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參數(shù)資料
| 型號(hào)： | IRFR3303TRL |
| 英文描述： | TRANSISTOR | MOSFET | N-CHANNEL | 30V V(BR)DSS | 33A I(D) | TO-252AA |
| 中文描述： | 晶體管| MOSFET的| N溝道| 30V的五（巴西）直|第33A條（?。﹟對(duì)252AA |
| 文件頁數(shù)： | 7/7頁 |
| 文件大小： | 117K |
| 代理商： | IRFR3303TRL |
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相關(guān)PDF資料 |
PDF描述 |
|---|---|
| IRFR3303TRR | TRANSISTOR | MOSFET | N-CHANNEL | 30V V(BR)DSS | 33A I(D) | TO-252AA |
| IRFU320A | TRANSISTOR | MOSFET | N-CHANNEL | 400V V(BR)DSS | 3.1A I(D) | TO-251AA |
| IRFU322 | TRANSISTOR | MOSFET | N-CHANNEL | 400V V(BR)DSS | 2.6A I(D) | TO-251AA |
| IRFR421 | TRANSISTOR | MOSFET | N-CHANNEL | 450V V(BR)DSS | 2.5A I(D) | TO-252AA |
| IRFR422 | TRANSISTOR | MOSFET | N-CHANNEL | 500V V(BR)DSS | 2.2A I(D) | TO-252AA |
相關(guān)代理商/技術(shù)參數(shù) |
參數(shù)描述 |
|---|---|
| IRFR3303TRLHR | 制造商:International Rectifier 功能描述:Trans MOSFET N-CH 30V 33A 3-Pin(2+Tab) DPAK T/R |
| IRFR3303TRLPBF | 功能描述:MOSFET MOSFT 30V 33A 31mOhm 19.3nC RoHS:否 制造商:STMicroelectronics 晶體管極性:N-Channel 汲極/源極擊穿電壓:650 V 閘/源擊穿電壓:25 V 漏極連續(xù)電流:130 A 電阻汲極/源極 RDS（導(dǎo)通）:0.014 Ohms 配置:Single 最大工作溫度: 安裝風(fēng)格:Through Hole 封裝 / 箱體:Max247 封裝:Tube |
| IRFR3303TRPBF | 功能描述:MOSFET 30V 1 N-CH HEXFET 31mOhms 19.3nC RoHS:否 制造商:STMicroelectronics 晶體管極性:N-Channel 汲極/源極擊穿電壓:650 V 閘/源擊穿電壓:25 V 漏極連續(xù)電流:130 A 電阻汲極/源極 RDS（導(dǎo)通）:0.014 Ohms 配置:Single 最大工作溫度: 安裝風(fēng)格:Through Hole 封裝 / 箱體:Max247 封裝:Tube |
| IRFR3303TRR | 功能描述:MOSFET N-CH 30V 33A DPAK RoHS:否 類別:分離式半導(dǎo)體產(chǎn)品 >> FET - 單 系列:HEXFET® 標(biāo)準(zhǔn)包裝:1,000 系列:MESH OVERLAY™ FET 型:MOSFET N 通道，金屬氧化物 FET 特點(diǎn):邏輯電平門 漏極至源極電壓(Vdss):200V 電流 - 連續(xù)漏極(Id) @ 25° C:18A 開態(tài)Rds（最大）@ Id, Vgs @ 25° C:180 毫歐 @ 9A，10V Id 時(shí)的 Vgs(th)（最大）:4V @ 250µA 閘電荷(Qg) @ Vgs:72nC @ 10V 輸入電容 (Ciss) @ Vds:1560pF @ 25V 功率 - 最大:40W 安裝類型:通孔 封裝/外殼:TO-220-3 整包 供應(yīng)商設(shè)備封裝:TO-220FP 包裝:管件 |
| IRFR3303TRRHR | 制造商:International Rectifier 功能描述:MOSFET, 30V, 33A, 31 MOHM, 19.3 NC QG, D-PAK - Tape and Reel |
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