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參數(shù)資料
| 型號(hào)： | IRFRU5305 |
| 廠商： | International Rectifier |
| 英文描述： | Power MOSFET(Vdss=-55V, Rds(on)=0.065ohm, Id=-31A) |
| 中文描述： | 功率MOSFET（減振鋼板基本\u003d- 55V的，的Rds（on）\u003d 0.065ohm，身份證\u003d- 31A條） |
| 文件頁數(shù)： | 1/10頁 |
| 文件大小： | 156K |
| 代理商： | IRFRU5305 |
IRFR/U5305
HEXFET
Power MOSFET
Fifth Generation HEXFETs from International Rectifier utilize
advanced processing techniques to achieve extremely low
on-resistance per silicon area. This benefit, combined with
the fast switching speed and ruggedized device design that
HEXFET
Power MOSFETs are well known for, provides
the designer with an extremely efficient and reliable device
for use in a wide variety of applications.
The D-Pak is designed for surface mounting using vapor
phase, infrared, or wave soldering techniques. The straight
lead version (IRFU series) is for through-hole mounting
applications. Power dissipation levels up to 1.5 watts are
possible in typical surface mount applications.
Parameter
Max.
-31
-22
-110
110
0.71
± 20
280
-16
11
-5.0
Units
I
D
@ T
C
= 25°C
I
D
@ T
C
= 100°C
I
DM
P
D
@T
C
= 25°C
Continuous Drain Current, V
GS
@ -10V
Continuous Drain Current, V
GS
@ -10V
Pulsed Drain Current
Power Dissipation
Linear Derating Factor
Gate-to-Source Voltage
Single Pulse Avalanche Energy
Avalanche Current
Repetitive Avalanche Energy
Peak Diode Recovery dv/dt
Operating Junction and
Storage Temperature Range
Soldering Temperature, for 10 seconds
Mounting torque, 6-32 or M3 srew
A
W
W/°C
V
mJ
A
mJ
V/ns
V
GS
E
AS
I
AR
E
AR
dv/dt
T
J
T
STG
-55 to + 175
300 (1.6mm from case )
10 lbfin (1.1Nm)
°C
Absolute Maximum Ratings
Parameter
Typ.
–––
–––
–––
Max.
1.4
50
110
Units
R
θ
JC
R
θ
JA
R
θ
JA
Junction-to-Case
Junction-to-Ambient (PCB mount)*
Junction-to-Ambient**
°C/W
Thermal Resistance
V
DSS
= -55V
R
DS(on)
= 0.065
I
D
= -31A
l
Ultra Low On-Resistance
l
Surface Mount (IRFR5305)
l
Straight Lead (IRFU5305)
l
Advanced Process Technology
l
Fast Switching
l
Fully Avalanche Rated
Description
10/23/00
S
D
G
D-Pak I-Pak
IRFR5305 IRFU5305
PD - 91402A
相關(guān)PDF資料 |
PDF描述 |
|---|---|
| IRFU5305 | Power MOSFET(Vdss=-55V, Rds(on)=0.065ohm, Id=-31A) |
| IRFR5410 | Power MOSFET(Vdss=-100V, Rds(on)=0.205ohm, Id=-13A) |
| IRFRU5410 | Power MOSFET(Vdss=-100V, Rds(on)=0.205ohm, Id=-13A) |
| IRFU5410 | Power MOSFET(Vdss=-100V, Rds(on)=0.205ohm, Id=-13A) |
| IRFR9020 | REPETITIVE AVALANCHE AND dv/dt RATED HEXFET TRANSISTORS |
相關(guān)代理商/技術(shù)參數(shù) |
參數(shù)描述 |
|---|---|
| IRFRU5410 | 制造商:IRF 制造商全稱:International Rectifier 功能描述:Power MOSFET(Vdss=-100V, Rds(on)=0.205ohm, Id=-13A) |
| IRFRU5505 | 制造商:IRF 制造商全稱:International Rectifier 功能描述:Power MOSFET(Vdss=-55V, Rds(on)=0.11ohm, Id=-18A) |
| IRFRU6215 | 制造商:IRF 制造商全稱:International Rectifier 功能描述:Power MOSFET(Vdss=-150V, Rds(on)=0.295ohm, Id=-13A) |
| IRFRU9024N | 制造商:IRF 制造商全稱:International Rectifier 功能描述:Power MOSFET(Vdss=-55V, Rds(on)=0.175ohm, Id=-11A) |
| IRFRU9120N | 制造商:IRF 制造商全稱:International Rectifier 功能描述:Power MOSFET(Vdss=-100V, Rds(on)=0.48ohm, Id=-6.6A) |
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