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參數資料
| 型號： | IRFR3504PbF |
| 廠商： | International Rectifier |
| 英文描述： | AUTOMOTIVE MOSFET |
| 中文描述： | 汽車MOSFET的 |
| 文件頁數： | 1/11頁 |
| 文件大?。?/td> | 593K |
| 代理商： | IRFR3504PBF |
IRFR3504
IRFU3504
HEXFET
Power MOSFET
Absolute Maximum Ratings
Parameter
Typ.
–––
–––
–––
Max.
1.09
50
110
Units
R
θ
JC
R
θ
JA
R
θ
JA
Junction-to-Case
Junction-to-Ambient (PCB mount)
Junction-to-Ambient
°C/W
Thermal Resistance
V
DSS
= 40V
R
DS(on)
= 9.2m
I
D
= 30A
www.irf.com
1
AUTOMOTIVE MOSFET
HEXFET(R) is a registered trademark of International Rectifier.
Description
Specifically designed for Automotive applications, this HEXFET
Power MOSFET utilizes the latest processing techniques to
achieve extremely low on-resistance per silicon area. Addi-
tional features of this product are a 175°C junction operating
temperature, fast switching speed and improved repetitive
avalanche rating. These features combine to make this design
an extremely efficient and reliable device for use in Automotive
applications and a wide variety of other applications.
The D-Pak is designed for surface mounting using vapor
phase, infrared, or wave soldering techniques. The straight
lead version (IRFU series) is for through-hole mounting
applications. Power dissipation levels up to 1.5 watts are
possible in typical surface mount applications.
S
D
G
Features
Advanced Process Technology
Ultra Low On-Resistance
175°C Operating Temperature
Fast Switching
Repetitive Avalanche Allowed up to Tjmax
●
●
●
●
●
D-Pak
IRFR3504
I-Pak
IRFU3504
Parameter
Max.
Units
I
D
@ T
C
= 25°C
I
D
@ T
C
= 100°C
I
D
@ T
C
= 25°C
I
DM
P
D
@T
C
= 25°C
Continuous Drain Current, V
GS
@ 10V (Silicon limited)
Continuous Drain Current, V
GS
@ 10V (See Fig.9)
Continuous Drain Current, V
GS
@ 10V (Package limited)
Pulsed Drain Current
Power Dissipation
Linear Derating Factor
Gate-to-Source Voltage
Single Pulse Avalanche Energy
Single Pulse Avalanche Energy Tested Value
Avalanche Current
Repetitive Avalanche Energy
Operating Junction and
Storage Temperature Range
Soldering Temperature, for 10 seconds
87
61
30
350
140
0.92
± 20
240
480
A
W
W/°C
V
mJ
V
GS
E
AS
E
AS
(tested)
I
AR
E
AR
T
J
T
STG
See Fig.12a, 12b, 15, 16
A
mJ
-55 to + 175
300 (1.6mm from case )
°C
PD - 94499A
相關PDF資料 |
PDF描述 |
|---|---|
| IRFR3706TR | TRANSISTOR | MOSFET | N-CHANNEL | 20V V(BR)DSS | 75A I(D) | TO-252AA |
| IRFU3706 | Power MOSFET(Vdss=20V, Rds(on)max=9.0mohm, Id=75A) |
| IRFR3706 | Power MOSFET(Vdss=20V, Rds(on)max=9.0mohm, Id=75A) |
| IRFR3706TRL | TRANSISTOR | MOSFET | N-CHANNEL | 20V V(BR)DSS | 75A I(D) | TO-252AA |
| IRFR3706TRR | TRANSISTOR | MOSFET | N-CHANNEL | 20V V(BR)DSS | 75A I(D) | TO-252AA |
相關代理商/技術參數 |
參數描述 |
|---|---|
| IRFR3504TRHR | 制造商:International Rectifier 功能描述:TRANS MOSFET N-CH 40V 87A 3PIN DPAK - Tape and Reel |
| IRFR3504TRLHR | 制造商:International Rectifier 功能描述:MOSFET, 40V, 87A, 9.2 MOHM, 48 NC QG, D-PAK - Tape and Reel |
| IRFR3504TRLPBF | 功能描述:MOSFET N-CH 40V 30A DPAK RoHS:是 類別:分離式半導體產品 >> FET - 單 系列:HEXFET® 標準包裝:1,000 系列:MESH OVERLAY™ FET 型:MOSFET N 通道，金屬氧化物 FET 特點:邏輯電平門 漏極至源極電壓(Vdss):200V 電流 - 連續漏極(Id) @ 25° C:18A 開態Rds（最大）@ Id, Vgs @ 25° C:180 毫歐 @ 9A，10V Id 時的 Vgs(th)（最大）:4V @ 250µA 閘電荷(Qg) @ Vgs:72nC @ 10V 輸入電容 (Ciss) @ Vds:1560pF @ 25V 功率 - 最大:40W 安裝類型:通孔 封裝/外殼:TO-220-3 整包 供應商設備封裝:TO-220FP 包裝:管件 |
| IRFR3504TRPBF | 功能描述:MOSFET MOSFT 40V 87A 9.2mOhm 48nC RoHS:否 制造商:STMicroelectronics 晶體管極性:N-Channel 汲極/源極擊穿電壓:650 V 閘/源擊穿電壓:25 V 漏極連續電流:130 A 電阻汲極/源極 RDS（導通）:0.014 Ohms 配置:Single 最大工作溫度: 安裝風格:Through Hole 封裝 / 箱體:Max247 封裝:Tube |
| IRFR3504TRRHR | 制造商:International Rectifier 功能描述:MOSFET, 40V, 87A, 9.2 MOHM, 48 NC QG, D-PAK - Tape and Reel |
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