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參數(shù)資料
| 型號(hào)： | IRFP2410 |
| 廠商： | International Rectifier |
| 英文描述： | 100V,61A,N-Channel HEXFET Power MOSFET(100V,61A,N溝道 HEXFET功率MOS場(chǎng)效應(yīng)管) |
| 中文描述： | 100V的，第61A，N溝道HEXFET功率MOSFET（100V的，61A條，?溝道的HEXFET功率馬鞍山場(chǎng)效應(yīng)管） |
| 文件頁(yè)數(shù)： | 1/8頁(yè) |
| 文件大小： | 147K |
| 代理商： | IRFP2410 |
IRFP2410
HEXFET
Power MOSFET
Preliminary Data Sheet PD - 9.1251
Revision 0
V
DSS
= 100V
R
DS(on)
= 0.025
I
D
= 61A
Advanced Process Technology
Ultra Low On-Resistance
Dynamic dv/dt Rating
Repetitive Avalanche Rated
175°C Operating Temperature
Fast Switching
Ease of Paralleling
Thermal Resistance
Description
Fourth Generation HEXFETs from International Rectifier utilize advanced
processing techniques to achieve the lowest possible on-resistance per silicon
area. This benefit, combined with the fast switching speed and ruggedized device
design that HEXFET Power MOSFETs are well known for, provides the designer
with an extremely efficient device for use in a wide variety of applications.
Parameter
Min.
––––
––––
––––
Typ.
––––
0.24
––––
Max.
0.65
––––
40
Units
R
θ
JC
R
θ
CS
R
θ
JA
Junction-to-Case
Case-to-Sink, Flat, Greased Surface
Junction-to-Ambient
°C/W
The TO-247 package is preferred for commercial-industrial applications where
higher power levels preclude the use of TO-220 devices. The TO-247 is similar
but superior to the earlier TO-218 package because of its isolated mounting hole.
It also provides greater creepage distance between pins to meet the requirements
of most safety specifications.
Absolute Maximum Ratings
Parameter
Max.
61
43
240
230
1.5
±20
830
37
23
5.5
Units
I
D
@ T
C
= 25°C
I
D
@ T
C
= 100°C
I
DM
P
D
@T
C
= 25°C
Continuous Drain Current, V
GS
@ 10V
Continuous Drain Current, V
GS
@ 10V
Pulsed Drain Current
Power Dissipation
Linear Derating Factor
Gate-to-Source Voltage
Single Pulse Avalanche Energy
Avalanche Current
Repetitive Avalanche Energy
Peak Diode Recovery dv/dt
Operating Junction and
Storage Temperature Range
Soldering Temperature, for 10 seconds
Mounting torque, 6-32 or M3 screw.
A
W
W/°C
V
mJ
A
mJ
V/ns
V
GS
E
AS
I
AR
E
AR
dv/dt
T
J
T
STG
-55 to + 175
°C
300 (1.6mm from case)
10 lbfin (1.1Nm)
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相關(guān)代理商/技術(shù)參數(shù) |
參數(shù)描述 |
|---|---|
| IRFP241R | 制造商:未知廠家 制造商全稱:未知廠家 功能描述:TRANSISTOR | MOSFET | N-CHANNEL | 150V V(BR)DSS | 20A I(D) | TO-247 |
| IRFP242 | 制造商:未知廠家 制造商全稱:未知廠家 功能描述:TRANSISTOR | MOSFET | N-CHANNEL | 200V V(BR)DSS | 17A I(D) | TO-247AC |
| IRFP242R | 制造商:Rochester Electronics LLC 功能描述:- Bulk |
| IRFP243 | 制造商:Rochester Electronics LLC 功能描述:- Bulk |
| IRFP243R | 制造商:未知廠家 制造商全稱:未知廠家 功能描述:TRANSISTOR | MOSFET | N-CHANNEL | 150V V(BR)DSS | 20A I(D) | TO-247 |
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