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參數(shù)資料
| 型號： | IRFR5305 |
| 廠商： | International Rectifier |
| 英文描述： | -55V,P-Channel HEXFET Power MOSFET(-55V,P溝道 HEXFET功率MOS場效應(yīng)管) |
| 中文描述： | - 55V的P通道HEXFET功率MOSFET（- 55V的，P溝道的HEXFET功率馬鞍山場效應(yīng)管） |
| 文件頁數(shù)： | 1/10頁 |
| 文件大小： | 156K |
| 代理商： | IRFR5305 |
IRFR/U5305
HEXFET
Power MOSFET
Fifth Generation HEXFETs from International Rectifier utilize
advanced processing techniques to achieve extremely low
on-resistance per silicon area. This benefit, combined with
the fast switching speed and ruggedized device design that
HEXFET
Power MOSFETs are well known for, provides
the designer with an extremely efficient and reliable device
for use in a wide variety of applications.
The D-Pak is designed for surface mounting using vapor
phase, infrared, or wave soldering techniques. The straight
lead version (IRFU series) is for through-hole mounting
applications. Power dissipation levels up to 1.5 watts are
possible in typical surface mount applications.
Parameter
Max.
-31
-22
-110
110
0.71
± 20
280
-16
11
-5.0
Units
I
D
@ T
C
= 25°C
I
D
@ T
C
= 100°C
I
DM
P
D
@T
C
= 25°C
Continuous Drain Current, V
GS
@ -10V
Continuous Drain Current, V
GS
@ -10V
Pulsed Drain Current
Power Dissipation
Linear Derating Factor
Gate-to-Source Voltage
Single Pulse Avalanche Energy
Avalanche Current
Repetitive Avalanche Energy
Peak Diode Recovery dv/dt
Operating Junction and
Storage Temperature Range
Soldering Temperature, for 10 seconds
Mounting torque, 6-32 or M3 srew
A
W
W/°C
V
mJ
A
mJ
V/ns
V
GS
E
AS
I
AR
E
AR
dv/dt
T
J
T
STG
-55 to + 175
300 (1.6mm from case )
10 lbfin (1.1Nm)
°C
Absolute Maximum Ratings
Parameter
Typ.
–––
–––
–––
Max.
1.4
50
110
Units
R
θ
JC
R
θ
JA
R
θ
JA
Junction-to-Case
Junction-to-Ambient (PCB mount)*
Junction-to-Ambient**
°C/W
Thermal Resistance
V
DSS
= -55V
R
DS(on)
= 0.065
I
D
= -31A
l
Ultra Low On-Resistance
l
Surface Mount (IRFR5305)
l
Straight Lead (IRFU5305)
l
Advanced Process Technology
l
Fast Switching
l
Fully Avalanche Rated
Description
10/23/00
S
D
G
D-Pak I-Pak
IRFR5305 IRFU5305
PD - 91402A
相關(guān)PDF資料 |
PDF描述 |
|---|---|
| IRFRU5305 | Power MOSFET(Vdss=-55V, Rds(on)=0.065ohm, Id=-31A) |
| IRFU5305 | Power MOSFET(Vdss=-55V, Rds(on)=0.065ohm, Id=-31A) |
| IRFR5410 | Power MOSFET(Vdss=-100V, Rds(on)=0.205ohm, Id=-13A) |
| IRFRU5410 | Power MOSFET(Vdss=-100V, Rds(on)=0.205ohm, Id=-13A) |
| IRFU5410 | Power MOSFET(Vdss=-100V, Rds(on)=0.205ohm, Id=-13A) |
相關(guān)代理商/技術(shù)參數(shù) |
參數(shù)描述 |
|---|---|
| IRFR5305CPBF | 功能描述:MOSFET P-CH 55V 31A DPAK RoHS:是 類別:分離式半導(dǎo)體產(chǎn)品 >> FET - 單 系列:HEXFET® 標(biāo)準(zhǔn)包裝:1,000 系列:MESH OVERLAY™ FET 型:MOSFET N 通道，金屬氧化物 FET 特點(diǎn):邏輯電平門 漏極至源極電壓(Vdss):200V 電流 - 連續(xù)漏極(Id) @ 25° C:18A 開態(tài)Rds（最大）@ Id, Vgs @ 25° C:180 毫歐 @ 9A，10V Id 時的 Vgs(th)（最大）:4V @ 250µA 閘電荷(Qg) @ Vgs:72nC @ 10V 輸入電容 (Ciss) @ Vds:1560pF @ 25V 功率 - 最大:40W 安裝類型:通孔 封裝/外殼:TO-220-3 整包 供應(yīng)商設(shè)備封裝:TO-220FP 包裝:管件 |
| IRFR5305HR | 制造商:IR 功能描述:HIREL part for Textron |
| IRFR5305PBF | 功能描述:MOSFET 1 P-CH -55V HEXFET 65mOhms 42nC RoHS:否 制造商:STMicroelectronics 晶體管極性:N-Channel 汲極/源極擊穿電壓:650 V 閘/源擊穿電壓:25 V 漏極連續(xù)電流:130 A 電阻汲極/源極 RDS（導(dǎo)通）:0.014 Ohms 配置:Single 最大工作溫度: 安裝風(fēng)格:Through Hole 封裝 / 箱體:Max247 封裝:Tube |
| IRFR5305TRL | 功能描述:MOSFET P-CH 55V 31A DPAK RoHS:否 類別:分離式半導(dǎo)體產(chǎn)品 >> FET - 單 系列:HEXFET® 標(biāo)準(zhǔn)包裝:1,000 系列:MESH OVERLAY™ FET 型:MOSFET N 通道，金屬氧化物 FET 特點(diǎn):邏輯電平門 漏極至源極電壓(Vdss):200V 電流 - 連續(xù)漏極(Id) @ 25° C:18A 開態(tài)Rds（最大）@ Id, Vgs @ 25° C:180 毫歐 @ 9A，10V Id 時的 Vgs(th)（最大）:4V @ 250µA 閘電荷(Qg) @ Vgs:72nC @ 10V 輸入電容 (Ciss) @ Vds:1560pF @ 25V 功率 - 最大:40W 安裝類型:通孔 封裝/外殼:TO-220-3 整包 供應(yīng)商設(shè)備封裝:TO-220FP 包裝:管件 |
| IRFR5305TRLPBF | 功能描述:MOSFET MOSFT PCh -55V -28A 65mOhm 42nC RoHS:否 制造商:STMicroelectronics 晶體管極性:N-Channel 汲極/源極擊穿電壓:650 V 閘/源擊穿電壓:25 V 漏極連續(xù)電流:130 A 電阻汲極/源極 RDS（導(dǎo)通）:0.014 Ohms 配置:Single 最大工作溫度: 安裝風(fēng)格:Through Hole 封裝 / 箱體:Max247 封裝:Tube |
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