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參數資料
| 型號： | IRFS11N50ATRR |
| 英文描述： | TRANSISTOR | MOSFET | N-CHANNEL | 11A I(D) | TO-263AB |
| 中文描述： | 晶體管| MOSFET的| N溝道|第11A條（?。﹟對263AB |
| 文件頁數： | 1/9頁 |
| 文件大小： | 151K |
| 代理商： | IRFS11N50ATRR |
Parameter
Max.
11
7.0
44
170
1.3
± 30
6.9
Units
I
D
@ T
C
= 25°C
I
D
@ T
C
= 100°C
I
DM
P
D
@T
C
= 25°C
Continuous Drain Current, V
GS
@ 10V
Continuous Drain Current, V
GS
@ 10V
Pulsed Drain Current
Power Dissipation
Linear Derating Factor
Gate-to-Source Voltage
Peak Diode Recovery dv/dt
Operating Junction and
Storage Temperature Range
Soldering Temperature, for 10 seconds
A
W
W/°C
V
V/ns
V
GS
dv/dt
T
J
T
STG
-55 to + 150
300 (1.6mm from case )
°C
9/13/99
PD- 93797
SMPS MOSFET
HEXFET
Power MOSFET
l
Switch Mode Power Supply ( SMPS )
l
Uninterruptable Power Supply
l
High speed power switching
Benefits
l
Low Gate Charge Qg results in Simple
Drive Requirement
l
Improved Gate, Avalanche and dynamic
dv/dt Ruggedness
l
Fully Characterized Capacitance and
Avalanche Voltage and Current
l
Effective Coss Specified ( See AN 1001)
Applications
V
DSS
500V
Rds(on) max
0.52
I
D
11A
Applicable Off Line SMPS Topologies:
l
Two Transistor Forward
l
Half & Full Bridge
l
Power Factor Correction Boost
IRFS11N50A
www.irf.com
1
Notes
through
are on page 8
Absolute Maximum Ratings
D Pak
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相關代理商/技術參數 |
參數描述 |
|---|---|
| IRFS11N50ATRRP | 功能描述:MOSFET N-Chan 500V 11 Amp RoHS:否 制造商:STMicroelectronics 晶體管極性:N-Channel 汲極/源極擊穿電壓:650 V 閘/源擊穿電壓:25 V 漏極連續電流:130 A 電阻汲極/源極 RDS（導通）:0.014 Ohms 配置:Single 最大工作溫度: 安裝風格:Through Hole 封裝 / 箱體:Max247 封裝:Tube |
| IRFS11N50ATRRPBF | 制造商:VISHAY 制造商全稱:Vishay Siliconix 功能描述:Power MOSFET |
| IRFS140 | 制造商:未知廠家 制造商全稱:未知廠家 功能描述:TRANSISTOR | MOSFET | N-CHANNEL | 100V V(BR)DSS | 19.4A I(D) | SOT-186VAR |
| IRFS140A | 功能描述:MOSFET RoHS:否 制造商:STMicroelectronics 晶體管極性:N-Channel 汲極/源極擊穿電壓:650 V 閘/源擊穿電壓:25 V 漏極連續電流:130 A 電阻汲極/源極 RDS（導通）:0.014 Ohms 配置:Single 最大工作溫度: 安裝風格:Through Hole 封裝 / 箱體:Max247 封裝:Tube |
| IRFS141 | 制造商:未知廠家 制造商全稱:未知廠家 功能描述:TRANSISTOR | MOSFET | N-CHANNEL | 60V V(BR)DSS | 19.4A I(D) | SOT-186VAR |
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