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參數(shù)資料
型號: IRG4BC10SD-STRL
英文描述: TRANSISTOR | IGBT | N-CHAN | 600V V(BR)CES | 14A I(C) | TO-263AB
中文描述: 晶體管| IGBT的|正陳| 600V的五(巴西)國際消費(fèi)電子展|第14A一(c)|至263AB
文件頁數(shù): 2/8頁
文件大小: 135K
代理商: IRG4BC10SD-STRL
IRG4BAC50S
2
www.irf.com
Parameter
Total Gate Charge (turn-on)
Gate - Emitter Charge (turn-on)
Gate - Collector Charge (turn-on)
Turn-On Delay Time
Rise Time
Turn-Off Delay Time
Fall Time
Turn-On Switching Loss
Turn-Off Switching Loss
Total Switching Loss
Turn-On Delay Time
Rise Time
Turn-Off Delay Time
Fall Time
Total Switching Loss
Internal Collector Inductance
Internal Emitter Inductance
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Min. Typ. Max. Units
180
24
61
33
30
650
400
0.72
8.27
8.99
31
31
1080
620
15
2.0
5.0
4100
250
48
Conditions
Q
g
Q
ge
Q
gc
t
d(on)
t
r
t
d(off)
t
f
E
on
E
off
E
ts
t
d(on)
t
r
t
d(off)
t
f
E
ts
L
C
L
E
C
ies
C
oes
C
res
Notes:
280
37
92
980
600
13
I
C
= 41A
V
CC
= 400V
V
GE
= 15V
nC
See Fig. 8
T
J
= 25°C
I
C
= 41A, V
CC
= 480V
V
GE
= 15V, R
G
= 5.0
Energy losses include "tail"
See Fig. 9, 10, 14
mJ
T
J
= 150°C,
I
C
= 41A, V
CC
= 480V
V
GE
= 15V, R
G
= 5.0
Energy losses include "tail"
See Fig. 11, 14
Measured 5mm from package
mJ
nH
V
GE
= 0V
V
CC
= 30V
= 1.0MHz
pF
See Fig. 7
Parameter
Collector-to-Emitter Breakdown Voltage
Emitter-to-Collector Breakdown Voltage
V
(BR)CES
/
T
J
Temperature Coeff. of Breakdown Voltage
Min. Typ. Max. Units
600
18
0.75
1.28
1.62
1.28
3.0
-9.3
17
34
Conditions
V
(BR)CES
V
(BR)ECS
1.36
6.0
250
2.0
1000
±100
V
V
V
GE
= 0V, I
C
= 250μA
V
GE
= 0V, I
C
= 1.0A
V
GE
= 0V, I
C
= 1.0mA
I
C
= 41A V
GE
= 15V
I
C
= 80A
I
C
= 41A , T
J
= 150°C
V
CE
= V
GE
, I
C
= 250μA
mV/°C V
CE
= V
GE
, I
C
= 250μA
S
V
CE
= 100V, I
C
= 41A
V
GE
= 0V, V
CE
= 600V
V
GE
= 0V, V
CE
= 10V, T
J
= 25°C
V
GE
= 0V, V
CE
= 600V, T
J
= 150°C
nA
V
GE
= ±20V
V/°C
V
CE(ON)
Collector-to-Emitter Saturation Voltage
See Fig.2, 5
V
GE(th)
V
GE(th)
/
T
J
g
fe
Gate Threshold Voltage
Temperature Coeff. of Threshold Voltage
Forward Transconductance
I
GES
Gate-to-Emitter Leakage Current
Electrical Characteristics @ T
J
= 25°C (unless otherwise specified)
I
CES
Zero Gate Voltage Collector Current
V
μA
Switching Characteristics @ T
J
= 25°C (unless otherwise specified)
ns
ns
Pulse width
80μs; duty factor
0.1%.
Pulse width 5.0μs, single shot.
Repetitive rating; V
GE
= 20V, pulse width limited by
max. junction temperature. (See Fig. 13b)
V
CC
= 80%(V
CES
), V
GE
= 20V, L = 10μH, R
G
= 5.0
,
(See Fig. 13a)
Repetitive rating; pulse width limited by maximum
junction temperature.
相關(guān)PDF資料
PDF描述
IRG4BC10SD-STRR TRANSISTOR | IGBT | N-CHAN | 600V V(BR)CES | 14A I(C) | TO-263AB
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相關(guān)代理商/技術(shù)參數(shù)
參數(shù)描述
IRG4BC10SD-STRR 制造商:未知廠家 制造商全稱:未知廠家 功能描述:TRANSISTOR | IGBT | N-CHAN | 600V V(BR)CES | 14A I(C) | TO-263AB
IRG4BC10SPBF 功能描述:IGBT 晶體管 600V DC-1 KHZ (STD) DISCRETE IGBT RoHS:否 制造商:Fairchild Semiconductor 配置: 集電極—發(fā)射極最大電壓 VCEO:650 V 集電極—射極飽和電壓:2.3 V 柵極/發(fā)射極最大電壓:20 V 在25 C的連續(xù)集電極電流:150 A 柵極—射極漏泄電流:400 nA 功率耗散:187 W 最大工作溫度: 封裝 / 箱體:TO-247 封裝:Tube
IRG4BC10UD 制造商:International Rectifier 功能描述:SEMICONDUCTOR ((NS))
IRG4BC10UDPBF 功能描述:IGBT 晶體管 600V UltraFast 8-60kHz RoHS:否 制造商:Fairchild Semiconductor 配置: 集電極—發(fā)射極最大電壓 VCEO:650 V 集電極—射極飽和電壓:2.3 V 柵極/發(fā)射極最大電壓:20 V 在25 C的連續(xù)集電極電流:150 A 柵極—射極漏泄電流:400 nA 功率耗散:187 W 最大工作溫度: 封裝 / 箱體:TO-247 封裝:Tube
IRG4BC10UDPBF 制造商:International Rectifier 功能描述:IGBT
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