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參數(shù)資料
| 型號： | IRFP260 |
| 廠商： | International Rectifier |
| 英文描述： | Power MOSFET(Vdss=200V, Rds(on)=0.04ohm, Id=50A) |
| 中文描述： | 功率MOSFET（減振鋼板基本\u003d 200V的電壓，的Rds（on）\u003d 0.04ohm，身份證\u003d 50A條） |
| 文件頁數(shù)： | 1/8頁 |
| 文件大小： | 122K |
| 代理商： | IRFP260 |
IRFP260N
HEXFET
Power MOSFET
10/11/00
Parameter
Max.
50
35
200
300
2.0
±20
560
50
30
10
Units
I
D
@ T
C
= 25°C
I
D
@ T
C
= 100°C
I
DM
P
D
@T
C
= 25°C
Continuous Drain Current, V
GS
@ 10V
Continuous Drain Current, V
GS
@ 10V
Pulsed Drain Current
Power Dissipation
Linear Derating Factor
Gate-to-Source Voltage
Single Pulse Avalanche Energy
Avalanche Current
Repetitive Avalanche Energy
Peak Diode Recovery dv/dt
Operating Junction and
Storage Temperature Range
Soldering Temperature, for 10 seconds
Mounting torque, 6-32 or M3 srew
A
W
W/°C
V
mJ
A
mJ
V/ns
V
GS
E
AS
I
AR
E
AR
dv/dt
T
J
T
STG
-55 to +175
300 (1.6mm from case )
10 lbfin (1.1Nm)
°C
Absolute Maximum Ratings
Parameter
Typ.
–––
0.24
–––
Max.
0.50
–––
40
Units
R
θ
JC
R
θ
CS
R
θ
JA
www.irf.com
Junction-to-Case
Case-to-Sink, Flat, Greased Surface
Junction-to-Ambient
°C/W
Thermal Resistance
1
Fifth Generation HEXFETs from International Rectifier utilize advanced processing
techniques to achieve extremely low on-resistance per silicon area. This benefit,
combined with the fast switching speed and ruggedized device design that
HEXFET Power MOSFETs are well known for, provides the designer with an
extremely efficient and reliable device for use in a wide variety of applications.
The TO-247 package is preferred for commercial-industrial applications where
higher power levels preclude the use of TO-220 devices. The TO-247 is similar
but superior to the earlier TO-218 package because of its isolated mounting hole.
Description
V
DSS
= 200V
R
DS(on)
= 0.04
I
D
= 50A
S
D
G
l
Advanced Process Technology
l
Dynamic dv/dt Rating
l
175°C Operating Temperature
l
Fast Switching
l
Fully Avalanche Rated
l
Ease of Paralleling
l
Simple Drive Requirements
TO-247AC
PD - 94004A
相關PDF資料 |
PDF描述 |
|---|---|
| IRFP260 | Standard Power MOSFET - N-Channel Enhancement Mode |
| IRFP260N | N-Channel HEXFET Power MOSFET(N溝道 HEXFET 功率MOS場效應管) |
| IRFP264N | Power MOSFET(Vdss=250V, Rds(on)=60mohm, Id=44A) |
| IRFP264 | Power MOSFET(Vdss=250V, Rds(on)=0.075ohm, Id=38A) |
| IRFP27N60K | Power MOSFET(Vdss=600V, Rds(on)typ.=180mohm, Id=27A) |
相關代理商/技術參數(shù) |
參數(shù)描述 |
|---|---|
| IRFP260MPBF | 功能描述:MOSFET MOSFT 200V 49A 40mOhm 156nCAC RoHS:否 制造商:STMicroelectronics 晶體管極性:N-Channel 汲極/源極擊穿電壓:650 V 閘/源擊穿電壓:25 V 漏極連續(xù)電流:130 A 電阻汲極/源極 RDS（導通）:0.014 Ohms 配置:Single 最大工作溫度: 安裝風格:Through Hole 封裝 / 箱體:Max247 封裝:Tube |
| IRFP260N | 制造商:International Rectifier 功能描述:MOSFET N TO-247 |
| IRFP260NHR | 制造商:International Rectifier 功能描述:Trans MOSFET N-CH 200V 50A 3-Pin(3+Tab) TO-247AC 制造商:International Rectifier 功能描述:TRANS MOSFET N-CH 200V 50A 3PIN TO-247AC - Rail/Tube |
| IRFP260NPBF | 功能描述:MOSFET MOSFT 200V 49A 40mOhm 156nCAC RoHS:否 制造商:STMicroelectronics 晶體管極性:N-Channel 汲極/源極擊穿電壓:650 V 閘/源擊穿電壓:25 V 漏極連續(xù)電流:130 A 電阻汲極/源極 RDS（導通）:0.014 Ohms 配置:Single 最大工作溫度: 安裝風格:Through Hole 封裝 / 箱體:Max247 封裝:Tube |
| IRFP260PBF | 功能描述:MOSFET N-Chan 200V 46 Amp RoHS:否 制造商:STMicroelectronics 晶體管極性:N-Channel 汲極/源極擊穿電壓:650 V 閘/源擊穿電壓:25 V 漏極連續(xù)電流:130 A 電阻汲極/源極 RDS（導通）:0.014 Ohms 配置:Single 最大工作溫度: 安裝風格:Through Hole 封裝 / 箱體:Max247 封裝:Tube |
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