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參數資料
| 型號： | IRFR15N20D |
| 廠商： | International Rectifier |
| 英文描述： | SMPS MOSFET |
| 中文描述： | MOSFET的開關電源 |
| 文件頁數： | 1/10頁 |
| 文件大小： | 239K |
| 代理商： | IRFR15N20D |
www.irf.com
1
7/25/01
IRFR15N20D
IRFU15N20D
SMPS MOSFET
HEXFET
Power MOSFET
V
DSS
200V
R
DS(on)
max
0.165
I
D
17A
Parameter
Max.
17
12
68
140
3.0
0.96
± 30
8.3
Units
I
D
@ T
C
= 25°C
I
D
@ T
C
= 100°C
I
DM
P
D
@T
C
= 25°C
P
D
@T
A
= 25°C
Continuous Drain Current, V
GS
@ 10V
Continuous Drain Current, V
GS
@ 10V
Pulsed Drain Current
Power Dissipation
Power Dissipation*
Linear Derating Factor
Gate-to-Source Voltage
Peak Diode Recovery dv/dt
Operating Junction and
Storage Temperature Range
Soldering Temperature, for 10 seconds
A
W
W/°C
V
V/ns
V
GS
dv/dt
T
J
T
STG
-55 to + 175
300 (1.6mm from case )
°C
Absolute Maximum Ratings
Notes
through
are on page 10
D-Pak
IRFR15N20D
I-Pak
IRFU15N20D
PD - 94245
l
High frequency DC-DC converters
Benefits
l
Low Gate-to-Drain Charge to Reduce
Switching Losses
l
Fully Characterized Capacitance Including
Effective C
OSS
to Simplify Design, (See
App. Note AN1001)
l
Fully Characterized Avalanche Voltage
and Current
Applications
Parameter
Typ.
–––
–––
–––
Max.
1.04
50
110
Units
R
θ
JC
R
θ
JA
R
θ
JA
Junction-to-Case
Junction-to-Ambient (PCB mount)*
Junction-to-Ambient
°C/W
Thermal Resistance
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PDF描述 |
|---|---|
| IRFU15N20D | SMPS MOSFET |
| IRFR18N15 | SMPS MOSFET |
| IRFR18N15D | SMPS MOSFET |
| IRFU18N15D | SMPS MOSFET |
| IRFR1N60A | Power MOSFET(Vdss=600V, Rds(on)max=7.0ohm, Id=1.4A) |
相關代理商/技術參數 |
參數描述 |
|---|---|
| IRFR15N20DHR | 制造商:International Rectifier 功能描述:TRANS MOSFET N-CH 200V 17A 3PIN DPAK - Bulk |
| IRFR15N20DPBF | 功能描述:MOSFET 200V 1 N-CH HEXFET PWR MOSFET 165mOhms RoHS:否 制造商:STMicroelectronics 晶體管極性:N-Channel 汲極/源極擊穿電壓:650 V 閘/源擊穿電壓:25 V 漏極連續電流:130 A 電阻汲極/源極 RDS（導通）:0.014 Ohms 配置:Single 最大工作溫度: 安裝風格:Through Hole 封裝 / 箱體:Max247 封裝:Tube |
| IRFR15N20DTRLHR | 制造商:International Rectifier 功能描述:Trans MOSFET N-CH 200V 17A 3-Pin(2+Tab) DPAK T/R |
| IRFR15N20DTRLP | 功能描述:MOSFET MOSFT 200V 17A 165mOhm 27nC RoHS:否 制造商:STMicroelectronics 晶體管極性:N-Channel 汲極/源極擊穿電壓:650 V 閘/源擊穿電壓:25 V 漏極連續電流:130 A 電阻汲極/源極 RDS（導通）:0.014 Ohms 配置:Single 最大工作溫度: 安裝風格:Through Hole 封裝 / 箱體:Max247 封裝:Tube |
| IRFR15N20DTRPBF | 功能描述:MOSFET 200V 1 N-CH HEXFET PWR MOSFET 165mOhms RoHS:否 制造商:STMicroelectronics 晶體管極性:N-Channel 汲極/源極擊穿電壓:650 V 閘/源擊穿電壓:25 V 漏極連續電流:130 A 電阻汲極/源極 RDS（導通）:0.014 Ohms 配置:Single 最大工作溫度: 安裝風格:Through Hole 封裝 / 箱體:Max247 封裝:Tube |
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