- 您現在的位置：買賣IC網 > PDF目錄384500 > IRG4BC20FD-SPBF (International Rectifier) INSULATED GATE BIPOLAR TRANSISTOR WITH ULTRAFAST SOFT RECOVERY DIODE Fast CoPack IGBT PDF資料下載
參數資料
| 型號： | IRG4BC20FD-SPBF |
| 廠商： | International Rectifier |
| 英文描述： | INSULATED GATE BIPOLAR TRANSISTOR WITH ULTRAFAST SOFT RECOVERY DIODE Fast CoPack IGBT |
| 中文描述： | 絕緣柵雙極型晶體管，超快軟恢復二極管IGBT的快速CoPack |
| 文件頁數： | 1/12頁 |
| 文件大小： | 303K |
| 代理商： | IRG4BC20FD-SPBF |
IRG4BC20FD-SPbF
INSULATED GATE BIPOLAR TRANSISTOR WITH
ULTRAFAST SOFT RECOVERY DIODE
Features
Fast: Optimized for medium operating
frequencies ( 1-5 kHz in hard switching,
kHz in resonant mode).
Generation 4 IGBT design provides tighter
parameter distribution and higher efficiency than
Generation 3
IGBT co-packaged with HEXFRED
TM
ultrafast,
ultra-soft-recovery anti-parallel diodes for use
in bridge configurations
Industry standard D
2
Pak package
E
G
n-channel
C
V
CES
= 600V
V
CE(on) typ.
= 1.66V
@V
GE
= 15V, I
C
= 9.0A
Fast CoPack IGBT
Absolute Maximum Ratings
20
Generation 4 IGBTs offer highest efficiencies
available
IGBTs optimized for specific application conditions
HEXFRED diodes optimized for performance with
IGBTs . Minimized recovery characteristics require
less/no snubbing
Designed to be a "drop-in" replacement for equivalent
industry-standard Generation 3 IR IGBTs
D Pak
www.irf.com
1
Parameter
Collector-to-Emitter Voltage
Continuous Collector Current
Continuous Collector Current
Pulsed Collector Current
Clamped Inductive Load Current
Diode Continuous Forward Current
Diode Maximum Forward Current
Gate-to-Emitter Voltage
Maximum Power Dissipation
Maximum Power Dissipation
Operating Junction and
Storage Temperature Range
Max.
600
16
9.0
64
64
8.0
60
± 20
60
24
Units
V
V
CES
I
C
@ T
C
= 25°C
I
C
@ T
C
= 100°C
I
CM
I
LM
I
F
@ T
C
= 100°C
I
FM
V
GE
P
D
@ T
C
= 25°C
P
D
@ T
C
= 100°C
T
J
T
STG
A
V
-55 to +150
°C
Parameter
Junction-to-Case - IGBT
Junction-to-Case - Diode
Typ.
–––
–––
–––
1.44
Max.
2.1
3.5
80
–––
Units
R
θ
JC
R
θ
JC
R
θ
JA
Wt
°C/W
*
Weight
g (oz)
Thermal Resistance
* When mounted on 1" square PCB (FR-4 or G-10 Material ). For recommended footprint and soldering techniques
refer to application note #AN-994.
相關PDF資料 |
PDF描述 |
|---|---|
| IRG4BC20MD-SPBF | 400 W Transient Voltage Suppressor, SOD123W (SOD2 FlatPower), Reel Pack, SMD |
| IRG4BC30KDPBF | INSULATED GATE BIPOLAR TRANSISTOR WITH ULTRAFAST SOFT RECOVERY DIODE Short Circuit Rated UltraFast 1GBT |
| IRG4BC40W | INSULATED GATE BIPOLAR TRANSISTOR(Vces=600V, Vce(on)typ.=2.05V, @Vge=15V, Ic=20A) |
| IRG4BH20K-L | INSULATED GATE BIPOLAR TRANSISTOR |
| IRG4BH20K-S | INSULATED GATE BIPOLAR TRANSISTOR |
相關代理商/技術參數 |
參數描述 |
|---|---|
| IRG4BC20FD-STRL | 功能描述:IGBT FAST 600V 16A LEFT D2PAK RoHS:否 類別:分離式半導體產品 >> IGBT - 單路 系列:- 標準包裝:30 系列:GenX3™ IGBT 類型:PT 電壓 - 集電極發射極擊穿（最大）:1200V Vge, Ic時的最大Vce（開）:3V @ 15V，100A 電流 - 集電極 (Ic)（最大）:200A 功率 - 最大:830W 輸入類型:標準 安裝類型:通孔 封裝/外殼:TO-247-3 供應商設備封裝:PLUS247?-3 包裝:管件 |
| IRG4BC20FDSTRLP | 制造商:International Rectifier 功能描述:TRANS IGBT CHIP N-CH 600V 16A 3PIN D2PAK - Tape and Reel |
| IRG4BC20FD-STRR | 功能描述:IGBT FAST 600V 16A RIGHT D2PAK RoHS:否 類別:分離式半導體產品 >> IGBT - 單路 系列:- 標準包裝:30 系列:GenX3™ IGBT 類型:PT 電壓 - 集電極發射極擊穿（最大）:1200V Vge, Ic時的最大Vce（開）:3V @ 15V，100A 電流 - 集電極 (Ic)（最大）:200A 功率 - 最大:830W 輸入類型:標準 安裝類型:通孔 封裝/外殼:TO-247-3 供應商設備封裝:PLUS247?-3 包裝:管件 |
| IRG4BC20FDSTRRP | 制造商:International Rectifier 功能描述:TRANS IGBT CHIP N-CH 600V 16A 3PIN D2PAK - Tape and Reel |
| IRG4BC20FPBF | 功能描述:IGBT 晶體管 600V Fast 1-8kHz RoHS:否 制造商:Fairchild Semiconductor 配置: 集電極—發射極最大電壓 VCEO:650 V 集電極—射極飽和電壓:2.3 V 柵極/發射極最大電壓:20 V 在25 C的連續集電極電流:150 A 柵極—射極漏泄電流:400 nA 功率耗散:187 W 最大工作溫度: 封裝 / 箱體:TO-247 封裝:Tube |
發布緊急采購，3分鐘左右您將得到回復。