showing the
integral reverse
p-n junction diode.
T
J
= 25
°
C, I
S
= 14A, V
GS
= 0V
T
J
= 25
°
C
T
J
= 125
°
C
T
J
= 25
°
C
T
J
= 125
°
C
I
SM
–––
–––
92
V
SD
–––
–––
–––
–––
–––
–––
–––
170
220
560
980 1500
7.6
Intrinsic turn-on time is negligible (turn-on is dominated by L
S
+L
D
)
1.5
250
330
840
V
I
F
= 23A
di/dt = 100A/μs
nC
nC
A
I
RRM
t
on
Reverse Recovery Current
Forward Turn-On Time
11
t
rr
Reverse Recovery Time
Q
rr
Reverse Recovery Charge
ns
V
DSS
500V
I
D
23A
170ns
PD - 94230
相關PDF資料 |
PDF描述 |
|---|---|
| IRFP240 | Power MOSFET(Vdss=200V, Rds(on)=0.18ohm, Id=20A) |
| IRFP240 | 20A, 200V, 0.180 Ohm, N-Channel Power MOSFET |
| IRFP2410 | 100V,61A,N-Channel HEXFET Power MOSFET(100V,61A,N溝道 HEXFET功率MOS場效應管) |
| IRFP244 | Power MOSFET(Vdss=250V, Rds(on)=0.28ohm, Id=15A) |
| IRFP244 | 15A and 14A, 275V and 250V, 0.28 and 0.34 Ohm, N-Channel Power MOSFETs |
相關代理商/技術參數 |
參數描述 |
|---|---|
| IRFP23N50LPBF | 功能描述:MOSFET N-Chan 500V 23 Amp RoHS:否 制造商:STMicroelectronics 晶體管極性:N-Channel 汲極/源極擊穿電壓:650 V 閘/源擊穿電壓:25 V 漏極連續電流:130 A 電阻汲極/源極 RDS（導通）:0.014 Ohms 配置:Single 最大工作溫度: 安裝風格:Through Hole 封裝 / 箱體:Max247 封裝:Tube |
| IRFP240 | 功能描述:MOSFET N-Chan 200V 20 Amp RoHS:否 制造商:STMicroelectronics 晶體管極性:N-Channel 汲極/源極擊穿電壓:650 V 閘/源擊穿電壓:25 V 漏極連續電流:130 A 電阻汲極/源極 RDS（導通）:0.014 Ohms 配置:Single 最大工作溫度: 安裝風格:Through Hole 封裝 / 箱體:Max247 封裝:Tube |
| IRFP240_R4941 | 功能描述:MOSFET TO-247 RoHS:否 制造商:STMicroelectronics 晶體管極性:N-Channel 汲極/源極擊穿電壓:650 V 閘/源擊穿電壓:25 V 漏極連續電流:130 A 電阻汲極/源極 RDS（導通）:0.014 Ohms 配置:Single 最大工作溫度: 安裝風格:Through Hole 封裝 / 箱體:Max247 封裝:Tube |
| IRFP240A | 制造商:FAIRCHILD 制造商全稱:Fairchild Semiconductor 功能描述:Advanced Power MOSFET |
| IRFP240B | 制造商:Rochester Electronics LLC 功能描述: |
發布緊急采購，3分鐘左右您將得到回復。