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參數資料
| 型號： | IRFRU3707PBF |
| 廠商： | International Rectifier |
| 英文描述： | HEXFET㈢ Power MOSFET |
| 中文描述： | ㈢的HEXFET功率MOSFET |
| 文件頁數： | 1/9頁 |
| 文件大?。?/td> | 231K |
| 代理商： | IRFRU3707PBF |
www.irf.com
1
SMPS MOSFET
HEXFET Power MOSFET
R
DS(on)
max
13m
Benefits
Ultra-Low R
DS(on)
Very Low Gate Impedance
Fully Characterized Avalanche Voltage
and Current
V
DSS
30V
I
D
61A
Absolute Maximum Ratings
Symbol
V
DS
V
GS
Gate-to-Source Voltage
I
D
@ T
C
= 25°C
Continuous Drain Current, V
GS
@ 10V
I
D
@ T
C
= 70°C
Continuous Drain Current, V
GS
@ 10V
I
DM
Pulsed Drain Current
P
D
@T
C
= 25°C
Maximum Power Dissipation
P
D
@T
C
= 70°C
Maximum Power Dissipation
Linear Derating Factor 0.59 mW/°C
T
J
, T
STG
Junction and Storage Temperature Range
Parameter
Max.
30
Units
V
Drain-Source Voltage
± 20 V
61
51
244
87
61
A
W
W
-55 to + 175
°C
Parameter
Typ.
–––
–––
–––
Max.
1.73
50
110
Units
R
θ
JC
R
θ
JA
R
θ
JA
Junction-to-Case
Junction-to-Ambient (PCB mount)*
Junction-to-Ambient
°C/W
Thermal Resistance
When mounted on 1" square PCB (FR-4 or G-10 Material) .
For recommended footprint and soldering techniques refer to application note #AN-994
D-Pak
IRFR3707 IRFU3707
I-Pak
Notes
through are on page 9
High Frequency DC-DC Isolated
Converters with Synchronous Rectification
for Telecom and Industrial use
High Frequency Buck Converters for
Computer Processor Power
Lead-Free
Applications
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| IRFU3709ZCPbF | HEXFET Power MOSFET |
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相關代理商/技術參數 |
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|---|---|
| IRFRU3910 | 制造商:IRF 制造商全稱:International Rectifier 功能描述:Power MOSFET(Vdss=100V, Rds=0.115ohm, Id=16A) |
| IRFRU4105 | 制造商:IRF 制造商全稱:International Rectifier 功能描述:Power MOSFET(Vdss=55V, Rds(on)=0.045ohm, Id=27A) |
| IRFRU5305 | 制造商:IRF 制造商全稱:International Rectifier 功能描述:Power MOSFET(Vdss=-55V, Rds(on)=0.065ohm, Id=-31A) |
| IRFRU5410 | 制造商:IRF 制造商全稱:International Rectifier 功能描述:Power MOSFET(Vdss=-100V, Rds(on)=0.205ohm, Id=-13A) |
| IRFRU5505 | 制造商:IRF 制造商全稱:International Rectifier 功能描述:Power MOSFET(Vdss=-55V, Rds(on)=0.11ohm, Id=-18A) |
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