- 您現(xiàn)在的位置：買賣IC網(wǎng) > PDF目錄360941 > IRFS30N20DTRR TRANSISTOR | MOSFET | N-CHANNEL | 200V V(BR)DSS | 30A I(D) | TO-263AB PDF資料下載
參數(shù)資料
| 型號： | IRFS30N20DTRR |
| 英文描述： | TRANSISTOR | MOSFET | N-CHANNEL | 200V V(BR)DSS | 30A I(D) | TO-263AB |
| 中文描述： | 晶體管| MOSFET的| N溝道| 200伏五（巴西）直| 30A條（丁）|對263AB |
| 文件頁數(shù)： | 11/11頁 |
| 文件大小： | 175K |
| 代理商： | IRFS30N20DTRR |
IRFB/IRFS/IRFL30N20D
www.irf.com
11
Repetitive rating; pulse width limited by
max. junction temperature.
Starting T
J
= 25°C, L = 3.8mH
R
G
= 25
, I
AS
= 18A.
I
SD
≤
18A, di/dt
≤
110A/μs, V
DD
≤
V
(BR)DSS
,
T
J
≤
175°C
This is applied to D
2
Pak, when mounted on 1" square PCB ( FR-4 or G-10 Material ).
For recommended footprint and soldering techniques refer to application note #AN-994.
Notes:
Pulse width
≤
300μs; duty cycle
≤
2%.
C
oss
eff. is a fixed capacitance that gives the same charging time
as C
oss
while V
DS
is rising from 0 to 80% V
DSS
This is only applied to TO-220AB package
WORLD HEADQUARTERS:
233 Kansas St., El Segundo, California 90245, Tel: (310) 252-7105
IR GREAT BRITAIN:
Hurst Green, Oxted, Surrey RH8 9BB, UK Tel: ++ 44 1883 732020
IR CANADA:
15 Lincoln Court, Brampton, Ontario L6T3Z2, Tel: (905) 453 2200
IR GERMANY:
Saalburgstrasse 157, 61350 Bad Homburg Tel: ++ 49 6172 96590
IR ITALY:
Via Liguria 49, 10071 Borgaro, Torino Tel: ++ 39 11 451 0111
IR JAPAN:
K&H Bldg., 2F, 30-4 Nishi-Ikebukuro 3-Chome, Toshima-Ku, Tokyo Japan 171 Tel: 81 3 3983 0086
IR SOUTHEAST ASIA:
1 Kim Seng Promenade, Great World City West Tower, 13-11, Singapore 237994 Tel: ++ 65 838 4630
IR TAIWAN:
16 Fl. Suite D. 207, Sec. 2, Tun Haw South Road, Taipei, 10673, Taiwan Tel: 886-2-2377-9936
Data and specifications subject to change without notice. 1/2000
D
2
Pak Tape & Reel Information
3
4
4
TRR
FEED DIRECTION
1.85 (.073)
1.65 (.065)
1.60 (.063)
1.50 (.059)
4.10 (.161)
3.90 (.153)
TRL
FEED DIRECTION
10.90 (.429)
10.70 (.421)
16.10 (.634)
15.90 (.626)
1.75 (.069)
1.25 (.049)
11.60 (.457)
11.40 (.449)
15.42 (.609)
15.22 (.601)
4.72 (.136)
4.52 (.178)
24.30 (.957)
23.90 (.941)
0.368 (.0145)
0.342 (.0135)
1.60 (.063)
1.50 (.059)
13.50 (.532)
12.80 (.504)
330.00
(14.173)
MAX.
27.40 (1.079)
23.90 (.941)
60.00 (2.362)
MIN.
30.40 (1.197)
26.40 (1.039)
24.40 (.961)
NOTES :
1. COMFORMS TO EIA-418.
2. CONTROLLING DIMENSION: MILLIMETER.
4. INCLUDES FLANGE DISTORTION @ OUTER EDGE.
Powered by ICminer.com Electronic-Library Service CopyRight 2003
相關PDF資料 |
PDF描述 |
|---|---|
| IRFL5505 | TRANSISTOR | MOSFET | P-CHANNEL | 55V V(BR)DSS | 3.4A I(D) | SOT-223 |
| IRFM010 | TRANSISTOR | MOSFET | N-CHANNEL | 50V V(BR)DSS | 2.7A I(D) | SOT-223 |
| IRFM014 | TRANSISTOR | MOSFET | N-CHANNEL | 60V V(BR)DSS | 2.7A I(D) | SOT-223 |
| IRFM014A | TRANSISTOR | MOSFET | N-CHANNEL | 60V V(BR)DSS | 2.8A I(D) | SOT-223 |
| IRFM040 | TRANSISTOR | MOSFET | N-CHANNEL | 50V V(BR)DSS | 25A I(D) | TO-254AA |
相關代理商/技術參數(shù) |
參數(shù)描述 |
|---|---|
| IRFS3107-7PPBF | 功能描述:MOSFET 75V 1 N-CH HEXFET 2.6mOhms 160nC RoHS:否 制造商:STMicroelectronics 晶體管極性:N-Channel 汲極/源極擊穿電壓:650 V 閘/源擊穿電壓:25 V 漏極連續(xù)電流:130 A 電阻汲極/源極 RDS（導通）:0.014 Ohms 配置:Single 最大工作溫度: 安裝風格:Through Hole 封裝 / 箱體:Max247 封裝:Tube |
| IRFS3107PBF | 功能描述:MOSFET 75V 1 N-CH HEXFET 3mOhms 160nC RoHS:否 制造商:STMicroelectronics 晶體管極性:N-Channel 汲極/源極擊穿電壓:650 V 閘/源擊穿電壓:25 V 漏極連續(xù)電流:130 A 電阻汲極/源極 RDS（導通）:0.014 Ohms 配置:Single 最大工作溫度: 安裝風格:Through Hole 封裝 / 箱體:Max247 封裝:Tube |
| IRFS3107TRL7PP | 功能描述:MOSFET MOSFT 75V 260A 2.6mOhm 160nC RoHS:否 制造商:STMicroelectronics 晶體管極性:N-Channel 汲極/源極擊穿電壓:650 V 閘/源擊穿電壓:25 V 漏極連續(xù)電流:130 A 電阻汲極/源極 RDS（導通）:0.014 Ohms 配置:Single 最大工作溫度: 安裝風格:Through Hole 封裝 / 箱體:Max247 封裝:Tube |
| IRFS3107TRLPBF | 功能描述:MOSFET MOSFT 75V 230A 3mOhm 160nC Qg RoHS:否 制造商:STMicroelectronics 晶體管極性:N-Channel 汲極/源極擊穿電壓:650 V 閘/源擊穿電壓:25 V 漏極連續(xù)電流:130 A 電阻汲極/源極 RDS（導通）:0.014 Ohms 配置:Single 最大工作溫度: 安裝風格:Through Hole 封裝 / 箱體:Max247 封裝:Tube |
| IRFS31N20D | 制造商:International Rectifier 功能描述:MOSFET N D2-PAK |
發(fā)布緊急采購，3分鐘左右您將得到回復。