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參數資料
| 型號： | IRFR3411PBF |
| 廠商： | International Rectifier |
| 英文描述： | HEXFET Power MOSFET |
| 中文描述： | HEXFET功率MOSFET |
| 文件頁數： | 1/10頁 |
| 文件大小： | 226K |
| 代理商： | IRFR3411PBF |
IRFR3411PbF
IRFU3411PbF
HEXFET
Power MOSFET
Parameter
Typ.
–––
–––
–––
Max.
1.2
50
110
Units
R
θ
JC
R
θ
JA
R
θ
JA
www.irf.com
Junction-to-Case
Junction-to-Ambient (PCB mount)*
Junction-to-Ambient
°C/W
Thermal Resistance
1
V
DSS
= 100V
R
DS(on)
= 44m
I
D
= 32A
S
D
G
Advanced HEXFET
Power MOSFETs from International
Rectifier utilize advanced processing techniques to
achieve extremely low on-resistance per silicon area.
This benefit, combined with the fast switching speed and
ruggedized device design that HEXFET power MOSFETs
are well known for, provides the designer with an
extremely efficient and reliable device for use in a wide
variety of applications.
The D-Pak is designed for surface mounting using vapor
phase, infrared, or wave soldering techniques. The
straight lead, I-Pak, version (IRFU series) is for through-
hole mounting applications. Power dissipation levels up
to 1.5 watts are possible in typical surface mount
applications.
Advanced Process Technology
Ultra Low On-Resistance
Dynamic dv/dt Rating
175°C Operating Temperature
Fast Switching
Fully Avalanche Rated
Lead-Free
Description
Absolute Maximum Ratings
Parameter
Max.
32
23
110
130
0.83
± 20
16
13
7.0
Units
I
D
@ T
C
= 25°C
I
D
@ T
C
= 100°C
I
DM
P
D
@T
C
= 25°C
Continuous Drain Current, V
GS
@ 10V
Continuous Drain Current, V
GS
@ 10V
Pulsed Drain Current
Power Dissipation
Linear Derating Factor
Gate-to-Source Voltage
Avalanche Current
Repetitive Avalanche Energy
Peak Diode Recovery dv/dt
Operating Junction and
Storage Temperature Range
Soldering Temperature, for 10 seconds
A
W
W/°C
V
A
mJ
V/ns
V
GS
I
AR
E
AR
dv/dt
T
J
T
STG
-55 to + 175
300 (1.6mm from case )
°C
PD - 95371A
D-Pak
IRFR3411
I-Pak
IRFU3411
相關PDF資料 |
PDF描述 |
|---|---|
| IRFU3411PBF | HEXFET Power MOSFET |
| IRFR3412 | SMPS MOSFET |
| IRFU3412 | SMPS MOSFET |
| IRFR3418 | HEXFET Power MOSFET |
| IRFU3418 | HEXFET Power MOSFET |
相關代理商/技術參數 |
參數描述 |
|---|---|
| IRFR3411TRLPBF | 制造商:International Rectifier 功能描述:MOSFET, Power, N-Ch, VDSS 100V, RDS(ON) 36 Milliohms, ID 32A, D-Pak (TO-252AA), -55deg 制造商:International Rectifier 功能描述:TRANS MOSFET N-CH 100V 32A 3PIN DPAK - Tape and Reel 制造商:International Rectifier 功能描述:Single N-Channel 100 V 130 W 48 nC Hexfet Power Mosfet Surface Mount - DPAK |
| IRFR3411TRPBF | 功能描述:MOSFET MOSFT 100V 32A 44mOhm 48nC RoHS:否 制造商:STMicroelectronics 晶體管極性:N-Channel 汲極/源極擊穿電壓:650 V 閘/源擊穿電壓:25 V 漏極連續電流:130 A 電阻汲極/源極 RDS（導通）:0.014 Ohms 配置:Single 最大工作溫度: 安裝風格:Through Hole 封裝 / 箱體:Max247 封裝:Tube |
| IRFR3411TRRHR | 制造商:International Rectifier 功能描述:MOSFET, 100V, 32A, 44 MOHM, 48 NC QG, D-PAK - Tape and Reel |
| IRFR3412 | 制造商:International Rectifier 功能描述:N CHANNEL MOSFET, 100V, 48A, D-PAK, Transistor Polarity:N Channel, Continuous Dr |
| IRFR3412PBF | 功能描述:MOSFET N-CH 100V 48A DPAK RoHS:是 類別:分離式半導體產品 >> FET - 單 系列:HEXFET® 標準包裝:1,000 系列:MESH OVERLAY™ FET 型:MOSFET N 通道，金屬氧化物 FET 特點:邏輯電平門 漏極至源極電壓(Vdss):200V 電流 - 連續漏極(Id) @ 25° C:18A 開態Rds（最大）@ Id, Vgs @ 25° C:180 毫歐 @ 9A，10V Id 時的 Vgs(th)（最大）:4V @ 250µA 閘電荷(Qg) @ Vgs:72nC @ 10V 輸入電容 (Ciss) @ Vds:1560pF @ 25V 功率 - 最大:40W 安裝類型:通孔 封裝/外殼:TO-220-3 整包 供應商設備封裝:TO-220FP 包裝:管件 |
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