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參數資料
| 型號： | IRFS4310ZPBF |
| 廠商： | International Rectifier |
| 英文描述： | HEXFET Power MOSFET |
| 中文描述： | HEXFET功率MOSFET |
| 文件頁數： | 1/11頁 |
| 文件大小： | 437K |
| 代理商： | IRFS4310ZPBF |
4/27/07
www.irf.com
1
HEXFET Power MOSFET
Benefits
Improved Gate, Avalanche and Dynamic dV/dt
Ruggedness
Fully Characterized Capacitance and Avalanche
SOA
Enhanced body diode dV/dt and dI/dt Capability
Lead-Free
Applications
High Efficiency Synchronous Rectification in SMPS
Uninterruptible Power Supply
High Speed Power Switching
Hard Switched and High Frequency Circuits
IRFB4310ZPbF
IRFS4310ZPbF
IRFSL4310ZPbF
D
2
Pak
IRFS4310ZPbF
TO-220AB
IRFB4310ZPbF
TO-262
IRFSL4310ZPbF
S
D
G
S
D
G
S
D
G
D
D
D
G
D
S
Gate
Drain
Source
S
D
G
V
DSS
R
DS(on)
typ.
max.
I
D
(Silicon Limited)
I
D
(Package Limited)
100V
4.8m
6.0m
127A
75A
Absolute Maximum Ratings
Symbol
I
D
@ T
C
= 25°C
I
D
@ T
C
= 100°C
I
D
@ T
C
= 25°C
I
DM
P
D
@T
C
= 25°C
Parameter
Units
A
Continuous Drain Current, V
GS
@ 10V (Silicon Limited)
Continuous Drain Current, V
GS
@ 10V (Silicon Limited)
Continuous Drain Current, V
GS
@ 10V (Package Limited)
Pulsed Drain Current
Maximum Power Dissipation
Linear Derating Factor
Gate-to-Source Voltage
Peak Diode Recovery
Operating Junction and
Storage Temperature Range
Soldering Temperature, for 10 seconds
(1.6mm from case)
Mounting torque, 6-32 or M3 screw
Avalanche Characteristics
E
AS (Thermally limited)
Single Pulse Avalanche Energy
I
AR
Avalanche Current
E
AR
Repetitive Avalanche Energy
Thermal Resistance
Symbol
Parameter
R
θ
JC
Junction-to-Case
R
θ
CS
Case-to-Sink, Flat Greased Surface , TO-220
R
θ
JA
Junction-to-Ambient, TO-220
R
θ
JA
Junction-to-Ambient (PCB Mount) , D
2
Pak
W
W/°C
V
V
GS
dv/dt
T
J
T
STG
V/ns
°C
mJ
A
mJ
Typ.
–––
0.50
–––
–––
Max.
0.6
–––
62
40
Units
°C/W
130
See Fig. 14, 15, 22a, 22b,
250
1.7
18
-55 to + 175
± 20
10lb in (1.1N m)
300
Max.
127
90
75
560
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相關代理商/技術參數 |
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| IRFS4310ZTRLPBF | 功能描述:MOSFET MOSFT 100V 127A 6mOhm 120nC Qg RoHS:否 制造商:STMicroelectronics 晶體管極性:N-Channel 汲極/源極擊穿電壓:650 V 閘/源擊穿電壓:25 V 漏極連續電流:130 A 電阻汲極/源極 RDS（導通）:0.014 Ohms 配置:Single 最大工作溫度: 安裝風格:Through Hole 封裝 / 箱體:Max247 封裝:Tube |
| IRFS4321PBF | 功能描述:MOSFET 150V 1 N-CH HEXFET 15mOhms 71nC RoHS:否 制造商:STMicroelectronics 晶體管極性:N-Channel 汲極/源極擊穿電壓:650 V 閘/源擊穿電壓:25 V 漏極連續電流:130 A 電阻汲極/源極 RDS（導通）:0.014 Ohms 配置:Single 最大工作溫度: 安裝風格:Through Hole 封裝 / 箱體:Max247 封裝:Tube |
| IRFS4321TRL7PP | 制造商:International Rectifier 功能描述:MOSFET, 150V, 85A, 15 MOHM, 71 NC QG, D2PAK-7 - Tape and Reel 制造商:International Rectifier 功能描述:MOSFET N-CH 150V 86A D2PAK 制造商:International Rectifier 功能描述:T&R / MOSFET, 150V, 85A, 15 mOhm, 71 nC Qg, D2PAK-7 |
| IRFS4321TRLPBF | 功能描述:MOSFET MOSFT 100V 96A 10mOhm 120nC Qg RoHS:否 制造商:STMicroelectronics 晶體管極性:N-Channel 汲極/源極擊穿電壓:650 V 閘/源擊穿電壓:25 V 漏極連續電流:130 A 電阻汲極/源極 RDS（導通）:0.014 Ohms 配置:Single 最大工作溫度: 安裝風格:Through Hole 封裝 / 箱體:Max247 封裝:Tube |
| IRFS4321TRRPBF | 功能描述:MOSFET 150V 1 N-CH HEXFET 15mOhms 71nC RoHS:否 制造商:STMicroelectronics 晶體管極性:N-Channel 汲極/源極擊穿電壓:650 V 閘/源擊穿電壓:25 V 漏極連續電流:130 A 電阻汲極/源極 RDS（導通）:0.014 Ohms 配置:Single 最大工作溫度: 安裝風格:Through Hole 封裝 / 箱體:Max247 封裝:Tube |
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