- 您現在的位置：買賣IC網 > PDF目錄377510 > IRFPS43N50K (International Rectifier) SMPS MOSFET(開關模式電源MOS場效應管) PDF資料下載
參數資料
| 型號： | IRFPS43N50K |
| 廠商： | International Rectifier |
| 英文描述： | SMPS MOSFET(開關模式電源MOS場效應管) |
| 中文描述： | MOSFET的開關電源（開關模式電源馬鞍山場效應管） |
| 文件頁數： | 1/3頁 |
| 文件大?。?/td> | 43K |
| 代理商： | IRFPS43N50K |
IRFPS43N50K
6/2/00
www.irf.com
1
PD- 93922
SMPS MOSFET
HEXFET
Power MOSFET
R
DS(on)
typ.
0.073
Telecom and Data-Com off-Line SMPS
UninterruptIble Power Supply
Benefits
Low On-Resistance
High Speed Switching
Low Gate Drive Current Due to Improved
Gate Charge Characteristics
Improved Avalanche Ruggedness and
Dynamic dv/dt, Fully Characterized
Avalanche Voltage and Current
Applications
V
DSS
500V
I
D
43A
Parameter
Max.
43
27
170
450
3.6
± 30
19
Units
I
D
@ T
C
= 25
°
C
I
D
@ T
C
= 100
°
C
I
DM
P
D
@T
C
= 25
°
C
Continuous Drain Current, V
GS
@ 10V
Continuous Drain Current, V
GS
@ 10V
Pulsed Drain Current
Power Dissipation
Linear Derating Factor
Gate-to-Source Voltage
Peak Diode Recovery dv/dt
Operating Junction and
Storage Temperature Range
Soldering Temperature, for 10 seconds
(1.6mm from case )
A
W
W/
°
C
V
V/ns
V
GS
dv/dt
T
J
T
STG
-55 to + 150
300
°
C
Absolute Maximum Ratings
Symbol
I
S
Parameter
Min. Typ. Max. Units
Conditions
Continuous Source Current
(Body Diode)
Pulsed Source Current
(Body Diode)
Diode Forward Voltage
Reverse Recovery Time
Reverse RecoveryCharge
Reverse RecoveryCurrent
Forward Turn-On Time
MOSFET symbol
showing the
integral reverse
p-n junction diode.
T
J
= 25
°
C, I
S
= 43A, V
GS
= 0V
T
J
= 125
°
C, I
F
= 43A
di/dt = 100A/μs
–––
–––
I
SM
–––
–––
V
SD
t
rr
Q
rr
I
RRM
t
on
–––
–––
–––
–––
–––
680
15
41
1.5
–––
–––
–––
V
ns
μC
A
Intrinsic turn-on time is negligible (turn-on is dominated by L
S
+L
D
)
S
D
G
Diode Characteristics
43
170
A
Typical SMPS Topologies
Hard Switching Full and Half Bridge Circuits
Hard Switching Single Transistor Circuits
Power Factor Correction Circuits
PROVISIONAL
Super
-
247
相關PDF資料 |
PDF描述 |
|---|---|
| IRFPS43N50 | Power MOSFET(Vdss=500V, Rds(on)typ.=0.078ohm, Id=47A) |
| IRFPS60N50C | SMPS MOSFET(開關模式電源MOS場效應管) |
| IRFR220N | Power MOSFET(Vdss=200V, Rds(on)max=600mohm, Id=5.0A) |
| IRFU220N | Power MOSFET(Vdss=200V, Rds(on)max=600mohm, Id=5.0A) |
| IRFR220NTR | TRANSISTOR | MOSFET | N-CHANNEL | 200V V(BR)DSS | 5A I(D) | TO-252AA |
相關代理商/技術參數 |
參數描述 |
|---|---|
| IRFPS43N50KPBF | 功能描述:MOSFET N-Chan 500V 47 Amp RoHS:否 制造商:STMicroelectronics 晶體管極性:N-Channel 汲極/源極擊穿電壓:650 V 閘/源擊穿電壓:25 V 漏極連續電流:130 A 電阻汲極/源極 RDS（導通）:0.014 Ohms 配置:Single 最大工作溫度: 安裝風格:Through Hole 封裝 / 箱體:Max247 封裝:Tube |
| IRFPS59N60C | 制造商:IRF 制造商全稱:International Rectifier 功能描述:SMPS MOSFET |
| IRFPS60N50C | 制造商:IRF 制造商全稱:International Rectifier 功能描述:HEXFET Power MOSFET |
| IRFQ110 | 制造商:SEME-LAB 制造商全稱:Seme LAB 功能描述:QUAD N-CHANNEL ENHANCEMENT MOSFETS |
| IRFR | 制造商:IRF 制造商全稱:International Rectifier 功能描述:Power MOSFET(Vdss=100V, Rds(on)=0.21ohm, Id=9.4A) |
發布緊急采購，3分鐘左右您將得到回復。