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參數資料
| 型號： | IRFU322 |
| 英文描述： | TRANSISTOR | MOSFET | N-CHANNEL | 400V V(BR)DSS | 2.6A I(D) | TO-251AA |
| 中文描述： | 晶體管| MOSFET的| N溝道| 400V五（巴西）直| 2.6AI（四）|對251AA |
| 文件頁數： | 7/7頁 |
| 文件大小： | 117K |
| 代理商： | IRFU322 |
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相關代理商/技術參數 |
參數描述 |
|---|---|
| IRFU325 | 制造商:SUNTAC 制造商全稱:SUNTAC 功能描述:POWER MOSFET |
| IRFU330 | 制造商:IRF 制造商全稱:International Rectifier 功能描述:HEXFET Power MOSFET |
| IRFU3303 | 功能描述:MOSFET N-CH 30V 33A I-PAK RoHS:否 類別:分離式半導體產品 >> FET - 單 系列:HEXFET® 標準包裝:1,000 系列:MESH OVERLAY™ FET 型:MOSFET N 通道，金屬氧化物 FET 特點:邏輯電平門 漏極至源極電壓(Vdss):200V 電流 - 連續漏極(Id) @ 25° C:18A 開態Rds（最大）@ Id, Vgs @ 25° C:180 毫歐 @ 9A，10V Id 時的 Vgs(th)（最大）:4V @ 250µA 閘電荷(Qg) @ Vgs:72nC @ 10V 輸入電容 (Ciss) @ Vds:1560pF @ 25V 功率 - 最大:40W 安裝類型:通孔 封裝/外殼:TO-220-3 整包 供應商設備封裝:TO-220FP 包裝:管件 |
| IRFU3303PBF | 功能描述:MOSFET MOSFT 30V 33A 31mOhm 29nC RoHS:否 制造商:STMicroelectronics 晶體管極性:N-Channel 汲極/源極擊穿電壓:650 V 閘/源擊穿電壓:25 V 漏極連續電流:130 A 電阻汲極/源極 RDS（導通）:0.014 Ohms 配置:Single 最大工作溫度: 安裝風格:Through Hole 封裝 / 箱體:Max247 封裝:Tube |
| IRFU3303PBF | 制造商:International Rectifier 功能描述:MOSFET Transistor RoHS Compliant:Yes |
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