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參數(shù)資料
| 型號(hào)： | IRFPS38N60L |
| 廠商： | International Rectifier |
| 英文描述： | SMPS MOSFET |
| 中文描述： | MOSFET的開(kāi)關(guān)電源 |
| 文件頁(yè)數(shù)： | 1/9頁(yè) |
| 文件大小： | 175K |
| 代理商： | IRFPS38N60L |
IRFPS38N60L
SMPS MOSFET
HEXFET Power MOSFET
V
DSS
R
DS(on)
typ.
Trr
typ.
600V
120m
Features and Benefits
!
"
02/12/03
www.irf.com
1
S
D
G
Applications
#$
%$
&$
#'
SUPER TO-247AC
Absolute Maximum Ratings
Parameter
Max.
38
24
150
540
Units
I
D
@ T
C
= 25°C
I
D
@ T
C
= 100°C Continuous Drain Current, V
GS
@ 10V
I
DM
Pulsed Drain Current
P
D
@T
C
= 25°C
Power Dissipation
Continuous Drain Current, V
GS
@ 10V
A
W
Linear Derating Factor
Gate-to-Source Voltage
4.3
±30
W/°C
V
V
GS
dv/dt
T
J
T
STG
Peak Diode Recovery dv/dt
Operating Junction and
Storage Temperature Range
13
V/ns
-55 to + 150
°C
Soldering Temperature, for 10 seconds
Mounting torque, 6-32 or M3 screw
Diode Characteristics
Symbol
Parameter
I
S
Continuous Source Current
300 (1.6mm from case )
1.1(10)
Nm (lbfin)
Min. Typ. Max. Units
–––
–––
Conditions
MOSFET symbol
38
(Body Diode)
Pulsed Source Current
(Body Diode)
Diode Forward Voltage
Reverse Recovery Time
A
showing the
integral reverse
I
SM
–––
–––
150
p-n junction diode.
T
J
= 25°C, I
S
= 38A, V
GS
= 0V
T
J
= 25°C, I
F
= 38A
T
J
= 125°C, di/dt = 100A/μs
T
J
= 25°C, I
S
= 38A, V
GS
= 0V
T
J
= 125°C, di/dt = 100A/μs
T
J
= 25°C
V
SD
t
rr
–––
–––
–––
–––
–––
–––
Intrinsic turn-on time is negligible (turn-on is dominated by LS+LD)
–––
170
420
830
2600 3900
9.1
1.5
250
630
1240
V
ns
Q
rr
Reverse Recovery Charge
nC
I
RRM
t
on
Reverse Recovery Current
Forward Turn-On Time
14
A
I
D
38A
170ns
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| IRFPS38N60LPBF | 功能描述:MOSFET N-Chan 600V 38 Amp RoHS:否 制造商:STMicroelectronics 晶體管極性:N-Channel 汲極/源極擊穿電壓:650 V 閘/源擊穿電壓:25 V 漏極連續(xù)電流:130 A 電阻汲極/源極 RDS（導(dǎo)通）:0.014 Ohms 配置:Single 最大工作溫度: 安裝風(fēng)格:Through Hole 封裝 / 箱體:Max247 封裝:Tube |
| IRFPS40N50L | 功能描述:MOSFET N-Chan 500V 46 Amp RoHS:否 制造商:STMicroelectronics 晶體管極性:N-Channel 汲極/源極擊穿電壓:650 V 閘/源擊穿電壓:25 V 漏極連續(xù)電流:130 A 電阻汲極/源極 RDS（導(dǎo)通）:0.014 Ohms 配置:Single 最大工作溫度: 安裝風(fēng)格:Through Hole 封裝 / 箱體:Max247 封裝:Tube |
| IRFPS40N50LPBF | 功能描述:MOSFET N-Chan 500V 46 Amp RoHS:否 制造商:STMicroelectronics 晶體管極性:N-Channel 汲極/源極擊穿電壓:650 V 閘/源擊穿電壓:25 V 漏極連續(xù)電流:130 A 電阻汲極/源極 RDS（導(dǎo)通）:0.014 Ohms 配置:Single 最大工作溫度: 安裝風(fēng)格:Through Hole 封裝 / 箱體:Max247 封裝:Tube |
| IRFPS40N60K | 功能描述:MOSFET N-Chan 600V 40 Amp RoHS:否 制造商:STMicroelectronics 晶體管極性:N-Channel 汲極/源極擊穿電壓:650 V 閘/源擊穿電壓:25 V 漏極連續(xù)電流:130 A 電阻汲極/源極 RDS（導(dǎo)通）:0.014 Ohms 配置:Single 最大工作溫度: 安裝風(fēng)格:Through Hole 封裝 / 箱體:Max247 封裝:Tube |
| IRFPS40N60KPBF | 功能描述:MOSFET N-Chan 600V 40 Amp RoHS:否 制造商:STMicroelectronics 晶體管極性:N-Channel 汲極/源極擊穿電壓:650 V 閘/源擊穿電壓:25 V 漏極連續(xù)電流:130 A 電阻汲極/源極 RDS（導(dǎo)通）:0.014 Ohms 配置:Single 最大工作溫度: 安裝風(fēng)格:Through Hole 封裝 / 箱體:Max247 封裝:Tube |
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