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參數(shù)資料
| 型號： | IRFP460P |
| 廠商： | International Rectifier |
| 英文描述： | Power MOSFET(Vdss=500V, Rds(on)=0.27ohm, Id=20A) |
| 中文描述： | 功率MOSFET（減振鋼板基本\u003d 500V及的Rds（on）\u003d 0.27ohm，身份證\u003d 20A條） |
| 文件頁數(shù)： | 1/8頁 |
| 文件大?。?/td> | 174K |
| 代理商： | IRFP460P |
IRFP460P
HEXFET
Power MOSFET
Third Generation HEXFET
s from International Rectifier
provide the designer with the best combination of fast
switching, ruggedized device design, low on-resistance
and cost-effectiveness.
The TO-247 package is preferred for commercial-industrial
applications where higher power levels preclude the use
of TO-220 devices. The TO-247 is similar but superior to
the earlier TO-218 package because of its isolated
mounting hole. It also provides greater creepage distance
between pins to meet the requirements of most safety
specifications.
The solder plated version of the TO-247 allows the reflow
soldering of the package heatsink to a substrate material.
Absolute Maximum Ratings
S
D
G
V
DSS
= 500V
R
DS(on)
= 0.27
I
D
= 20A
Dynamic dv/dt Rating
Repetitive Avalanche Rated
Isolated Central Mounting Hole
Fast Switching
Ease of Paralleling
Simple Drive Requirements
Solder Plated for Reflowing
Description
Parameter
Max.
20
13
80
280
2.2
± 20
960
20
28
3.5
Units
I
D
@ T
C
= 25
°
C
I
D
@ T
C
= 100
°
C
I
DM
P
D
@T
C
= 25
°
C
Continuous Drain Current, V
GS
@ 10V
Continuous Drain Current, V
GS
@ 10V
Pulsed Drain Current
Power Dissipation
Linear Derating Factor
Gate-to-Source Voltage
Single Pulse Avalanche Energy
Avalanche Current
Repetitive Avalanche Energy
Peak Diode Recovery dv/dt
Operating Junction and
Storage Temperature Range
Soldering Temperature, for 10 seconds
Mounting torque, 6-32 or M3 srew
A
W
W/
°
C
V
mJ
A
mJ
V/ns
V
GS
E
AS
I
AR
E
AR
dv/dt
T
J
T
STG
-55 to + 150
300 (1.6mm from case )
10 lbf
in (1.1N
m)
°
C
Parameter
Typ.
–––
0.24
–––
Max.
0.45
–––
40
Units
R
θ
JC
R
θ
CS
R
θ
JA
www.irf.com
Junction-to-Case
Case-to-Sink, Flat, Greased Surface
Junction-to-Ambient
°
C/W
Thermal Resistance
01/17/01
1
Maximum Reflow Temperature 230 (Time above 183
°
C
should not exceed 100s)
°
C
TO-247AC
PD-93946A
相關PDF資料 |
PDF描述 |
|---|---|
| IRFP460 | N-Channel Enhancement Mode MegaMOS Power MOSFET(最大漏源擊穿電壓500V,導通電阻0.27Ω的N溝道增強型MegaMOS功率MOSFET) |
| IRFP4710 | Power MOSFET(Vdss=100V, Rds(on)max=0.014ohm, Id=72A) |
| IRFPE30 | Power MOSFET(Vdss=800V, Rds(on)=3.0ohm, Id=4.1A) |
| IRFPE40 | Power MOSFET(Vdss=800V, Rds(on)=2.0ohm, Id=5.4A) |
| IRFPE50 | Power MOSFET(Vdss=800V, Rds(on)=1.2ohm, Id=7.8A) |
相關代理商/技術參數(shù) |
參數(shù)描述 |
|---|---|
| IRFP460PBF | 功能描述:MOSFET N-Chan 500V 20 Amp RoHS:否 制造商:STMicroelectronics 晶體管極性:N-Channel 汲極/源極擊穿電壓:650 V 閘/源擊穿電壓:25 V 漏極連續(xù)電流:130 A 電阻汲極/源極 RDS（導通）:0.014 Ohms 配置:Single 最大工作溫度: 安裝風格:Through Hole 封裝 / 箱體:Max247 封裝:Tube |
| IRFP460PBF | 制造商:International Rectifier 功能描述:MOSFET |
| IRFP460PPBF | 功能描述:MOSFET N-Chan 500V 20 Amp RoHS:否 制造商:STMicroelectronics 晶體管極性:N-Channel 汲極/源極擊穿電壓:650 V 閘/源擊穿電壓:25 V 漏極連續(xù)電流:130 A 電阻汲極/源極 RDS（導通）:0.014 Ohms 配置:Single 最大工作溫度: 安裝風格:Through Hole 封裝 / 箱體:Max247 封裝:Tube |
| IRFP462 | 制造商:Rochester Electronics LLC 功能描述:- Bulk |
| IRFP4668PBF | 功能描述:MOSFET MOSFT 200V 130A 2.6mOhm 161nC Qg RoHS:否 制造商:STMicroelectronics 晶體管極性:N-Channel 汲極/源極擊穿電壓:650 V 閘/源擊穿電壓:25 V 漏極連續(xù)電流:130 A 電阻汲極/源極 RDS（導通）:0.014 Ohms 配置:Single 最大工作溫度: 安裝風格:Through Hole 封裝 / 箱體:Max247 封裝:Tube |
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