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參數資料
| 型號： | IRG4BC15UD |
| 廠商： | International Rectifier |
| 英文描述： | INSULATED GATE BIPOLAR TRANSISTOR WITH ULTRAFAST SOFT RECOVERY DIODE(Vces=600V, Vce(on)typ.=2.02V, @Vge=15V, Ic=7.8A) |
| 中文描述： | 絕緣柵雙極型晶體管，超快軟恢復二極管（VCES和\u003d 600V電壓的Vce（on）典型.\u003d 2.02V，@和VGE \u003d 15V的，集成電路\u003d 7.8A） |
| 文件頁數： | 1/10頁 |
| 文件大小： | 256K |
| 代理商： | IRG4BC15UD |
IRG4BC15MD
Short Circuit Rated
INSULATED GATE BIPOLAR TRANSISTOR WITH
ULTRAFAST SOFT RECOVERY DIODE
Features
Rugged: 10μsec short circuit capable at VGS = 15V
Low VCE(on) for 4 to 10kHz applications
IGBT co-packaged with ultra-soft-recovery anti-parallel
diodes
Industry standard TO-220AB package
Benefits
Best Value for Appliance and Industrial applications
Offers highest efficiency and short circuit capability for
intermediate applications
Provides best efficiency for the mid range frequency
(4 to 10kHz)
Optimized for Appliance and Industrial applications up to
1HP
High noise immune "Positive Only" gate drive - Negative
bias gate drive not necessary
For Low EMI designs - requires little or no snubbing
Single Package switch for bridge circuit applications
Compatible with high voltage Gate Drive IC's
Allows simpler gate drive
E
G
n-channel
C
V
CES
= 600V
V
CE(on) typ.
= 1.88V
@V
GE
= 15V, I
C
= 8.6A
Parameter
Junction-to-Case - IGBT
Junction-to-Case - Diode
Case-to-Sink, flat, greased surface
Junction-to-Ambient, typical socket mount
Weight
Min.
–––
–––
–––
–––
–––
Typ.
–––
–––
0.50
–––
2 (0.07)
Max.
2.7
7.0
–––
80
–––
Units
R
θ
JC
R
θ
JC
R
θ
CS
R
θ
JA
Wt
www.irf.com
°C/W
g (oz)
Thermal Resistance
5/25/01
Absolute Maximum Ratings
Parameter
Collector-to-Emitter Voltage
Continuous Collector Current
Continuous Collector Current
Pulsed Collector Current
Clamped Inductive Load Current
Diode Continuous Forward Current
Short Circuit Withstand Time
Diode Maximum Forward Current
Gate-to-Emitter Voltage
Maximum Power Dissipation
Maximum Power Dissipation
Operating Junction and
Storage Temperature Range
Soldering Temperature, for 10 sec.
Mounting Torque, 6-32 or M3 Screw.
Max.
600
14
8.6
28
28
4.0
12
16
± 20
49
19
Units
V
V
CES
I
C
@ T
C
= 25°C
I
C
@ T
C
= 100°C
I
CM
I
LM
I
F
@ T
C
= 100°C
t
sc
I
FM
V
GE
P
D
@ T
C
= 25°C
P
D
@ T
C
= 100°C
T
J
T
STG
A
μs
A
V
-55 to +150
°C
300 (0.063 in. (1.6mm) from case)
10 lbfin (1.1 Nm)
PD- 94151A
W
TO-220AB
1
Fast IGBT
相關PDF資料 |
PDF描述 |
|---|---|
| IRG4BC15UD-L | INSULATED GATE BIPOLAR TRANSISTOR WITH ULTRAFAST SOFT RECOVERY DIODE(Vces=600V, Vce(on)typ.=2.02V, @Vge=15V, Ic=7.8A) |
| IRG4BC15UD-S | INSULATED GATE BIPOLAR TRANSISTOR WITH ULTRAFAST SOFT RECOVERY DIODE(Vces=600V, Vce(on)typ.=2.02V, @Vge=15V, Ic=7.8A) |
| IRG4BC15UD-LPBF | INSULATED GATE BIPOLAR TRANSISTOR WITH ULTRAFAST SOFT RECOVERY DIOD |
| IRG4BC15UD-SPBF | INSULATED GATE BIPOLAR TRANSISTOR WITH ULTRAFAST SOFT RECOVERY DIOD |
| IRG4BC15UDPBF | INSULATED GATE BIPOLAR TRANSISTOR WITH ULTRAFAST SOFT RECOVERY DIODE |
相關代理商/技術參數 |
參數描述 |
|---|---|
| IRG4BC15UD-L | 功能描述:DIODE IGBT 600V 14A TO-262 RoHS:否 類別:分離式半導體產品 >> IGBT - 單路 系列:- 標準包裝:30 系列:GenX3™ IGBT 類型:PT 電壓 - 集電極發射極擊穿（最大）:1200V Vge, Ic時的最大Vce（開）:3V @ 15V，100A 電流 - 集電極 (Ic)（最大）:200A 功率 - 最大:830W 輸入類型:標準 安裝類型:通孔 封裝/外殼:TO-247-3 供應商設備封裝:PLUS247?-3 包裝:管件 |
| IRG4BC15UD-LPBF | 功能描述:IGBT 晶體管 600V UltraFast 10-30kHz RoHS:否 制造商:Fairchild Semiconductor 配置: 集電極—發射極最大電壓 VCEO:650 V 集電極—射極飽和電壓:2.3 V 柵極/發射極最大電壓:20 V 在25 C的連續集電極電流:150 A 柵極—射極漏泄電流:400 nA 功率耗散:187 W 最大工作溫度: 封裝 / 箱體:TO-247 封裝:Tube |
| IRG4BC15UDPBF | 功能描述:IGBT 晶體管 600V UltraFast 8-60kHz RoHS:否 制造商:Fairchild Semiconductor 配置: 集電極—發射極最大電壓 VCEO:650 V 集電極—射極飽和電壓:2.3 V 柵極/發射極最大電壓:20 V 在25 C的連續集電極電流:150 A 柵極—射極漏泄電流:400 nA 功率耗散:187 W 最大工作溫度: 封裝 / 箱體:TO-247 封裝:Tube |
| IRG4BC15UD-S | 功能描述:DIODE IGBT 600V 14A D2PAK RoHS:否 類別:分離式半導體產品 >> IGBT - 單路 系列:- 標準包裝:30 系列:GenX3™ IGBT 類型:PT 電壓 - 集電極發射極擊穿（最大）:1200V Vge, Ic時的最大Vce（開）:3V @ 15V，100A 電流 - 集電極 (Ic)（最大）:200A 功率 - 最大:830W 輸入類型:標準 安裝類型:通孔 封裝/外殼:TO-247-3 供應商設備封裝:PLUS247?-3 包裝:管件 |
| IRG4BC15UD-SPBF | 功能描述:IGBT 晶體管 600V ULTRAFAST 10-30KHZ COPACK IGBT RoHS:否 制造商:Fairchild Semiconductor 配置: 集電極—發射極最大電壓 VCEO:650 V 集電極—射極飽和電壓:2.3 V 柵極/發射極最大電壓:20 V 在25 C的連續集電極電流:150 A 柵極—射極漏泄電流:400 nA 功率耗散:187 W 最大工作溫度: 封裝 / 箱體:TO-247 封裝:Tube |
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