- 您現(xiàn)在的位置：買賣IC網(wǎng) > PDF目錄385445 > IRFZ44ZL (International Rectifier) Power MOSFET(Vdss=55V, Rds(on)=13.9mohm, Id=51A) PDF資料下載
參數(shù)資料
| 型號(hào)： | IRFZ44ZL |
| 廠商： | International Rectifier |
| 英文描述： | Power MOSFET(Vdss=55V, Rds(on)=13.9mohm, Id=51A) |
| 中文描述： | 功率MOSFET（減振鋼板基本\u003d 55V的，的Rds（on）\u003d 13.9mohm，身份證\u003d 51A條） |
| 文件頁(yè)數(shù)： | 1/12頁(yè) |
| 文件大小： | 333K |
| 代理商： | IRFZ44ZL |
www.irf.com
1
HEXFET
is a registered trademark of International Rectifier.
IRFZ44Z
IRFZ44ZS
IRFZ44ZL
HEXFET
Power MOSFET
S
D
G
V
DSS
= 55V
R
DS(on)
= 13.9m
I
D
= 51A
Features
Advanced Process Technology
Ultra Low On-Resistance
Dynamic dv/dt Rating
175°C Operating Temperature
Fast Switching
Repetitive Avalanche Allowed up to Tjmax
O
O
O
O
O
O
AUTOMOTIVE MOSFET
PD - 94797
Description
Specifically designed for Automotive applica-
tions, this HEXFET
Power MOSFET utilizes the
latest processing techniques to achieve extremely
low on-resistance per silicon area. Additional
features of this design are a 175°C junction
operating temperature, fast switching speed and
improved repetitive avalanche rating . These
features combine to make this design an ex-
tremely efficient and reliable device for use in
Automotive applications and a wide variety of
other applications.
D
2
Pak
IRFZ44ZS
TO-220AB
IRFZ44Z
TO-262
IRFZ44ZL
Absolute Maximum Ratings
Parameter
Units
A
I
D
@ T
C
= 25°C
I
D
@ T
C
= 100°C
I
DM
P
D
@T
C
= 25°C
Continuous Drain Current, V
GS
@ 10V (Silicon Limited)
Continuous Drain Current, V
GS
@ 10V (See Fig. 9)
Pulsed Drain Current
Maximum Power Dissipation
Linear Derating Factor
Gate-to-Source Voltage
Single Pulse Avalanche Energy (Thermally Limited)
Single Pulse Avalanche Energy Tested Value
Avalanche Current
Repetitive Avalanche Energy
Operating Junction and
Storage Temperature Range
Soldering Temperature, for 10 seconds
Mounting torque, 6-32 or M3 screw
Thermal Resistance
W
W/°C
V
mJ
V
GS
E
AS
E
AS
(tested)
I
AR
E
AR
T
J
T
STG
A
mJ
°C
Parameter
Typ.
–––
0.50
–––
–––
Max.
1.87
–––
62
40
Units
°C/W
R
θ
JC
R
θ
CS
R
θ
JA
R
θ
JA
Junction-to-Case
Case-to-Sink, Flat, Greased Surface
Junction-to-Ambient
Junction-to-Ambient (PCB Mount, steady state)
Max.
51
36
200
80
10 lbfin (1.1Nm)
0.53
± 20
86
105
See Fig.12a,12b,15,16
300 (1.6mm from case )
-55 to + 175
相關(guān)PDF資料 |
PDF描述 |
|---|---|
| IRFZ44ZS | Power MOSFET(Vdss=55V, Rds(on)=13.9mohm, Id=51A) |
| IRFZ46NLPbF | HEXFET Power MOSFET |
| IRFZ46NSPBF | HEXFET Power MOSFET |
| IRFZ48NL | 55V,64A,N-Channel HEXFET Power MOSFET(55V,64A,N溝道 HEXFET功率MOS場(chǎng)效應(yīng)管) |
| IRFZ48N | N-Channel HEXFET Power MOSFET(N溝道 HEXFET 功率MOS場(chǎng)效應(yīng)管) |
相關(guān)代理商/技術(shù)參數(shù) |
參數(shù)描述 |
|---|---|
| IRFZ44ZLPBF | 功能描述:MOSFET MOSFT 55V 51A 13.9mOhm 29nC RoHS:否 制造商:STMicroelectronics 晶體管極性:N-Channel 汲極/源極擊穿電壓:650 V 閘/源擊穿電壓:25 V 漏極連續(xù)電流:130 A 電阻汲極/源極 RDS（導(dǎo)通）:0.014 Ohms 配置:Single 最大工作溫度: 安裝風(fēng)格:Through Hole 封裝 / 箱體:Max247 封裝:Tube |
| IRFZ44ZPBF | 功能描述:MOSFET MOSFT 55V 51A 13.9mOhm 29nC Qg RoHS:否 制造商:STMicroelectronics 晶體管極性:N-Channel 汲極/源極擊穿電壓:650 V 閘/源擊穿電壓:25 V 漏極連續(xù)電流:130 A 電阻汲極/源極 RDS（導(dǎo)通）:0.014 Ohms 配置:Single 最大工作溫度: 安裝風(fēng)格:Through Hole 封裝 / 箱體:Max247 封裝:Tube |
| IRFZ44ZS | 功能描述:MOSFET N-CH 55V 51A D2PAK RoHS:否 類別:分離式半導(dǎo)體產(chǎn)品 >> FET - 單 系列:HEXFET® 標(biāo)準(zhǔn)包裝:1,000 系列:MESH OVERLAY™ FET 型:MOSFET N 通道，金屬氧化物 FET 特點(diǎn):邏輯電平門 漏極至源極電壓(Vdss):200V 電流 - 連續(xù)漏極(Id) @ 25° C:18A 開(kāi)態(tài)Rds（最大）@ Id, Vgs @ 25° C:180 毫歐 @ 9A，10V Id 時(shí)的 Vgs(th)（最大）:4V @ 250µA 閘電荷(Qg) @ Vgs:72nC @ 10V 輸入電容 (Ciss) @ Vds:1560pF @ 25V 功率 - 最大:40W 安裝類型:通孔 封裝/外殼:TO-220-3 整包 供應(yīng)商設(shè)備封裝:TO-220FP 包裝:管件 |
| IRFZ44ZSHR | 制造商:International Rectifier 功能描述:TRANS MOSFET N-CH 55V 51A 3PIN D2PAK - Bulk |
| IRFZ44ZSPBF | 功能描述:MOSFET MOSFT 55V 51A 13.9mOhm 29nC Qg RoHS:否 制造商:STMicroelectronics 晶體管極性:N-Channel 汲極/源極擊穿電壓:650 V 閘/源擊穿電壓:25 V 漏極連續(xù)電流:130 A 電阻汲極/源極 RDS（導(dǎo)通）:0.014 Ohms 配置:Single 最大工作溫度: 安裝風(fēng)格:Through Hole 封裝 / 箱體:Max247 封裝:Tube |
發(fā)布緊急采購(gòu)，3分鐘左右您將得到回復(fù)。