欧美成人免费电影,国产欧美一区二区三区精品酒店,精品国产a毛片,色网在线免费观看

參數資料
型號: IRFZ48ZSPBF
廠商: International Rectifier
英文描述: AUTOMOTIVE MOSFET
中文描述: 汽車MOSFET的
文件頁數: 1/12頁
文件大小: 284K
代理商: IRFZ48ZSPBF
www.irf.com
1
HEXFET
is a registered trademark of International Rectifier.
IRFZ48ZPbF
IRFZ48ZSPbF
IRFZ48ZLPbF
HEXFET
Power MOSFET
S
D
G
V
DSS
= 55V
R
DS(on)
= 11m
I
D
= 61A
Features
Advanced Process Technology
Ultra Low On-Resistance
Dynamic dv/dt Rating
175°C Operating Temperature
Fast Switching
Repetitive Avalanche Allowed up to Tjmax
Lead-Free
Description
Specifically designed for Automotive applica-
tions, this HEXFET
Power MOSFET utilizes the
latest processing techniques to achieve extremely
low on-resistance per silicon area. Additional
features of this design are a 175°C junction
operating temperature, fast switching speed and
improved repetitive avalanche rating . These
features combine to make this design an ex-
tremely efficient and reliable device for use in
Automotive applications and a wide variety of
other applications.
Absolute Maximum Ratings
O
O
O
O
O
O
O
AUTOMOTIVE MOSFET
PD - 95574
D
2
Pak
IRFZ48ZS
TO-220AB
IRFZ48Z
TO-262
IRFZ48ZL
Parameter
Units
A
I
D
@ T
C
= 25°C
I
D
@ T
C
= 100°C
I
DM
P
D
@T
C
= 25°C
Continuous Drain Current, V
GS
@ 10V (Silicon Limited)
Continuous Drain Current, V
GS
@ 10V (See Fig. 9)
Pulsed Drain Current
Maximum Power Dissipation
Linear Derating Factor
Gate-to-Source Voltage
Single Pulse Avalanche Energy (Thermally Limited)
Single Pulse Avalanche Energy Tested Value
Avalanche Current
Repetitive Avalanche Energy
Operating Junction and
Storage Temperature Range
Soldering Temperature, for 10 seconds
Mounting torque, 6-32 or M3 screw
Thermal Resistance
W
W/°C
V
mJ
V
GS
E
AS
E
AS
(tested)
I
AR
E
AR
T
J
T
STG
A
mJ
°C
Parameter
Typ.
–––
0.50
–––
–––
Max.
1.64
–––
62
40
Units
°C/W
R
θ
JC
R
θ
CS
R
θ
JA
R
θ
JA
Junction-to-Case
Case-to-Sink, Flat, Greased Surface
Junction-to-Ambient
Junction-to-Ambient (PCB Mount, steady state)
Max.
61
43
240
91
10 lbfin (1.1Nm)
0.61
± 20
73
120
See Fig.12a,12b,15,16
300 (1.6mm from case )
-55 to + 175
相關PDF資料
PDF描述
IRG4BC10KDPBF INSULATED GATE BIPOLAR TRANSISTOR WITH ULTRAFAST SOFT RECOVERY DIODE
IRG4BC10SD-L 16 Characters x 2 Lines, 5x7 Dot Matrix Character and Cursor
IRG4BC10KD INSULATED GATE BIPOLAR TRANSISTOR WITH ULTRAFAST SOFT RECOVERY DIODE(Vces=600V, Vce(on)typ.2.39V, @Vge=15V, Ic=5.0A)
IRG4BC10UD INSULATED GATE BIPOLAR TRANSISTOR WITH ULTRAFAST SOFT RECOVERY DIODE(Vces=600V, Vce(on)typ.=2.15V, @Vge=15V, Ic=5.0A)
IRG4BC10SD-S 16 Characters x 2 Lines, 5x7 Dot Matrix Character and Cursor
相關代理商/技術參數
參數描述
IRG 4BC15UDPBF 制造商:International Rectifier 功能描述:Bulk
IRG 4PC40UDPBF 制造商:International Rectifier 功能描述:Bulk
IRG 4PC40WPBF 制造商:International Rectifier 功能描述:
IRG 4PC50FDPBF 制造商:International Rectifier 功能描述:Bulk
IRG 4PH50UDPBF 制造商:International Rectifier 功能描述:Bulk
主站蜘蛛池模板: 天祝| 古浪县| 轮台县| 河北省| 烟台市| 麟游县| 庄浪县| 德庆县| 石门县| 隆回县| 亳州市| 论坛| 色达县| 德庆县| 赞皇县| 会泽县| 合川市| 新巴尔虎右旗| 石屏县| 伊川县| 香格里拉县| 宜城市| 离岛区| 洪湖市| 富平县| 瓦房店市| 县级市| 安丘市| 永川市| 沅陵县| 西青区| 辽宁省| 门源| 馆陶县| 肃宁县| 北票市| 陈巴尔虎旗| 鲁甸县| 鄱阳县| 台北市| 西安市|