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參數(shù)資料
| 型號： | IRFR110 |
| 廠商： | HARRIS SEMICONDUCTOR |
| 元件分類： | JFETs |
| 英文描述： | 4.7A, 100V, 0.540 Ohm, N-Channel Power MOSFETs |
| 中文描述： | 4.7 A, 100 V, 0.54 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-252AA |
| 文件頁數(shù)： | 1/7頁 |
| 文件大小： | 60K |
| 代理商： | IRFR110 |
4-371
CAUTION: These devices are sensitive to electrostatic discharge; follow proper ESD Handling Procedures.
http://www.intersil.com or 407-727-9207
|
Copyright
Intersil Corporation 1999
IRFR110, IRFU110
4.7A, 100V 0.540 Ohm, N-Channel Power
MOSFETs
These are N-Channel enhancement mode silicon gate
power field effect transistors designed, tested, and
guaranteed to withstand a specified level of energy in the
breakdown avalanche mode of operation. These advanced
power MOSFETs are designed for use in applications such
as switching regulators, switching converters, motor drivers,
relay drivers and drivers for high-power bipolar switching
transistors requiring high speed and low gate-drive power.
These transistors can be operated directly from integrated
circuits.
Formerly developmental type TA17441.
Features
4.7A, 100V
r
DS(ON)
= 0.540
Single Pulse Avalanche Energy Rated
SOA is Power Dissipation Limited
Nanosecond Switching Speeds
Linear Transfer Characteristics
High Input Impedance
175
o
C Operating Temperature
Related Literature
- TB334 “Guidelines for Soldering Surface Mount
Components to PC Boards”
Symbol
Packaging
Ordering Information
PART NUMBER
PACKAGE
BRAND
IRFU110
TO-251AA
IFU110
IRFR110
TO-252AA
IFR110
NOTE: When ordering, use the entire part number.
G
D
S
JEDEC TO-251AA
JEDEC TO-252AA
GATE
SOURCE
DRAIN
DRAIN (FLANGE)
DRAIN (FLANGE)
GATE
SOURCE
Data Sheet
July 1999
File Number
3275.3
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| IRFU13N15D | Power MOSFET(Vdss=150V, Rds(on)max=0.18ohm, Id=14A) |
| IRFR13N15D | Power MOSFET(Vdss=150V, Rds(on)max=0.18ohm, Id=14A) |
| IRFU13N20D | Power MOSFET(Vdss=200V, Rds(on)max=0.235ohm, Id=13A) |
相關(guān)代理商/技術(shù)參數(shù) |
參數(shù)描述 |
|---|---|
| IRFR110_R4941 | 功能描述:MOSFET TO-252AA RoHS:否 制造商:STMicroelectronics 晶體管極性:N-Channel 汲極/源極擊穿電壓:650 V 閘/源擊穿電壓:25 V 漏極連續(xù)電流:130 A 電阻汲極/源極 RDS（導(dǎo)通）:0.014 Ohms 配置:Single 最大工作溫度: 安裝風格:Through Hole 封裝 / 箱體:Max247 封裝:Tube |
| IRFR1109A | 制造商:Rochester Electronics LLC 功能描述:- Bulk |
| IRFR110A | 制造商:FAIRCHILD 制造商全稱:Fairchild Semiconductor 功能描述:Advanced Power MOSFET |
| IRFR110ATF | 功能描述:MOSFET 100V N-Channel A-FET RoHS:否 制造商:STMicroelectronics 晶體管極性:N-Channel 汲極/源極擊穿電壓:650 V 閘/源擊穿電壓:25 V 漏極連續(xù)電流:130 A 電阻汲極/源極 RDS（導(dǎo)通）:0.014 Ohms 配置:Single 最大工作溫度: 安裝風格:Through Hole 封裝 / 箱體:Max247 封裝:Tube |
| IRFR110ATM | 功能描述:MOSFET 100V N-Channel A-FET RoHS:否 制造商:STMicroelectronics 晶體管極性:N-Channel 汲極/源極擊穿電壓:650 V 閘/源擊穿電壓:25 V 漏極連續(xù)電流:130 A 電阻汲極/源極 RDS（導(dǎo)通）:0.014 Ohms 配置:Single 最大工作溫度: 安裝風格:Through Hole 封裝 / 箱體:Max247 封裝:Tube |
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