- 您現在的位置：買賣IC網 > PDF目錄384499 > IRFR120N (International Rectifier) HEXFET Power MOSFET PDF資料下載
參數資料
| 型號： | IRFR120N |
| 廠商： | International Rectifier |
| 英文描述： | HEXFET Power MOSFET |
| 中文描述： | HEXFET功率MOSFET |
| 文件頁數： | 1/10頁 |
| 文件大小： | 152K |
| 代理商： | IRFR120N |
IRFR/U120N
HEXFET
Power MOSFET
S
D
G
V
DSS
= 100V
R
DS(on)
= 0.21
I
D
= 9.4A
Description
Fifth Generation HEXFETs from International Rectifier
utilize advanced processing techniques to achieve the
lowest possible on-resistance per silicon area. This
benefit, combined with the fast switching speed and
ruggedized device design that HEXFET Power
MOSFETs are well known for, provides the designer
with an extremely efficient device for use in a wide
variety of applications.
5/11/98
Parameter
Max.
9.4
6.6
38
48
0.32
± 20
91
5.7
4.8
5.0
Units
I
D
@ T
C
= 25°C
I
D
@ T
C
= 100°C
I
DM
P
D
@T
C
= 25°C
Continuous Drain Current, V
GS
@ 10V
Continuous Drain Current, V
GS
@ 10V
Pulsed Drain Current
Power Dissipation
Linear Derating Factor
Gate-to-Source Voltage
Single Pulse Avalanche Energy
Avalanche Current
Repetitive Avalanche Energy
Peak Diode Recovery dv/dt
Operating Junction and
Storage Temperature Range
Soldering Temperature, for 10 seconds
A
W
W/°C
V
mJ
A
mJ
V/ns
V
GS
E
AS
I
AR
E
AR
dv/dt
T
J
T
STG
-55 to + 175
300 (1.6mm from case )
°C
Absolute Maximum Ratings
Parameter
Typ.
–––
–––
–––
Max.
3.1
50
110
Units
R
θ
JC
R
θ
JA
R
θ
JA
www.irf.com
Junction-to-Case
Junction-to-Ambient (PCB mount) **
Junction-to-Ambient
°C/W
Thermal Resistance
D-PAK
TO-252AA
I-PAK
TO-251AA
l
Surface Mount (IRFR120N)
l
Straight Lead (IRFU120N)
l
Advanced Process Technology
l
Fast Switching
l
Fully Avalanche Rated
The D-PAK is designed for surface mounting using
vapor phase, infrared, or wave soldering techniques.
The straight lead version (IRFU series) is for through-
hole mounting applications. Power dissipation levels
up to 1.5 watts are possible in typical surface mount
applications.
PD - 91365B
1
相關PDF資料 |
PDF描述 |
|---|---|
| IRFU13N15D | Power MOSFET(Vdss=150V, Rds(on)max=0.18ohm, Id=14A) |
| IRFR13N15D | Power MOSFET(Vdss=150V, Rds(on)max=0.18ohm, Id=14A) |
| IRFU13N20D | Power MOSFET(Vdss=200V, Rds(on)max=0.235ohm, Id=13A) |
| IRFR13N20 | Power MOSFET(Vdss=200V, Rds(on)max=0.235ohm, Id=13A) |
| IRFR13N20D | Power MOSFET(Vdss=200V, Rds(on)max=0.235ohm, Id=13A) |
相關代理商/技術參數 |
參數描述 |
|---|---|
| IRFR120NCPBF | 功能描述:MOSFET N-CH 100V 9.4A DPAK RoHS:是 類別:分離式半導體產品 >> FET - 單 系列:HEXFET® 標準包裝:1,000 系列:MESH OVERLAY™ FET 型:MOSFET N 通道，金屬氧化物 FET 特點:邏輯電平門 漏極至源極電壓(Vdss):200V 電流 - 連續漏極(Id) @ 25° C:18A 開態Rds（最大）@ Id, Vgs @ 25° C:180 毫歐 @ 9A，10V Id 時的 Vgs(th)（最大）:4V @ 250µA 閘電荷(Qg) @ Vgs:72nC @ 10V 輸入電容 (Ciss) @ Vds:1560pF @ 25V 功率 - 最大:40W 安裝類型:通孔 封裝/外殼:TO-220-3 整包 供應商設備封裝:TO-220FP 包裝:管件 |
| IRFR120NCTRLPBF | 功能描述:MOSFET N-CH 100V 9.4A DPAK RoHS:是 類別:分離式半導體產品 >> FET - 單 系列:HEXFET® 標準包裝:1,000 系列:MESH OVERLAY™ FET 型:MOSFET N 通道，金屬氧化物 FET 特點:邏輯電平門 漏極至源極電壓(Vdss):200V 電流 - 連續漏極(Id) @ 25° C:18A 開態Rds（最大）@ Id, Vgs @ 25° C:180 毫歐 @ 9A，10V Id 時的 Vgs(th)（最大）:4V @ 250µA 閘電荷(Qg) @ Vgs:72nC @ 10V 輸入電容 (Ciss) @ Vds:1560pF @ 25V 功率 - 最大:40W 安裝類型:通孔 封裝/外殼:TO-220-3 整包 供應商設備封裝:TO-220FP 包裝:管件 |
| IRFR120NHR | 制造商:International Rectifier 功能描述:Trans MOSFET N-CH 100V 9.4A 3-Pin(2+Tab) DPAK |
| IRFR120NPBF | 功能描述:MOSFET 100V 1 N-CH HEXFET PWR MOSFET 210mOhms RoHS:否 制造商:STMicroelectronics 晶體管極性:N-Channel 汲極/源極擊穿電壓:650 V 閘/源擊穿電壓:25 V 漏極連續電流:130 A 電阻汲極/源極 RDS（導通）:0.014 Ohms 配置:Single 最大工作溫度: 安裝風格:Through Hole 封裝 / 箱體:Max247 封裝:Tube |
| IRFR120NTPBF | 制造商: 功能描述: 制造商:undefined 功能描述: |
發布緊急采購，3分鐘左右您將得到回復。