- 您現在的位置：買賣IC網 > PDF目錄377514 > IRFZ48RSPBF (International Rectifier) HEXFET POWER MOSFET ( VDSS = 60V , RDS(on) = 0.018ヘ , ID = 50A ) PDF資料下載
參數資料
| 型號： | IRFZ48RSPBF |
| 廠商： | International Rectifier |
| 英文描述： | HEXFET POWER MOSFET ( VDSS = 60V , RDS(on) = 0.018ヘ , ID = 50A ) |
| 中文描述： | HEXFET功率MOSFET（減振鋼板基本\u003d 60V的，的RDS（on）\u003d 0.018ヘ，身份證\u003d 50A條） |
| 文件頁數： | 1/10頁 |
| 文件大小： | 266K |
| 代理商： | IRFZ48RSPBF |
IRFZ48RSPbF
IRFZ48RLPbF
HEXFET
Power MOSFET
08/24/04
Parameter
Max.
50*
50*
290
190
1.3
± 20
100
4.5
Units
I
D
@ T
C
= 25°C
I
D
@ T
C
= 100°C
I
DM
P
D
@T
C
= 25°C
Continuous Drain Current, V
GS
@ 10V
Continuous Drain Current, V
GS
@ 10V
Pulsed Drain Current
Power Dissipation
Linear Derating Factor
Gate-to-Source Voltage
Single Pulse Avalanche Energy
Peak Diode Recovery dv/dt
Operating Junction and
Storage Temperature Range
Soldering Temperature, for 10 seconds
Mounting torque, 6-32 or M3 srew
A
W
W/°C
V
mJ
V/ns
V
GS
E
AS
dv/dt
T
J
T
STG
-55 to + 175
300 (1.6mm from case )
10 lbfin (1.1Nm)
°C
Absolute Maximum Ratings
Parameter
Typ.
–––
0.50
–––
Max.
0.8
–––
62
Units
R
θ
JC
R
θ
CS
R
θ
JA
www.irf.com
Junction-to-Case
Case-to-Sink, Flat, Greased Surface
Junction-to-Ambient
°C/W
Thermal Resistance
1
V
DSS
= 60V
R
DS(on)
= 0.018
I
D
= 50*A
S
D
G
Advanced HEXFET
Power MOSFETs from International Rectifier
utilize advanced processing techniques to achieve extremely low on-
resistance per silicon area. This benefit, combined with the fast
switching speed and ruggedized device design that HEXFET power
MOSFETs are well known for, provides the designer with an extremely
efficient and reliable device for use in a wide variety of applications.
The D
2
Pak is a surface mount power package capable of
accommodating die sizes up to HEX-4. It provides the highest power
capability and the lowest possible on-resistance in any existing
surface mount package. The D
2
Pak is suitable for high current
applications because of its low internal connection resistance and can
dissipate up to 2.0W in a typical surface mount application.
Advanced Process Technology
Dynamic dv/dt Rating
175°C Operating Temperature
Fast Switching
Fully Avalanche Rated
Drop in Replacement of the IRFZ48
for Linear/Audio Applications
Lead-Free
Description
D
2
Pak
IRFZ48RS
TO-262
IRFZ44RL
PD - 95761
相關PDF資料 |
PDF描述 |
|---|---|
| IRFZ48RLPBF | HEXFET POWER MOSFET ( VDSS = 60V , RDS(on) = 0.018ヘ , ID = 50A ) |
| IRFZ48ZLPBF | AUTOMOTIVE MOSFET |
| IRFZ48ZPBF | AUTOMOTIVE MOSFET |
| IRFZ48ZSPBF | AUTOMOTIVE MOSFET |
| IRG4BC10KDPBF | INSULATED GATE BIPOLAR TRANSISTOR WITH ULTRAFAST SOFT RECOVERY DIODE |
相關代理商/技術參數 |
參數描述 |
|---|---|
| IRFZ48S | 功能描述:MOSFET N-Chan 60V 50 Amp RoHS:否 制造商:STMicroelectronics 晶體管極性:N-Channel 汲極/源極擊穿電壓:650 V 閘/源擊穿電壓:25 V 漏極連續電流:130 A 電阻汲極/源極 RDS（導通）:0.014 Ohms 配置:Single 最大工作溫度: 安裝風格:Through Hole 封裝 / 箱體:Max247 封裝:Tube |
| IRFZ48S_11 | 制造商:VISHAY 制造商全稱:Vishay Siliconix 功能描述:Power MOSFET |
| IRFZ48SPBF | 制造商:Vishay Semiconductors 功能描述:MOSFET N-CHANNEL 60V - Tape and Reel |
| IRFZ48STRL | 功能描述:MOSFET N-Chan 60V 50 Amp RoHS:否 制造商:STMicroelectronics 晶體管極性:N-Channel 汲極/源極擊穿電壓:650 V 閘/源擊穿電壓:25 V 漏極連續電流:130 A 電阻汲極/源極 RDS（導通）:0.014 Ohms 配置:Single 最大工作溫度: 安裝風格:Through Hole 封裝 / 箱體:Max247 封裝:Tube |
| IRFZ48STRR | 功能描述:MOSFET N-CH 60V 50A D2PAK RoHS:否 類別:分離式半導體產品 >> FET - 單 系列:- 標準包裝:1,000 系列:MESH OVERLAY™ FET 型:MOSFET N 通道，金屬氧化物 FET 特點:邏輯電平門 漏極至源極電壓(Vdss):200V 電流 - 連續漏極(Id) @ 25° C:18A 開態Rds（最大）@ Id, Vgs @ 25° C:180 毫歐 @ 9A，10V Id 時的 Vgs(th)（最大）:4V @ 250µA 閘電荷(Qg) @ Vgs:72nC @ 10V 輸入電容 (Ciss) @ Vds:1560pF @ 25V 功率 - 最大:40W 安裝類型:通孔 封裝/外殼:TO-220-3 整包 供應商設備封裝:TO-220FP 包裝:管件 |
發布緊急采購，3分鐘左右您將得到回復。